MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA60H4452M1
BLOCK DIAGRAM
2
3
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the nominal output signal (P
out
=60W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
V
GG
is 4V (typical) and 5V (maximum).
At V
GG
=5V, the typical gate currents are 5mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>60W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current I
GG
=5mA (typ) @ V
GG
=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H4452M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H4452M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA60H4452M1
MITSUBISHI ELECTRIC
1/9
3 Mar2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4452M1
MAXIMUM RATINGS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V, P
in
=0W
V
DD
<12.5V, P
in
=50mW
f=440-520MHz,
V
GG
<5V
RATING
17
6
100
80
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
F
P
out
ηT
2f
o
ρ
in
I
GG
I
DD
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
V
DD
=0V, V
GG
=5V, P
in
=0W
V
DD
=17V, V
GG
=0V, P
in
=0W
V
DD
=10.0-15.2V, P
in
=25-70mW,
5<P
out
<65W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW,
P
out
=60W (V
GG
control), Load VSWR=20:1
MIN
440
60
40
TYP
MAX
520
UNIT
MHz
W
%
Harmonic
-35
3:1
5
6
1
No parasitic oscillation
No degradation or destroy
dBc
—
mA
mA
—
—
Input VSWR
Gate Current
Leakage Current
Stability
Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H4452M1
MITSUBISHI ELECTRIC
2/9
3 Mar2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4452M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O U T PU T PO WER , T O T AL EFFIC IEN C Y,
v e rsus FR EQ U EN C Y
90
OUTPUT POWER P
out
(W)
80
TOTAL EFFICIENCY(%)
70
60
50
40
30
20
10
η
T
P
out
2 ,3
-30
-40
-50
-60
-70
-80
nd
rd
H AR M O N IC S v e rsus FR EQ U EN C Y
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
HARMONICS (dBc)
3
rd
430 440 450 460 470 480 490 500 510 520 530
FRE Q UE NCY f(M Hz )
430 440 450 460 470 480 490 500 510 520 530
FRE QUE NCY f(M Hz )
IN PU T VSWR v e rsus FR EQ U EN C Y
5
GATE CURERENT (mA)
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
G AT E C U R R EN T v e rsus FR EQ U EN C Y
8
7
6
5
4
3
2
1
0
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
INPUT VSWR
ρ
in
(-)
4
Ι
GG
3
2
ρ
in
1
430 440 450 460 470 480 490 500 510 520 530
FRE Q UE NCY f(M Hz )
430 440 450 460 470 480 490 500 510 520 530
FRE Q UE NCY f(M Hz )
O UT PUT PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus INPUT PO WER
60
OUTPUT POWER P
out
(dBm)
50
40
30
20
10
0
-10
-5
0
5
10
Gp
P
out
O UT PU T PO WER, PO WER G AIN and
DRAIN CU RRENT v e rsus INPUT PO WER
24
OUTPUT POWER P
out
(dBm)
DRAIN CURRENT I
D
(A)
D
POWER GAIN Gp(dB)
20
16
12
8
60
50
Gp
P
out
24
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
D
(A)
D
20
16
12
8
f=470M Hz ,
V
DD
=12.5V ,
V
GG
=5V
POWER GAIN Gp(dB)
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=440M Hz ,
V
DD
=12.5V ,
V
GG
=5V
I
D D
4
0
20
4
0
20
15
15
INP UT POW E R P
in
(dB m )
INP UT P OW E R P
in
(dB m )
O UT PUT PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus INPUT PO WER
60
OUTPUT POWER P
out
(dBm)
50
Gp
P
out
O UT PU T PO WER, PO WER G AIN and
DRAIN CU RRENT v e rsus INPUT PO WER
24
OUTPUT POWER P
out
(dBm)
DRAIN CURRENT I
D
(A)
D
20
16
12
8
60
50
40
30
20
10
0
-10
-5
0
5
10
Gp
P
out
24
20
16
12
8
f=520M Hz ,
V
DD
=12.5V ,
V
GG
=5V
POWER GAIN Gp(dB)
40
30
20
10
0
-10
-5
0
5
10
POWER GAIN Gp(dB)
I
D D
f=490M Hz ,
V
DD
=12.5V ,
V
GG
=5V
I
D D
4
0
20
4
0
20
15
15
INP UT POW E R P
in
(dB m )
INP UT P OW E R P
in
(dB m )
RA60H4452M1
MITSUBISHI ELECTRIC
3/9
3 Mar2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4452M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
100
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
f=440M Hz ,
V
GG
=5V ,
P
in
=50m W
P
out
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
20
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
f=470M Hz ,
V
GG
=5V ,
P
in
=50m W
P
out
20
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
D
(A)
D
DRAIN CURRENT
DD
(A)
I
GATE CURRENT I
G
(mA)
G
DRAIN CURRENT
DD
(A)
I
GATE CURRENT I
G
(mA)
G
DRAIN CURRENT
DD
(A)
I
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
100
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
f=490M Hz ,
V
GG
=5V ,
P
in
=50m W
P
out
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
20
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
f=520M Hz ,
V
GG
=5V ,
P
in
=50m W
P
out
20
18
16
14
12
10
8
6
4
2
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
GG
(V )
I
GG
I
D D
f=440M Hz ,
V
DD
=12.5V ,
P
in
=50m W
P
out
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
18
16
OUTPUT POWER P
out
(W)
GATE CURRENT I
G
(mA)
G
14
12
10
8
6
4
2
0
DRAIN CURRENT
DD
(A)
I
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
G G
(V )
I
D D
I
GG
f=470M Hz ,
V
DD
=12.5V ,
P
in
=50m W
P
out
18
16
14
12
10
8
6
4
2
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
GG
(V )
I
D D
f=490M Hz ,
V
DD
=12.5V ,
P
in
=50m W
P
out
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
out
(W)
GATE CURRENT I
G
(mA)
G
DRAIN CURRENT
DD
(A)
I
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
G G
(V )
rd
18
f=520M Hz ,
V
DD
=12.5V ,
P
in
=50m W
P
out
16
14
12
10
8
I
D D
I
GG
I
GG
6
4
2
0
RA60H4452M1
MITSUBISHI ELECTRIC
4/9
3 Mar2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4452M1
OUTLINE DRAWING
(mm)
67±1
60±1
2-R2±0.5
49.8±1
(3.26)
19.4±1
10.7±1
① ②
③
④
15±1
12.5±1
17±1
44±1
56±1
3.1+0.6/-0.4
0.6±0.2
7.3±0.5
（2.6）
4±0.5
1 RF Input (P
in
)
2 Gate Voltage(V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
（9.9）
18±1
RA60H4452M1
MITSUBISHI ELECTRIC
5/9
3 Mar2008
rd
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