MWI 150-06 A8
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
I
C25
= 170 A
= 600 V
V
CES
V
CE(sat) typ.
= 2.0 V
Preliminary data
1
2
5
6
9
10
19
17
15
3
4
14, 20
7
8
11
12
E72873
See outline drawing for pin arrangement
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 1.5
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
±
20
170
115
I
CM
= 300
V
CEK
≤
V
CES
10
515
V
V
A
A
A
µs
W
Features
€
€
NPT IGBT technology
€
€
low saturation voltage
€
€
low switching losses
€
€
switching frequency up to 30 kHz
€
€
square RBSOA, no latch up
€
€
high short circuit capability
€
€
positive temperature coefficient for
easy parallelling
€
€
MOS input, voltage controlled
€
€
ultra fast free wheeling diodes
€
€
solderable pins for PCB mounting
€
€
package with copper base plate
Advantages
T
C
= 25°C
€
€
space savings
€
€
reduced protection circuits
€
€
package designed for wave soldering
Typical Applications
€
€
AC motor control
€
€
AC servo and robot drives
€
€
power supplies
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 1.5
Ω;
T
VJ
= 125°C
non-repetitive
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.0
2.3
4.5
1.1
400
125
30
225
35
2.3
4.6
6.5
520
2.5
6.5
1.5
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.24 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 150 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 150 A
V
GE
= ±15 V; R
G
= 1.5
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 150 A
(per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
1-2
MWI 150-06 A8
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
210
130
A
A
Equivalent Circuits for Simulation
Conduction
Symbol
V
F
I
RM
t
rr
R
thJC
Module
Symbol
T
VJ
T
JM
T
stg
V
ISOL
M
d
Symbol
R
pin-chip
d
S
d
A
R
thCH
Weight
Conditions
I
F
= 150 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 150 A; di
F
/dt = -750 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
1.9
1.4
37
100
2.0
V
V
A
ns
0.41 K/W
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.1 V; R
0
= 8 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.1 V; R
0
= 2.25 m
Ω
Thermal Response
Conditions
operating
Maximum Ratings
-40...+125
+150
-40...+125
2500
3-6
°C
°C
°C
V~
Nm
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
IGBT (typ.)
C
th1
= 0.295 J/K; R
th1
= 0.176 K/W
C
th2
= 1.750 J/K; R
th2
= 0.064 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.21 J/K; R
th1
= 0.317 K/W
C
th2
= 1.28 J/K; R
th2
= 0.093 K/W
Characteristic Values
min.
typ. max.
1.8
mΩ
mm
mm
0.01
300
K/W
g
Creepage distance on surface
Strike distance in air
with heatsink compound
10
10
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
2-2
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