电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IDT70V658S12DR9

产品描述Dual-Port SRAM, 64KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
产品类别存储    存储   
文件大小317KB,共24页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 全文预览

IDT70V658S12DR9概述

Dual-Port SRAM, 64KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208

IDT70V658S12DR9规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
针数208
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间12 ns
JESD-30 代码S-PQFP-G208
JESD-609代码e0
长度28 mm
内存密度2359296 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量208
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织64KX36
封装主体材料PLASTIC/EPOXY
封装代码FQFP
封装形状SQUARE
封装形式FLATPACK, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)225
认证状态Not Qualified
座面最大高度4.1 mm
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度28 mm
Base Number Matches1

文档预览

下载PDF文档
HIGH-SPEED 3.3V
IDT70V659/58/57S
128/64/32K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V659/58/57 easily expands data bus width to 72 bits
or more using the Master/Slave select when cascading
more than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 208-pin Plastic Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Functional Block Diagram
BE
3L
BE
2L
BE
1L
BE
0L
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
B
E
0
L
B
E
1
L
B
E
2
L
B
E
3
L
BBBB
EEEE
3 2 10
RRRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
128/64/32K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
16 L(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
16R(1)
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L(2,3)
SEM
L
INT
L(3)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
M/S
BUSY
R(2,3)
SEM
R
INT
R(3)
TDI
TDO
JTAG
TMS
TCK
TRST
4869 drw 01
NOTES:
1. A
16
is a NC for IDT70V658. Also, Addresses A
16
and A
15
are NC's for IDT70V657.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
MARCH 2004
DSC-4869/5
1
©2004 Integrated Device Technology, Inc.

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 637  468  326  726  724  14  11  4  6  55 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved