RBV1000 - RBV1010
PRV : 50 - 1000 Volts
Io : 10 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9
±
0.2
C3
30
±
0.3
4.9
±
0.2
∅
3.2
±
0.1
20
±
0.3
FEATURES :
*
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 V
DC
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
+
13.5
±
0.3
~ ~
11
±
0.2
1.0
±
0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.97 grams ( Approximaly )
10
7.5 7.5
±0.2 ±0.2 ±0.2
2.0
±
0.2
0.7
±
0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 5.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
SYMBOL
RBV
1000
50
35
50
RBV
1001
100
70
100
RBV
1002
200
140
200
RBV
1004
400
280
400
10
300
160
1.0
10
200
2.5
RBV
1006
600
420
600
RBV
1008
800
560
800
17.5
±
0.5
RBV
1010
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
µA
µA
°C/W
°C
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
Ta = 25
°C
Ta = 100
°C
- 40 to + 150
- 40 to + 150
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
Page 1 of 2
Rev. 03 : September 9, 2005
RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
12
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
10
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
250
8
200
T
J
= 50
°C
6
150
4
HEAT-SINK MOUNTING, Tc
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm)
Al.-FINNED PLATE
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
2
50
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60 100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
10
Pulse Width = 300
µs
1 % Duty Cycle
1.0
1.0
0.1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
12
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 03 : September 9, 2005
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
