Philips Semiconductors
Product specification
Buffer with open-drain output
FEATURES
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
SOT353 and SOT753 packages
•
Output capability standard (open-drain)
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G07; 74AHCT1G07
DESCRIPTION
The 74AHC1G/AHCT1G07 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G07 provides the non-inverting
buffer.
The output of the 74AHC1G/AHCT1G07 devices is
open-drain and can be connected to other open-drain
outputs to implement active-LOW wired-OR or
active-HIGH wired-AND functions. For digital operation
this device must have a pull-up resistor to establish a logic
HIGH-level.
TYPICAL
SYMBOL
t
PZL
t
PLZ
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
INPUT
A
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF-state.
OUTPUT
Y
L
Z
PARAMETER
propagation delay A to Y
propagation delay A to Y
input capacitance
power dissipation capacitance C
L
= 50 pF; f = 1 MHz; notes 1 and 2
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
C
L
= 15 pF; V
CC
= 5 V
2.5
4.2
1.5
5
AHCT1G
2.8
3.9
1.5
6.5
ns
ns
pF
pF
UNIT
2002 Oct 02
2
Philips Semiconductors
Product specification
Buffer with open-drain output
RECOMMENDED OPERATING CONDITIONS
74AHC1G07; 74AHCT1G07
74AHC
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
(∆t/∆f)
PARAMETER
supply voltage
input voltage
output voltage
ambient
temperature
active mode
high-impedance mode
CONDITIONS
MIN.
2.0
0
0
0
TYP.
5.0
−
−
−
+25
+25
−
−
MAX.
5.5
5.5
V
CC
6.0
+85
+125
100
20
MIN.
4.5
0
0
0
−40
−40
−
−
74AHCT
UNIT
TYP.
5.0
−
−
−
+25
+25
−
−
MAX.
5.5
5.5
V
CC
6.0
+85
+125
−
20
V
V
V
V
°C
°C
ns/V
ns/V
see DC and AC
−40
characteristics per device
−40
−
−
input rise and fall V
CC
= 3.3
±0.3
V
times ratios
V
CC
= 5
±0.5
V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
V
O
I
O
I
CC
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output clamping diode
current
output voltage
output sink current
V
CC
or GND current
storage temperature
power dissipation per
package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V; note 1
V
O
<
−0.5
V; note 1
active mode; note 1
high-impedance mode; note 1
V
O
>
−0.5
V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−0.5
−0.5
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
+7.0
+7.0
±25
±75
+150
250
V
V
mA
mA
V
V
mA
mA
°C
mW
UNIT
2002 Oct 02
4
Philips Semiconductors
Product specification
Buffer with open-drain output
DC CHARACTERISTICS
74AHC1G07; 74AHCT1G07
74AHC1G family
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input
voltage
V
CC
(V)
2.0
3.0
5.5
V
IL
LOW-level input
voltage
2.0
3.0
5.5
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 50
µA
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 8.0 mA
I
LI
I
OZ
I
CC
C
I
input leakage
current
V
I
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
5.5
MIN.
1.5
2.1
3.85
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0
0
0
−
−
−
−
−
1.5
25
−
−
−
0.5
0.9
1.65
0.1
0.1
0.1
0.36
0.36
0.1
T
amb
(°C)
−40
to +85
−
−
−
0.5
0.9
1.65
0.1
0.1
0.1
0.44
0.44
1.0
±2.5
10
10
−40
to +125
−
−
−
0.5
0.9
1.65
0.1
0.1
0.1
0.55
0.55
2.0
UNIT
TYP. MAX. MIN. MAX. MIN. MAX.
1.5
2.1
3.85
−
−
−
−
−
−
−
−
−
1.5
2.1
3.85
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
V
V
V
V
V
V
µA
3-state output
V
I
= V
IH
or V
IL
;
5.5
OFF-state current V
O
= V
CC
or GND
quiescent supply
current
input capacitance
V
I
= V
CC
or GND; 5.5
I
O
= 0
±0.25 −
1.0
10
−
−
±10.0 µA
20
10
µA
pF
2002 Oct 02
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
