MDD255-12N1
Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 1200 V
=
=
270 A
1.08 V
Phase leg
Part number
MDD255-12N1
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
Y1
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
© 2019 IXYS all rights reserved
MDD255-12N1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
1300
V
1200
500
20
1.19
1.40
1.08
1.35
270
450
0.80
0.6
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
890
9.80
10.6
8.33
9.00
W
kA
kA
kA
kA
V
R
= 1200 V
V
R
= 1200 V
I
F
= 300 A
I
F
= 600 A
I
F
= 300 A
I
F
= 600 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.14 K/W
0.04
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
381
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
480.2 kA²s
466.1 kA²s
346.9 kA²s
336.6 kA²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
© 2019 IXYS all rights reserved
MDD255-12N1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y1
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
600
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
680
4.5
11
16.0
16.0
3600
3000
7
13
Production
Index (PI)
Date Code
(DC)
yywwAA
Circuit
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MDD255-12N1
Marking on Product
MDD255-12N1
Delivery Mode
Box
Quantity
3
Code No.
461873
Similar Part
MDD255-14N1
MDD255-16N1
MDD255-18N1
MDD255-20N1
Package
Y1-CU
Y1-CU
Y1-CU
Y1-CU
Voltage class
1400
1600
1800
2000
MDD255-22N1
Y1-CU
2200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150°C
V
0 max
R
0 max
0.8
0.4
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
© 2019 IXYS all rights reserved
MDD255-12N1
Outlines Y1
3x M8
15
±1
52
+0
-1,4
49
2
32
+0
-1,9
10
20
22.5
35
28.5
45 67
43
1
2
6.2
80
92
115
18
3
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
38
50
20191204j
MDD255-12N1
Rectifier
10000
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
10
6
V
R
= 0 V
500
DC
180 ° sin
120 °
60 °
30 °
8000
400
I
FAVM
I
2
t
[A s]
T
VJ
= 150°C
2
I
FSM
6000
300
T
VJ
= 45°C
[A]
200
[A]
4000
100
2000
0.01
0.1
1
10
5
1
10
0
0
25
50
75
100 125 150
t
[s]
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
500
2
t
[ms]
Fig. 2 I t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
600
R
thKA
K/W
400
P
tot
[W]
300
DC
180 ° sin
120 °
60 °
30 °
0.1
0.2
0.3
0.4
0.6
0.8
1.2
500
400
T
VJ
= 125°C
V
R
= 600 V
I
RM
300
200
[A]
200
100
0
0
I
F
= 400 A
100
0
0
100
200
300
400
0
25
50
75
100
125
150
50
100
150
200
I
FAVM
[A]
T
A
[°C]
di
F
/dt
[A/µs]
Fig. 5 Typ. peak reverse current
I
RM
versus -diF/dt
25
R
thKA
K/W
Fig. 4 Power dissipation vs. forward current & ambient temperature
(per diode)
1500
1250
R
L
1000
P
tot
750
0.06
0.08
0.1
0.15
0.2
0.3
0.5
T
VJ
= 125°C
V
R
= 600 V
20
t
rr
15
[µs]
10
I
F
= 400 A
[W]
500
250
0
0
100
200
300
Circuit
B2U
2 x MDD255
5
400
500
0
25
50
75
100
125
150
0
0
50
100
150
200
I
dAVM
[A]
T
A
[°C]
di
F
/dt
[A/µs]
Fig. 7 Typ. recovery time t
rr
versus -di
F
/dt
20191204j
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
& ambient temperature. R = resistive load, L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
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