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LDTC123ELT3G

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
产品类别分立半导体    晶体管   
文件大小265KB,共3页
制造商LRC
官网地址http://www.lrc.cn
标准
下载文档 详细参数 全文预览

LDTC123ELT3G概述

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,

LDTC123ELT3G规格参数

参数名称属性值
是否Rohs认证符合
包装说明,
Reach Compliance Codeunknown
最大集电极电流 (IC)0.1 A
最小直流电流增益 (hFE)20
元件数量1
极性/信道类型NPN
最大功率耗散 (Abs)0.15 W
表面贴装YES
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
3
LDTC123ELT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
2
SOT-23
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(Max.)
Pd
Tj
Tstg
Limits
50
−10
to
+12
100
100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTC123ELT1G
LDTC123ELT3G
Marking
A8H
A8H
R1 (K)
2.2
2.2
R2 (K)
2.2
2.2
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol Min.
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
3
20
1.54
0.8
Typ.
0.1
2.2
1
250
Max.
0.5
0.3
3.8
0.5
2.86
1.2
Unit
V
V
mA
µA
kΩ
MHz
Conditions
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=20mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=20mA
V
CE
=10V,
I
E
= −5mA,
f=100MHz
1/3

 
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