This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-5489 requires only DC
blocking and bypass capacitors for external components.
Small Signal Gain vs. Frequency
SGA-5489
DC-4000 MHz Silicon Germanium HBT
Cascadeable Gain Block
25
20
dB
15
10
5
0
1
2
3
Frequency GHz
4
5
Product Features
•
DC-4000 MHz Operation
•
Single Voltage Supply
•
High Output Intercept: +30.8dBm typ. at 850 MHz
•
Low Current Draw: 60mA at 3.3V typ.
•
Low Noise Figure: 2.8dB typ. at 850 MHz
Applications
•
Oscillator Amplifiers
•
PA for Low Power Applications
•
IF/ RF Buffer Amplifier
•
Drivers for CATV Amplifiers
Units
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
MHz
MHz
f = DC-5000 MHz
f = DC-5000 MHz
f = 850 MHz
f = 1950 MHz
f = 2400 MHz
f = 1950 MHz
-
-
dB
dB
dB
dB
V
o
Symbol
Parameters: Test Conditions:
Z
0
= 50 Ohms, I
D
= 60 mA, T = 25
o
C
Output Pow er at 1dB Compression
Min.
Typ.
16.0
14.6
13.5
30.8
27.4
25.7
19.7
17.9
17.1
2100
4000
1.50:1
1.50:1
23.5
23.5
23.1
2.4
Max.
P
1dB
IP
3
Third Order Intercept Point
Pow er out per tone = 0 dBm
S
21
BW
3dB
Bandw idth
S
11
S
22
S
12
NF
V
D
Rth,j-l
Small Signal Gain
3dB Bandw idth
(Determined by S
11
, S
22
Values)
Input VSWR
Output VSWR
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Voltage
Thermal Resistance (junction - lead)
3.1
3.3
97
4.1
C/W
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100618 Rev B
Preliminary
Preliminary
SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier
Absolute Maximum Ratings
Operation of this device above any one of these parameters
may cause permanent damage.
Bias Conditions should also satisfy the following expression:
I
D
V
D
(max) < (T
J
- T
OP
)/Rth, j-l
Parameter
Supply C urrent
Operati ng Temperature
Maxi mum Input Power
Storage Temperature Range
Operati ng Juncti on Temperature
Value
120
-40 to +85
+10
-40 to +150
+150
U nit
mA
C
dB m
C
C
Key parameters, at typical operating frequencies:
Typical
Parameter
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
25
o
C
20.2
3.0
31.3
16.3
20.3
23.3
19.7
2.8
30.8
16.0
17.5
23.5
17.9
2.4
27.4
14.6
15.2
23.5
17.1
3.7
25.7
13.5
14.7
23.1
Unit
Test Condition
(I
D
= 60 mA, unless otherw ise noted)
dB
dB Z
S
= 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
dB
dB Z
S
= 50 Ohms
dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm
dB m
dB
dB
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-100618 Rev B
Preliminary
Preliminary
SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier
Pin #
1
RF input pin. This pin requires the use of an
external DC blocking capacitor chosen for the
frequency of operation.
GND
Connection to ground. Use via holes for best
performance to reduce lead inductance.
Place vias as close to ground leads as
possible.
RF OUT/Vcc RF output and bias pin. Bias should be
supplied to this pin through an external series
resistor and RF choke inductor. Because DC
biasing is present on this pin, a DC blocking
capacitor should be used in most applications
(see application schematic). The supply side
of the bias network should be well bypassed.
GND
Same as Pin 2.
Function
RF IN
Description
Device Schematic
2
3
4
Application Schematic for Operation at 850 MHz
R ecommended B ias R esistor Values
Supply
Voltage(Vs)
R bias
(Ohms)
5V
25
7.5V
67
9V
92
12V
142
1uF
68pF
25 ohms
V
S
For 7.5V operation or higher, a resistor with a power
handling capability of 1/2W or greater is recommended.
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