PS3G07S
Features
Package
φ3
type, Water clear epoxy
Through-hole Phototransistor/φ3 Type
Product features
・Photo
Current : 5.0mA TYP. (V
CE
=5V,Ee=10mW/cm
2
)
・
Flat Lens
・Lead–free
soldering compatible
・RoHS
compliant
Peak Sensitivity Wavelength
Half Intensity Angle
Die materials
Rank grouping parameter
Soldering methods
880nm
150 deg.
Si
Sorted by photo current per rank taping
TTW (Through The Wave) soldering and manual soldering
※Please
refer to Soldering Conditions about soldering.
ESD
Packing
2kV (HBM)
Bulk : 200pcs(MIN.)
Recommended Applications
Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications
2009.3.23
Page 1
PS3G07S
Through-hole Phototransistor/φ3 Type
Absolute Maximum Ratings
Item
Collector Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Operating Temperature
Storage Temperature
Symbol
Absolute Maximum Ratings
(Ta=25℃)
Unit
mW
V
V
mA
℃
℃
Pc
V
CEO
V
ECO
Ic
T
opr
T
stg
75
30
5
30
-30½ +85
-30½ +100
Electro-Optical Characteristics
Item
Symbol
Characteristics
Min.
Photo Current
V
CE
=5V,
Ee=10mW/cm
2
※
1
(Ta=25℃)
Conditions
Unit
mA
mA
mA
1.5
5
27
Ic
TYP.
Max.
Response Time
V
CE
=10V, Ic=2mA,
R
L
=100Ω
V
CEO
=10V
V
CE
=5V
Ic=0.5mA,
Ee=10mW/cm
2
-
tr/tf
TYP.
5/5
μs
Dark Current
Peak Sensitivity Wavelength
Collector-Emitter
Saturation Voltage
Spatial Half Width
I
CEO
λp
V
C E ( SA T)
⊿θ
Max.
TYP.
TYP.
TYP.
0.2
880
0.1
150
μA
nm
V
deg.
※
1 Color temperature is 2,856K. Employs a standard tungsten lamp.
2009.3.23
Page 2
PS3G07S
Through-hole Phototransistor/φ3 Type
Photo Current Rank
Ic(mA)
R ank
MIN.
A
B
C
D
E
1.5
2.6
4.5
7.8
13.5
MAX .
3.0
5.2
9.0
15.6
27.0
V
CE
= 5V
E e = 10mW/cm
2
(Ta=25℃)
Condition
※Please
contact our sales staff concerning rank designation.
2009.3.23
Page 3
PS3G07S
Through-hole Phototransistor/φ3 Type
Technical Data
Wavelength vs. Relative Sensitivity
Condition : Ta = 25℃, Vce = 0V
Spatial Distribution Example
Condition : Ta = 25℃
Relative Sensitivity (%)
Wavelength [nm]
Relative Photo Current (%)
Irradiance vs. Relative Photo Current
Condition : Ta = 25℃, Vce = 5V
Collector-Emitter Voltage vs. Photo Current
Condition : Ta = 25℃
Relative Photo Current Ic
Irradiance Ee(mW/cm
2
)
It is based on Ee=1mW/cm
2
.
Employs a standard tungsten lamp of 2,856K.
Photo Current Ic (mA)
Collector-Emitter Voltage V
CE
(V)
Employs a standard tungsten lamp of 2,856K.
2009.3.23
Page 4
PS3G07S
Through-hole Phototransistor/φ3 Type
Technical Data
Response Time Measuring Circuit
Ambient Temperature vs. Relative Photo Current
Condition : V
CE
=10V, Ic=2mA, Ta=25℃
tr
-- -- -- -- -- --
tf
Response Time (μs)
Load Resistance : R
L
(Ω)
Ambient Temperature vs. Collector Dissipation
Ambient Temperature vs. Dark Current
Condition : V
CEO
= 10V
Collector Dissipation : Pc(mW)
Ambient Temperature : Ta(℃)
Dark Current : I
CEO
(μA)
Ambient Temperature : Ta(℃)
2009.3.23
Page 5
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