DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD441000L-X
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
EXTENDED TEMPERATURE OPERATION
Description
The
µ
PD441000L-X is a high speed, low power, 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The
µ
PD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.
5
The
µ
PD441000L-X is packed in 32-pin plastic SOP and 32-pin plastic TSOP (I) (8
×
13.4 mm) and (8
×
20 mm).
Features
•
131,072 words by 8 bits organization
•
Fast access time : 70, 85, 100, 120, 150 ns (MAX.)
•
Low voltage operation
(B version : V
CC
= 2.7 to 3.6 V, C version : V
CC
= 2.2 to 3.6 V, D version : V
CC
= 1.8 to 3.6 V)
•
Low V
CC
data retention
(B version : 2.0 V (MIN.), C version, D version : 1.5 V (MIN.))
•
Operating ambient temperature : T
A
= –25 to +85 °C
•
Output Enable input for easy application
•
Two Chip Enable inputs : /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
−25
to +85
At operating
mA (MAX.)
25
Supply current
At standby
At data retention
µ
A (MAX.)
2
µ
A (MAX.)
2
Note
µ
PD441000L-BxxX
µ
PD441000L-CxxX
µ
PD441000L-DxxX
70, 85, 100
100, 120
120, 150
2.7 to 3.6
2.2 to 3.6
1.8 to 3.6
Note
0.5
µ
A (T
A
≤
40 °C)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M13714EJ5V0DSJ1 (5th edition)
Date Published December 2000 NS CP (K)
Printed in Japan
The mark
•
shows major revised points.
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1998
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