MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA01L8693MA
BLOCK DIAGRAM
2
3
RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER
DESCRIPTION
The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 0.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 1.5V (typical) and 2.0V
(maximum). At V
GG
=2.0V, the typical gate current is 1mA.
1
4
5
1
2
3
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=3.3V, V
GG
=0V)
• P
out
>1.4W,
η
T
>38% @ V
DD
=3.3V, V
GG
=2.0V, P
in
=30mW
• Broadband Frequency Range: 865-928MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=2.0V
• Module Size: 9.1 x 9.2 x 1.8 mm
4
5
PACKAGE CODE: H58
RoHS COMPLIANCE
• RA01L8693MA -101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA01L8693MA -101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA01L8693MA
MITSUBISHI ELECTRIC
1/13
21 Nov. 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA01L8693MA
MAXIMUM RATINGS
(T
case
=+25deg.C. unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
f=865-928MHz, V
GG
<2.0V
Z
G
=Z
L
=50ohm
CONDITIONS
V
GG
<2.0V, Z
G
=Z
L
=50ohm
V
DD
<3.3V, P
in
=0mW, Z
G
=Z
L
=50ohm
RATING
6
3
50
3
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25
°C
, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
P
out
(2)
η
T
(2)
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
865
1.4
TYP
MAX
928
UNIT
MHz
W
%
Harmonic
V
DD
=3.3V
V
GG
=2.0V
P
iN
=30mW
V
DD
=5.0V,V
GG
=2.0V, P
iN
=30mW
V
DD
=5.0V
P
iN
=30mW,P
OUT
=2W (V
GG
control)
V
DD
=2.5/3.3/6.0V, V
GG
=0.5-2.0V,
P
IN
=20-50mW ,
Zg=50ohm,
Po<2.5W
Load VSWR=4:1
38
-30
4.4:1
2
35
dBc
—
W
%
Input VSWR
Output Power
Total Efficiency
—
Stability
No parasitic oscillation
—
—
Load VSWR Tolerance
V
DD
=6.0V, P
iN
=30mW,
P
out
=2W (V
GG
control),
Zg=50ohm, Load VSWR=20:1
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA01L8693MA
MITSUBISHI ELECTRIC
2/13
21 Nov. 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA01L8693MA
TYPICAL PERFORMANCE
(Vdd=3.3V,T
case
=+25deg.C, Z
G
=Z
L
=50Ω, unless otherwise specified)
RA01L8693MA
MITSUBISHI ELECTRIC
3/13
21 Nov. 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA01L8693MA
TYPICAL PERFORMANCE
(T
case
=+25deg.C, Z
G
=Z
L
=50Ω, unless otherwise specified)
RA01L8693MA
MITSUBISHI ELECTRIC
4/13
21 Nov. 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA01L8693MA
TYPICAL PERFORMANCE
(Vdd=5.0V,T
case
=+25deg.C, Z
G
=Z
L
=50Ω, unless otherwise specified)
RA01L8693MA
MITSUBISHI ELECTRIC
5/13
21 Nov. 2008
th
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