MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H1317M1A
BLOCK DIAGRAM
2
3
RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 136- to
174-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>60W,
η
T
>45% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 67 x 18 x 9.9 mm
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (FIN)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H1317M1A is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H1317M1A-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA60H1317M1A
MITSUBISHI ELECTRIC
1/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M1A
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=136-174MHz,
Z
G
=Z
L
=50Ω
RATING
17
5.5
100
80
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
3f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
rd
CONDITIONS
MIN
136
60
45
TYP
MAX
174
UNIT
MHz
W
%
Harmonic
3 Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
-50
-50
3:1
1
No parasitic oscillation
More than –60dBc
No degradation or destroy
dBc
dBc
—
mA
—
—
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<70W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=60W (V
GG
control),
Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H1317M1A
MITSUBISHI ELECTRIC
2/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M1A
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
100
out
(W)
2
nd
, 3 HARMONICS versus FREQUENCY
100
80
70
60
TOTAL EFFICIENCY
η
T
(%)
90
-20
-25
-30
HARMONICS (dBc)
-35
-40
-45
-50
-55
-60
-65
-70
130
140
150
160
FREQUENCY f(MHz)
170
180
2
nd
3
rd
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
rd
90
INPUT VSWR
ρ
in
(-)
80
70
60
50
40
30
20
10
0
130
140
ρ
in
η
T
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
P
out
OUTPUT POWER P
50
40
30
20
10
170
0
180
150
160
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
14
DRAIN CURRENT I
DD
(A)
12
out
(dBm)
70
60
POWER GAIN Gp(dB)
50
Gp
P
out
14
DRAIN CURRENT
I
DD
(A)
12
10
8
6
I
DD
f=155MHz
V
DD
=12.5V
V
GG
=5V
60
POWER GAIN Gp(dB)
50
40
30
I
DD
Gp
P
out
10
8
6
OUTPUT POWER P
OUTPUT POWER P
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
20
10
0
-10
-5
0
5
f=136MHz
V
DD
=12.5V
V
GG
=5V
4
2
0
4
2
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
out
(dBm)
14
DRAIN CURRENT I
DD
(A)
12
P
out
Gp
60
POWER GAIN Gp(dB)
50
40
30
I
DD
10
8
6
f=174MHz
V
DD
=12.5V
V
GG
=5V
OUTPUT POWER P
20
10
0
-10
-5
0
5
10
4
2
0
15
20
INPUT POWER P
in
(dBm)
RA60H1317M1A
MITSUBISHI ELECTRIC
3/9
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M1A
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
20
out
(W)
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
I
DD
20
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
f=155MHz
P
IN
=50m W
V
GG
=5V
90
80
70
60
50
40
30
20
10
0
2
P
out
16
14
12
I
DD
DRAIN CURRENT I
DD
(A)
f=136MHz
P
IN
=50m W
V
GG
=5V
18
18
P
out
OUTPUT POWER P
10
8
6
4
2
0
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
100
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
f=174MHz
P
IN
=50m W
V
GG
=5V
20
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
90
80
70
60
50
40
30
20
10
0
2
P
out
OUTPUT POWER P
I
DD
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
RA60H1317M1A
MITSUBISHI ELECTRIC
4/9
OUTPUT POWER P
13 Mar 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H1317M1A
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
100
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
20
DRAIN CURRENT I
DD
(A)
out
(W)
100
90
80
70
60
50
40
30
20
10
0
3.5
4.0
4.5
5.0
5.5
GATE VOLTAGE V
GG
(V)
I
DD
f=155MHz
P
IN
=50m W
V
DD
=12.5V
20
18
P
out
90
80
70
60
50
40
30
20
10
0
3.5
P
out
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
I
DD
4.0
4.5
5.0
5.5
GATE VOLTAGE V
GG
(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
100
out
(W)
20
16
14
12
I
DD
90
80
70
60
50
40
30
20
10
0
3.5
P
out
OUTPUT POWER P
10
8
6
4
2
0
4.0
4.5
5.0
5.5
GATE VOLTAGE V
GG
(V)
RA60H1317M1A
MITSUBISHI ELECTRIC
5/9
DRAIN CURRENT I
DD
(A)
f=174MHz
P
IN
=50m W
V
DD
=12.5V
18
OUTPUT POWER P
13 Mar 2008
DRAIN CURRENT I
DD
(A)
f=136MHz
P
IN
=50m W
V
DD
=12.5V
18
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