MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4047M1
BLOCK DIAGRAM
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the nominal output signal (P
out
=30W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
V
GG
is 4V (typical) and 5V (maximum).
At V
GG
=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>30W,
η
T
>42% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current I
GG
=1mA (typ) @ V
GG
=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA30H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H4047M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4047M1
MITSUBISHI ELECTRIC
1/9
3 Mar 2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4047M1
MAXIMUM RATINGS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V, P
in
=0W
V
DD
<12.5V, P
in
=50mW
f=400-470MHz,
V
GG
<5V
RATING
17
6
100
45
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
F
P
out
ηT
2f
o
ρ
in
I
GG
I
DD
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
V
DD
=0V, V
GG
=5V, P
in
=0W
V
DD
=17V, V
GG
=0V, P
in
=0W
V
DD
=10.0-15.2V, P
in
=25-70mW,
5<P
out
<40W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW,
P
out
=30W (V
GG
control), Load VSWR=20:1
MIN
400
30
42
TYP
MAX
470
UNIT
MHz
W
%
Harmonic
-40
3:1
1
1
No parasitic oscillation
No degradation or destroy
dBc
—
mA
mA
—
—
Input VSWR
Gate Current
Leakage Current
Stability
Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H4047M1
MITSUBISHI ELECTRIC
2/9
3 Mar 2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4047M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O U T PU T PO WE R , T O T AL E FFIC IE N C Y ,
v e rsus FR E Q U E N C Y
70
OUTPUT POWER P
out
(W)
TOTAL EFFICIENCY(%)
60
50
40
30
20
10
390 400
410 420 430
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
P
out
2
nd
, 3
rd
H AR M O N IC S v e rsus FR E Q U E N C Y
-30
HARMONICS (dBc)
η
T
-40
-50
-60
-70
-80
390 400 410
420 430 440 450
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
3
rd
440 450 460
470 480
460 470 480
F RE QUE NCY f(M Hz )
FRE Q UE NCY f(M Hz )
IN PU T VSWR v e rsus FR E Q U E N C Y
5
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
INPUT VSWR
ρ
in
(-)
4
3
2
ρ
in
1
390 400
410 420
FRE Q UE NCY f(M Hz )
430 440
450 460
470 480
O UT PUT PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus INPUT PO WER
60
OUTPUT POWER P
out
(dBm)
50
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=400M Hz ,
V
DD
=12.5V ,
V
GG
=5V
Gp
P
out
O UT PU T PO WER, PO WER G AIN and
DRAIN CU RRENT v e rsus INPUT PO WER
24
OUTPUT POWER P
out
(dBm)
DRAIN CURRENT I
D
(A)
D
POWER GAIN Gp(dB)
20
16
12
8
4
0
20
60
50
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=430M Hz ,
V
DD
=12.5V ,
V
GG
=5V
Gp
P
out
24
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
D
(A)
D
20
16
12
8
4
0
20
POWER GAIN Gp(dB)
15
15
INP UT POW E R P
in
(dB m )
INP UT P OW E R P
in
(dB m )
O UT PUT PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus INPUT PO WER
60
OUTPUT POWER P
out
(dBm)
50
40
30
20
I
D D
Gp
P
out
O UT PU T PO WER, PO WER G AIN and
DRAIN CU RRENT v e rsus INPUT PO WER
24
DRAIN CURRENT I
D
(A)
D
20
16
12
8
OUTPUT POWER P
out
(dBm)
60
50
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=470M Hz ,
V
DD
=12.5V ,
V
GG
=5V
Gp
P
out
24
20
16
12
8
4
0
20
POWER GAIN Gp(dB)
10
0
-10
-5
0
5
10
f=450M Hz ,
V
DD
=12.5V ,
V
GG
=5V
4
0
20
POWER GAIN Gp(dB)
15
15
INP UT POW E R P
in
(dB m )
INP UT P OW E R P
in
(dB m )
RA30H4047M1
MITSUBISHI ELECTRIC
3/9
3 Mar 2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4047M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
60
OUTPUT POWER P
out
(W)
50
40
30
I
D D
f=400M Hz ,
V
GG
=5V ,
P
in
=50m W
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
10
60
50
40
30
I
D D
f=430M Hz ,
V
GG
=5V ,
P
in
=50m W
12
DRAIN CURRENT I
D
(A)
D
DRAIN CURRENT
DD
(A)
I
DRAIN CURRENT
DD
(A)
I
10
P
out
P
out
8
6
4
2
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
8
6
4
2
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
20
10
0
20
10
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
f=450M Hz ,
V
GG
=5V ,
P
in
=50m W
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
10
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
f=470M Hz ,
V
GG
=5V ,
P
in
=50m W
12
DRAIN CURRENT
DD
(A)
I
10
P
out
P
out
8
6
4
2
0
8
6
4
2
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
GG
(V )
f=400M Hz ,
V
D D
=12.5V ,
P
in
=50m W
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
10
60
50
40
30
I
D D
f=430M Hz ,
V
DD
=12.5V ,
P
in
=50m W
12
10
P
out
P
out
8
6
4
2
0
8
6
4
2
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
G G
(V )
I
D D
20
10
0
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
60
OUTPUT POWER P
out
(W)
50
40
30
I
D D
f=450M Hz ,
V
D D
=12.5V ,
P
in
=50m W
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E
12
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
10
60
50
40
30
I
D D
f=470M Hz ,
V
DD
=12.5V ,
P
in
=50m W
12
10
P
out
P
out
8
6
4
2
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
GG
(V )
8
6
4
2
0
0
1
2
3
4
5
6
GA TE V OLTA GE V
G G
(V )
20
10
0
20
10
0
RA30H4047M1
MITSUBISHI ELECTRIC
4/9
3 Mar 2008
rd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4047M1
OUTLINE DRAWING
(mm)
67±1
60±1
2-R2±0.5
49.8±1
(3.26)
19.4±1
10.7±1
① ②
③
④
15±1
12.5±1
17±1
44±1
56±1
3.1+0.6/-0.4
0.6±0.2
7.3±0.5
（2.6）
4±0.5
1 RF Input (P
in
)
2 Gate Voltage(V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
（9.9）
18±1
RA30H4047M1
MITSUBISHI ELECTRIC
5/9
3 Mar 2008
rd
stm32/stm8
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