MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07M4452MSA
BLOCK DIAGRAM
2
3
RoHS Compliance ,
440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M4452MSA is a 7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=7.2V, V
GG
=0V)
• P
out
>7.0W @ V
DD
=7.2V, V
GG
=3.5V, P
in
=50mW
•
η
T
>40% @ P
out
=6.5W (V
GG
control), V
DD
=7.2V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 9.6 x 5.3 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA07M4452MSA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA07M4452MSA-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07M4452MSA
MITSUBISHI ELECTRIC
1/8
5 Feb 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M4452MSA
RATING
9.2
4
70
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<3.5V
V
DD
<7.2V, P
in
=0mW
f=400-470MHz,V
GG
<3.5V
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
3f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
rd
CONDITIONS
V
DD
=7.2V,V
GG
=3.5V, P
in
=50mW
MIN
440
7.0
40
TYP
MAX
520
UNIT
MHz
W
%
Harmonic
3 Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
P
out
=6.5W (V
GG
control),
V
DD
=7.2V,
P
in
=50mW
1
V
DD
=4.0-9.2V, P
in
=25-70mW, P
out
<8W (V
GG
control),
Load VSWR=8:1
V
DD
=9.2V, P
in
=50mW, P
out
=7W (V
GG
control),
Load VSWR=20:1
-25
-30
4:1
dBc
dBc
—
mA
—
—
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07M4452MSA
MITSUBISHI ELECTRIC
2/8
5 Feb 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M4452MSA
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
10
P
out
9
8
V
DD
=7.2V
7
V
GG
=3.5V
6
Pin=50mW
ηt
5
4
3
ρin
2
1
0
420 440 460 480 500
FREQUENCY f(MHz)
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
420
V
DD
=7.2V
V
GG
=3.5V
Pin=50mW
520
100
90
80
70
60
50
40
30
20
10
0
540
TOTAL EFFICIENCY
ηT(%)
OUTPUT POWER P
out
(W)
INPUT VSWR(-)
2 ,3 HARMONICS(dBc)
2
nd
rd
nd
3
rd
440
460
480
500
520
540
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
-10
OUTPUT POWER P
out
(dBm)
POWER GAIN(dB)
OUTPUT POWER P
out
(dBm)
POWER GAIN(dB)
f=440MHz
V
DD
=7.2V
V
GG
=3.5V
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
f=490MHz
V
DD
=7.2V
V
GG
=3.5V
P
out
DRAIN CURRENT I
DD
(A)
P
out
Gp
I
DD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
15
20
Gp
I
DD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
15
20
-5
INPUT POWER P
IN
(dBm)
0
5
10
-10
-5
INPUT POWER P
IN
(dBm)
0
5
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
38
36
34
32
30
28
26
24
22
20
-10
OUTPUT POWER P
out
(dBm)
POWER GAIN(dB)
DRAIN CURRENT I
DD
(A)
f=520MHz
V
DD
=7.2V
V
GG
=3.5V
P
out
Gp
I
DD
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
15
20
-5
INPUT POWER P
IN
(dBm)
0
5
10
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
4.0
3.0
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
0
f=440MHz
P
IN
=50mW
V
GG
=3.5V
16
14
12
10
8
6
4
2
0
0
1
2
DRAIN VOLTAGE V
DD
(V)
P
out
f=490MHz
P
IN
=50mW
V
GG
=3.5V
4.0
3.5
3.0
I
DD
3.5
2.5
P
out
I
DD
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
1
2
DRAIN VOLTAGE V
DD
(V)
3
4
5
6
7
8
9
10
3
4
5
6
7
8
9 10
RA07M4452MSA
MITSUBISHI ELECTRIC
3/8
5 Feb 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M4452MSA
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
OUTPUT POWER P
out
(W)
4.0
3.0
I
DD
DRAIN CURRENT I
DD
(A)
f=520MHz
P
IN
=50mW
V
GG
=3.5V
14
12
10
8
6
4
2
0
0
3.5
2.5
2.0
P
out
1.5
1.0
0.5
0.0
1
2
DRAIN VOLTAGE V
DD
(V)
3
4
5
6
7
8
9 10
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
14
OUTPUT POWER P
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
14
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
3.5
f=440MHz
P
IN
=50mW
V
DD
=7.2V
3.5
DRAIN CURRENT I
DD
(A)
f=490MHz
P
IN
=50mW
V
DD
=7.2V
12
10
8
6
4
2
0
1.0
3.0
I
DD
P
out
12
10
8
6
4
2
0
1.0
3.0
I
DD
P
out
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
GATE VOLTAGE V
GG
(V)
2.0
3.0
4.0
GATE VOLTAGE V
GG
(V)
2.0
3.0
4.0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
14
OUTPUT POWER P
out
(W)
3.5
DRAIN CURRENT I
DD
(A)
f=520MHz
P
IN
=50mW
V
DD
=7.2V
12
10
8
6
4
2
0
1.0
3.0
I
DD
P
out
2.5
2.0
1.5
1.0
0.5
0.0
GATE VOLTAGE V
GG
(V)
2.0
3.0
4.0
RA07M4452MSA
MITSUBISHI ELECTRIC
4/8
5 Feb 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA07M4452MSA
OUTLINE DRAWING
(mm)
RA07M4452MSA
MITSUBISHI ELECTRIC
5/8
5 Feb 2008
微控制器 MCU
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