（NON-ISOLATED
TYPE）
DIODE MODULE
DKR300AB60
DKR300AB60
is a high speed (fast recovery) dual diode module designed for high
power switching application.
DKR300AB60
is suitable for high frequency application
requiring low loss and high speed control.
●
High Speed Diode t
rr
≦200ns
●
IF
(AV)
=150A（each device）
●
Isolated Molded devices
●
High Surge Capability
（Applications）
Switching Power Supply, Inverter Welding Power Supply
Power Supply for Telecommunication
A
A
MARKING AREA
Tc point（depth 2mm）
９ ．± ．
２０ ０１
８ ．± ．
００ ０３
３ ．± ．
５０ ０２
２ ．± ．
００ ０１
２
−
５
．
４
６.５
K
Unit：㎜
■Maximum
Ratings
Symbol
V
RRM
V
R
（DC）
Symbol
I
F
I
FSM
I
2
t
Tj
Tstg
Forward
Current
Item
Repetitive peak reverse Voltage
D.C. Reverse Voltage
Item
Per module
Per leg
1
cycle,
／
2
1
cycle,
／
2
（Tj＝25℃
unless otherwise specified）
Ratings
DKR300AB60
600
480
Condition
D.C. T
C
＝124℃
60H
Z
, Peak value. non-repetitive
50H
Z
, Peak value. non-repetitive
Ratings
300
150
3600
3200
54000
−40 to ＋150
−40 to ＋125
Recommended Value 25-40
Recommended Value 2.5-3.9
Recommended Value 10-14
Recommended Value 1.0-1.4
Recommended Value 25-40
Recommended Value 2.5-3.9
Typical Value
48
4.7
15
1.5
48
4.7
80
Unit
V
V
Unit
A
A
A
2
S
℃
℃
（㎏f½B）
N½m
（㎏f½B）
N½m
（㎏f½B）
N½m
g
Surge Forward Current
I
2
t (for fusing)
Operating Junction Temperature
Storage Temperature
Mounting
（M6）
Mounting
Torque
Mounting
（M4）
Terminal
（M6）
Mass
Value for one cycle surge current
■Electrical
Characteristics
Symbol
I
RRM
V
FM
trr
Item
Repetitive Peak Reverse Current
Forward Voltage Drop
Reverse Recovery Time
Tj＝125℃, V
D
=V
RRM
I
F
＝300A,
Inst.measurement
I
F
＝300A，ーdi/dt＝300A/
μs
Junction to case,
1
module
／
2
Condition
Ratings
Min.
Typ. Max.
200
1.4
100
200
0.063
MAX ６
１
depth ８
mm
２ ６
−M
２．
６５
２．
６５
２ １．
− ２０
Unit
mA
V
ns
℃/W
Rth j-c）
Thermal Impedance
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DKR300AB60
１０
００
Reverse Recovery Time trr ns）
（
Reverse Recovery Charge Qrr
μC）
（
Reverse Recovery CurrentＩ （Ａ）
½
½
Forward Characteristics
１０
００
Reverse Recovery Characteristics
-di/dt= 00[A/μs]
３
Trr
Trr
Forward Current I（A）
F
１０
０
１０
０
Irr
１
０
Irr
Qrr
１
０
Max
Ｔ= ５
½２ ℃
１
Qrr
Ｔ= ５
½２ ℃
Ｔ= ５ ℃
½１ ０
１
０
０５
．
１
１５
．
２
２５
．
０１
．
０
１０
０
２０
０
3０
０
4０
０
５０
０
６０
０
Forward Voltage Drop V（V）
F
Forward Current I（A）
F
Transient Thermal Impedance
（℃/W）
1.0E
ー０
1.0E
ー１
Reverse Recovery Time trr ns）
（
Reverse Recovery Charge Qrr
μC）
（
Reverse Recovery CurrentＩ （Ａ）
½
½
Transient Thermal Impedance
１０
００
Reverse Recovery Characteristics
I
F
=
３00[A]
Trr
Trr
Irr
Irr
１０
０
1.0E
ー
２
１
０
Qrr
Qrr
1.0E
ー３
1.0E
ー４
1.0E
ー５ ー６
1.0E
Max.
Junction to Case
１
Ｔ= ５
½２ ℃
Ｔ =１ ０
½ ５℃
1.0E
ー５
1.0E
ー４
Time
t
sec.）
（
1.0E
ー３
1.0E
ー２
1.0E
ー１
1.0E
０
1.0E
１
０１
．
１
０
２
０
５
０
１０
０
２０
０
５０
０
１０
００
Critical rate of rise of on-state current di/dt
μ
s）
（A/
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com 6
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