UNISONIC TECHNOLOGIES CO.,
8550S
PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL PNP
TRANSISTOR
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
1
2
3
MARKING
SOT-23
B9
*Pb-free plating product number: 8550SL
PIN CONFIGURATION
PIN NO.
PIN NAME
1
EMITTER
2
COLLECTOR
3
BASE
ORDERING INFORMATION
Order Number
Normal
Lead free
8550S-AE3-R
8550SL-AE3-R
Package
SOT-23
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R206-002,B
8550S
PARAMETERS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
P
D
I
C
T
J
T
STG
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
RATING
-30
-20
-5
1
-700
150
-40 ~ +150
UNITS
V
V
V
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=-100µA,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-100µA,Ic=0
V
CB
=-30V,I
E
=0
V
EB
=-5V,Ic=0
V
CE
=-1V,Ic=-1mA
V
CE
=-1V,Ic=-150 mA
V
CE
=-1V,Ic=-500mA
Ic=-500mA,I
B
=-50mA
Ic=500mA,I
B
=-50mA
V
CE
=-1V,Ic=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=10V,I
E
=0, f=1MHz
MIN
-30
-20
-5
TYP
MAX
UNIT
V
V
V
uA
nA
-1
-100
100
120
40
110
400
-0.5
-1.2
-1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-002,B
8550S
■
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERICS
Fig.1 Static characteristics
0.5
Fig.2 DC current Gain
10
3
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
Ic,Collector current (mA)
V
CE
=1V
H
FE
, DC current Gain
2.0
0.4
2
10
0.3
I
B
=1.5mA
0.2
I
B
=1.0mA
I
B
=0.5mA
1
10
0.1
0
0
0.4
0.8
1.2
1.6
10
0
-1
10
10
0
10
1
10
2
10
3
Collector -Emitter voltage ( V)
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
10
2
10
4
Fig.4 Saturation voltage
Ic=10*I
B
Ic,Collector current (mA)
10
1
Saturation voltage (mV)
V
CE
=1V
10
3
V
BE
(sat)
10
0
10
2
V
CE
(sat)
1
-1
10
10
0
10
1
10
2
10
3
-1
10
0
0.2
0.4
0.6
0.8
1.0
10
Base-Emitter voltage (V)
Ic,Collector current (mA)
Current Gain-bandwidth product,f
T
(MHz)
Fig.5 Current gain-bandwidth
product
10
3
10
3
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
V
CE
=10V
2
10
10
2
f=1MHz
I
E
=0
10
1
10
1
10
0
10
0
10
1
10
2
10
3
10
0
10
0
10
1
10
2
10
3
Ic,Collector current (mA)
Collector -Base voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-002,B
8550S
PNP EPITAXIAL SILICON TRANSISTOR
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-002,B
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