LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTC114YLT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
BASE
1
2
SOT-23
•
R1
R2
3
COLLECTOR
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
70
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTC114YLT1G
LDTC114YLT3G
Marking
A8D
A8D
R1 (K)
10
10
R2 (K)
47
47
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
−
1.4
−
−
−
68
7
3.7
−
−
−
0.1
−
−
−
10
4.7
250
0.3
−
0.3
0.88
0.5
−
13
5.7
−
V
V
mA
µA
−
kΩ
−
MHz
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=1mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=5mA
−
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
1/3
LESHAN RADIO COMPANY, LTD.
LDTC114YLT1G
Electrical characteristic curves
100
50
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
Ta=−40°C
25°C
100°C
V
O
=0.3V
OUTPUT CURRENT : Io
(A)
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Ta=100°C
25°C
−40°C
V
CC
=5V
INPUT VOLTAGE : V
I(on)
(V)
5m 10m 20m
50m 100m
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
DC CURRENT GAIN : G
I
V
O
=5V
Ta=100°C
25°C
−40°C
OUTPUT VOLTAGE : V
O(on)
(V)
1
500m
200m
100m
50m
20m
10m
5m
2m
500µ 1m
2m
5m 10m 20m
50m 100m
1m
100µ 200µ
500µ 1m
2m
Ta=100°C
25°C
−40°C
l
O
/l
I
=20
200
100
50
20
10
5
2
1
100µ 200µ
5m 10m 20m
50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
2/3
LESHAN RADIO COMPANY, LTD.
LDTC114YLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
D
H
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
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