Final data
SPP03N60S5
SPB03N60S5
V
DS
R
DS(on)
I
D
P-TO263-3-2
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
Ultra low effective capacitances
•
Improved transconductance
600
1.4
3.2
V
Ω
A
P-TO220-3-1
Type
SPP03N60S5
SPB03N60S5
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4184
Q67040-S4197
Marking
03N60S5
03N60S5
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 2.4 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 3.2 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
V
GS
P
tot
T
j ,
T
stg
3.2
±20
±30
38
-55... +150
W
°C
A
V
0.2
I
D puls
E
AS
Symbol
I
D
3.2
2
5.7
100
mJ
Value
Unit
A
Page 1
2003-10-06
Final data
Maximum Ratings
Parameter
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 3.2 A,
T
j
= 125 °C
SPP03N60S5
SPB03N60S5
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
Electrical Characteristics,
at
Tj=25°C
unless otherwise specified
Parameter
Symbol
Conditions
min.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
Drain-Source avalanche
V
(BR)DS
V
GS
=0V,
I
D
=3.2A
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=135µΑ,
V
GS
=V
DS
V
DS
=600V,
V
GS
=0V,
T
j
=25°C,
T
j
=150°C
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
T
sold
-
-
-
Values
typ.
-
-
-
35
-
max.
3.3
62
62
-
260
Unit
K/W
°C
Values
typ.
-
700
4.5
0.5
-
-
1.26
3.4
max.
-
-
5.5
600
-
3.5
-
-
-
-
-
Unit
V
µA
1
70
100
1.4
-
nA
Ω
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=2A,
T
j
=25°C
T
j
=150°C
Drain-source on-state resistance
R
DS(on)
Page 2
2003-10-06
Final data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=350V,
I
D
=3.2A,
V
GS
=0 to 10V
V
DD
=350V,
I
D
=3.2A
SPP03N60S5
SPB03N60S5
Values
min.
typ.
1.8
420
150
3.6
35
25
40
15
22.5
-
max.
-
-
-
-
ns
S
pF
-
-
-
-
-
-
-
-
Unit
Symbol
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=2A
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=350V,
V
GS
=0/10V,
I
D
=3.2A,
R
G
=20Ω
-
-
-
-
3.5
7
12.4
8
-
-
16
-
nC
V
(plateau)
V
DD
=350V,
I
D
=3.2A
V
1Repetitve avalanche causes additional power losses that can be calculated as
P
=E
AR
*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow
Page 3
2003-10-06
Final data
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=I
S
V
R
=350V,
I
F
=I
S
,
di
F
/dt=100A/µs
SPP03N60S5
SPB03N60S5
Values
min.
typ.
-
-
1
1000
2.3
max.
3.2
5.7
1.2
1700
-
V
ns
µC
A
-
-
-
-
-
Unit
Symbol
I
S
I
SM
Conditions
T
C
=25°C
Typical Transient Thermal Characteristics
Symbol
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.054
0.103
0.178
0.757
0.682
0.202
K/W
Value
typ.
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.00005232
0.0002034
0.0002963
0.0009103
0.002084
0.024
Ws/K
Unit
Symbol
Value
typ.
Unit
T
j
P
tot
(t)
R
th1
R
th,n
T
case
E xternal H eatsink
C
th1
C
th2
C
th,n
T
am b
Page 4
2003-10-06
Final data
1 Power dissipation
P
tot
=
f
(T
C
)
40
SPP03N60S5
SPP03N60S5
SPB03N60S5
2 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
=25°C
10
1
W
A
32
28
10
0
P
tot
24
20
16
I
D
10
-1
12
8
4
0
0
10
-2 0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
20
40
60
80
100
120
°C
160
10
1
10
2
T
C
10
V
V
DS
3
3 Transient thermal impedance
Z
thJC
=
f
(t
p
)
parameter:
D
=
t
p
/T
10
1
4 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 10 µs,
V
GS
10
A
K/W
8
10V
20V
12V
Z
thJC
10
0
7
I
D
6
5
9V
8.5V
4
10
-1
3
2
1
10
-2 -5
10
-4
-3
-2
-1
0
8V
7.5V
7V
6.5V
10
10
10
10
s
10
0
0
5
10
15
V
V
DS
25
t
p
Page 5
2003-10-06
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