MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA55H4452M
BLOCK DIAGRAM
RoHS Compliance ,
440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA55H4452M is a 55-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The
output power and drain current increase as the gate voltage
increases. With a gate voltage around 4V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 4.5V (typical) and 5V
(maximum). At V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>55W,
η
T
>43% @ f=440-490MHz,
P
out
>45W,
η
T
>35% @ f=491-520MHz,
V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA55H4452M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA55H4452M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA55H4452M
MITSUBISHI ELECTRIC
1/8
14 March 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H4452M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=440-520MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
65
-30 to +110
-40 to +110
UNIT
V
V
MW
W
°C
°C
Note.1.The above parameters are independently guaranteed.
Note.2.In order to keep high reliability of the equipment, it is better to keep the module temperature of the module is
recommended to keep lower than 90°C under all conditions, and to keep lower than 60°C under standard conditions.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
Frequency Range
Output Power
Total Efficiency
V
DD
=12.5V,V
GG
=5V, P
in
=50mW
2
nd
CONDITIONS
MIN
440
TYP
MAX
520
UNIT
MHz
W
%
dBc
—
mA
—
55 @440-490MHz
45 @491-520MHz
43 @440-490MHz
35 @491-520MHz
-50
3:1
1
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<65W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, Load VSWR=20:1
P
out
=55W (V
GG
control)@440-490MHz
P
out
=45W (V
GG
control)@491-520MHz
No parasitic oscillation
No degradation or
destroy
Harmonic
Input VSWR
Gate Current
Stability
—
Load VSWR Tolerance
—
Note. All parameters, conditions, ratings, and limits are subject to change without notice.
RA55H4452M
MITSUBISHI ELECTRIC
2/8
14 March 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H4452M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
P
out
out
(W)
2
nd
, 3 HARMONICS versus FREQUENCY
80
70
TOTAL EFFICIENCY
η
T
(%)
-30
-40
HARMONICS (dBc)
-50
-60
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
rd
70
INPUT VSWR
ρ
in
(-)
60
50
40
30
20
10
ρ
in
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
η
T
60
50
40
30
20
10
OUTPUT POWER P
-70
3
rd
0
0
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
-80
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
20
16
12
DRAIN CURRENT I
DD
(A)
60
out
(dBm)
24
Gp
Gp
OUTPUT POWER P
30
20
10
0
-10
-5
0
5
10
INPUT POWER P
in
(dBm)
15
20
I
DD
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
OUTPUT POWER P
40
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
16
12
8
4
0
8
4
0
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DRAIN CURRENT I
DD
(A)
60
out
(dBm)
24
Gp
POWER GAIN Gp(dB)
OUTPUT POWER P
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
12
8
4
0
OUTPUT POWER P
40
16
POWER GAIN Gp(dB)
Gp
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
16
12
8
4
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
120
110
100
90
80
70
60
50
40
30
20
10
0
2
out
(W)
DRAIN CURRENT I
DD
(A)
I
DD
I
DD
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
RA55H4452M
MITSUBISHI ELECTRIC
3/8
14 March 2008
DRAIN CURRENT I
DD
(A)
f=440MHz,
V
GG
=5V,
P
in
=50m W
P
out
f=470MHz,
V
GG
=5V,
P
in
=50m W
P
out
24
22
20
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
OUTPUT POWER P
DRAIN CURRENT I
DD
(A)
50
P
out
20
50
P
out
20
DRAIN CURRENT
I
DD
(A)
50
POWER GAIN Gp(dB)
P
out
50
POWER GAIN Gp(dB)
P
out
20
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H4452M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
100
90
80
70
60
50
40
30
20
10
0
2
out
(W)
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
22
20
18
16
14
12
10
8
6
4
2
0
16
120
110
100
90
80
70
60
50
40
30
20
10
0
2
f=520MHz,
V
GG
=5V,
P
in
=50m W
DRAIN CURRENT I
DD
(A)
I
DD
I
DD
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
90
out
(W)
18
f=470MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
80
70
60
50
40
30
20
10
0
2.5
DRAIN CURRENT I
DD
(A)
OUTPUT POWER P
OUTPUT POWER P
12
I
DD
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
I
DD
12
10
8
6
4
2
0
10
8
6
4
2
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
90
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
18
out
(W)
90
80
70
60
50
40
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
f=520MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
18
16
DRAIN CURRENT I
DD
(A)
14
I
DD
80
70
60
50
40
30
20
10
0
2.5
OUTPUT POWER P
I
DD
10
8
6
4
2
0
OUTPUT POWER P
12
DRAIN CURRENT I
DD
(A)
f=490MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
16
14
12
10
8
6
4
2
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
5.5
RA55H4452M
MITSUBISHI ELECTRIC
4/8
DRAIN CURRENT I
DD
(A)
f=440MHz,
V
DD
=12.5V,
P
in
=50m W
P
out
16
14
80
70
16
14
DRAIN CURRENT I
DD
(A)
f=490MHz,
V
GG
=5V,
P
in
=50m W
P
out
P
out
24
22
20
18
16
14
12
10
8
6
4
2
0
OUTPUT POWER P
OUTPUT POWER P
14 March 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA55H4452M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.60 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA55H4452M
MITSUBISHI ELECTRIC
5/8
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
14 March 2008
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
