Stanford Microdevices’ SGA-8343 is a high performance SiGe
HBT amplifier designed for operation from DC to 6 GHz. This RF
device uses the latest Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-8343 is optimized
for 3V operation but can be biased at 2V for low-voltage battery
operated systems. The device is easily matched as
Γ
OPT
is
very close to 50 ohms. This device provides high gain, low NF,
and excellent linearity at a low cost.
SGA-8343
Low Noise, High Gain SiGe HBT
Product Features
Typical Gain Performance
40
Gain, Gmax (dB)
2.4
2.1
1.8
1.5
1.2
Gmax
35
30
25
20
15
10
5
0
0
1
F
MIN
Gain
0.9
0.6
0.3
0
• 6 GHz Useful Bandwidth
• Low F
MIN
:
0.9 dB @ 0.9 GHz
1.1 dB @ 1.9 GHz
• High Gain (Gmax):
24 dB @ 0.9 GHz
19 dB @ 1.9 GHz
• Easily Matched with
|Γ
OPT
| = 0.17 @ 1.9 GHz
• OIP3 = +28.5 dBm, P1dB = +13 dBm
• Low Cost High Performance SiGe HBT
F
MIN
(dB)
Applications
• LNA for Wireless Infrastructure
• Fixed Wireless Infrastructure
• Wireless Data
• Driver Stage for Low Power Applications
• Oscillators
2
3
4
5
Frequency (GHz)
6
7
8
Symbol
Device Characteristics, T = 25ºC
V
CE
=3V, I
CQ
=10mA (unless otherw ise noted)
Maximum Available Gain
Z
S
=Z
S
*, Z
L
=Z
L
*
Insertion Gain
Z
S
=Z
L
=50
Ω
Minimum Noise Figure
Z
S
=Γ
OPT
, Z
L
=Z
LOPT
Output 1 dB compression point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Third Order Intercept Point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
DC Current Gain
Collector - Emitter Breakdown Voltage
Thermal Resistance (junction to lead)
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
V
CE
=2V, I
CQ
=20 mA
V
CE
=3V, I
CQ
=20 mA
V
CE
=2V, I
CQ
=20 mA
V
CE
=3V, I
CQ
=20 mA
Units
Min.
Typ.
23.9
19.3
17.7
21.8
16.3
14.3
0.9
1.1
1.2
10.0
13.3
24.0
28.5
Max.
G
MAX
dB
S
21
dB
F
min
P 1dB
OIP
3
h
FE
B V
C EO
Rth
dB
dB m
dB m
120
V
ºC/W
5.7
180
6.0
200
300
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101845 Rev. A
1
Preliminary
SGA-8343 Low Noise SiGe HBT
Typical Performance - Deembedded S-Parameters
Gain vs Frequency (3V,10mA)
40
0
Gain vs Frequency (2V,10mA)
Gain, Gmax (dB)
40
35
30
25
20
15
10
5
0
0
1
2
3
0
-5
-10
-15
-20
-25
-30
-35
-40
5
6
7
8
Gain, Gmax (dB)
35
30
25
20
15
10
5
0
0
1
2
3
Isolation
-5
-10
-15
-20
-25
-30
-35
-40
5
6
7
8
Isolation (dB)
Isolation (dB)
Isolation
Gmax
Gain
Gmax
Gain
4
4
Frequency (GHz)
S11,S22 vs Frequency (3V,10mA)
1.0
0.5
2.0
Frequency (GHz)
S11,S22 vs Frequency (2V,10mA)
1.0
0.5
2.0
8 GHz
6 GHz
0.2
5.0
0.2
8 GHz
6 GHz
5.0
4 GHz
3 GHz
0.0
0.2
0.5
1.0
2.0
5.0
inf
0.0
4 GHz
3 GHz
0.2
0.5
1.0
2.0
5.0
inf
2 GHz
S22
0.2
5.0
0.2
2 GHz
S22
5.0
1 GHz
S11
0.5
2.0
0.5
1 GHz
S11
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z
S
=Z
L
=50Ω. The data represents typical performace of the device. De-
embedded s-parameters can be downloaded from our website (www.stanfordmicro.com).
Typical Performance - P1dB, OIP3, Gain
Freq
(MH z )
V
CE
(V)
2
900
3
2
1900
3
2
2400
3
I
CQ
(mA)
10
20
10
20
10
20
10
20
10
20
10
20
P 1d B
(dB m)
10.0
10.2
13.0
13.3
10.0
10.2
13.0
13.3
10.0
10.2
13.0
13.3
OIP 3
(dB m)
22.0
24.0
24.5
28.0
23.0
26.0
26.0
28.5
23.0
24.0
27.5
29.0
Gain
(dB )
25.0
24.0
24.4
24.4
16.7
16.4
18.0
18.0
15.0
15.0
15.3
15.3
Z
LOPT
Mag
∠
Ang
0.50
∠
143.3
0.24
∠
16.6
0.36
∠
16.2
0.36
∠
16.2
0.43
∠
91.2
0.32
∠
24.1
0.54
∠
15.2
0.38
∠
14.0
0.31
∠
45.0
0.29
∠
33.3
0.44
∠
9.2
0.36
∠
13.3
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101845 Rev. A
2
Preliminary
SGA-8343 Low Noise SiGe HBT
Typical Performance - Noise Parameters
Noise Figure (3V, 10mA)
2.4
2
F
MIN
Gamma Opt (3V, 10mA)
30
25
20
15
10
0.5
1.0
2.0
F
MIN
(dB)
1.6
1.2
0.8
0.4
0
0
1
2
3
4
5
6
7
G
AS
G
AS
(dB)
0.0
0.2
5.0
2.4 GHz
0.2
1.9 GHz
0.9 GHz
1.0
2.0
5.0
inf
5
0
0.2
3 GHz
4 GHz
0.5
5 GHz
5.0
Frequency (GHz)
0.5
6 GHz
2.0
1.0
Noise Parameters - V
CE
=3V, I
C
=10mA
Freq
(MH z )
0.9
1.9
2.4
3
4
5
6
F
MIN
(dB )
0.94
1.1
1.18
1.27
1.5
1.73
2.02
Gamma Opt
Mag
∠
Ang
0.10
∠
55
0.17
∠
125
0.23
∠
157
0.23
∠
179
0.29
∠
-150
0.42
∠
-122
0.55
∠
-110
r
n
0.11
0.10
0.09
0.09
0.12
0.18
0.24
G
AS
(dB )
23.8
17.5
15.4
13.2
11.0
9.5
8.4
Gmax
(dB )
23.88
19.33
17.66
15.01
11.94
9.84
8.62
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101845 Rev. A
3
Absolute Maximum Ratings
Parameter
Collector Current
Base Current
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Operating Temperature
Storage Temperature Range
Power Dissipation
Operating Junction Temperature
Symbol
I
C
I
B
V
C EO
V
C BO
V
EBO
T
OP
T
stor
P
DISS
T
J
Value
72
1
5
12
4.5
-40 to +85
-40 to +150
325
+150
Unit
mA
mA
V
V
V
C
C
mW
C
Preliminary
SGA-8343 Low Noise SiGe HBT
Part Number Ordering Information
Part Number
SGA-8343
Reel Siz e
7"
Devices/Reel
3000
Part Symbolization
The part will be symbolized with an “A83” and a
Pin 1 indicator on the top surface of the package.
Pin Description
Pin #
1
2
3
4
Function
B a se
Emitter
Collector
Emitter
RF Input
Description
Connection to ground. Use via holes to reduce lead
inductance. Place vias as close to emitter leads as possible.
RF Output
Same as Pin 2
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Package Dimensions
.079
.051±.002
.021
4
3
.025
.049
C
L
.091
1
2
C
L
.024
.015 TYP(4X)
.014
.035
.038
NOTE:
1. ALL DIMENSIONS ARE IN INCHES
2. DIMENSIONS ARE INCLUSIVE OF PLATING
3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH &
METAL BURR
4. ALL SPECIFICATIONS COMPLY TO EIAJ SC70 FOR
TRIM/FORM. ie: REVERSE TRIM/FORM
6. PACKAGE SURFACE TO BE MIRROR FINISH
.005 TYP(4X)
.012
TYP(3X)
.024
A fully dimensioned package outline is available on our website.
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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