UNISONIC TECHNOLOGIES CO.,LTD.
8550S
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
2
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
1
3
MARKING
SOT-23
*Pb-free plating product number: 8550SL
B9
PIN CONFIGURATION
PIN NO.
PIN NAME
1
EMITTER
2
COLLECTOR
3
BASE
ORDERING INFORMATION
Order Number
Normal
Lead free
8550S-AE3-R
8550SL-AE3-R
Package
SOT-23
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD.
1
QW-R206-002,C
8550S
PARAMETERS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
P
D
I
C
T
J
T
STG
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
RATING
-30
-20
-5
1
-700
150
-40 ~ +150
UNITS
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=-100µA,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-100µA,Ic=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,Ic=0
V
CE
=-1V,Ic=-1mA
V
CE
=-1V,Ic=-150 mA
V
CE
=-1V,Ic=-500mA
Ic=-500mA,I
B
=-50mA
Ic=500mA,I
B
=-50mA
V
CE
=-1V,Ic=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=10V,I
E
=0, f=1MHz
MIN
-30
-20
-5
TYP
MAX
UNIT
V
V
V
uA
nA
-1
-100
100
120
40
400
-0.5
-1.2
-1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-002,C
8550S
■
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS
Fig.1 Static characteristics
0.5
Fig.2 DC current Gain
10
3
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
Ic,Collector current (mA)
V
CE
=1V
H
FE
, DC current Gain
2.0
0.4
2
10
0.3
I
B
=1.5mA
0.2
I
B
=1.0mA
I
B
=0.5mA
1
10
0.1
0
0
0.4
0.8
1.2
1.6
10
0
-1
10
10
0
10
1
10
2
10
3
Collector -Emitter voltage ( V)
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
10
2
4
10
Fig.4 Saturation voltage
Ic=10*I
B
Ic,Collector current (mA)
10
1
Saturation voltage (mV)
V
CE
=1V
3
10
V
BE
(sat)
10
0
2
10
V
CE
(sat)
1
10
-1
10
0
0.2
0.4
0.6
0.8
1.0
-1
10
10
0
10
1
10
2
10
3
Base-Emitter voltage (V)
Ic,Collector current (mA)
Current Gain-bandwidth product,f
T
(MHz)
Fig.5 Current gain-bandwidth
product
10
3
10
3
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
V
CE
=10V
2
10
10
2
f=1MHz
I
E
=0
10
1
10
1
10
0
10
0
1
10
2
10
3
10
10
0
0
10
10
1
10
2
10
3
Ic,Collector current (mA)
Collector -Base voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-002,C
8550S
PNP EPITAXIAL SILICON TRANSISTOR
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all U TC products described or contained
herein. U TC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-002,C
嵌入式系统
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