LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTA114GLT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
2
SOT–23
•
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
1
BASE
3
COLLECTOR
R2
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTA114GLT1G
LDTA114GLT3G
Marking
Q1
Q1
R1 (K)
−
−
R2 (K)
10
10
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min. Typ.
Collector-base breakdown voltage
−
BV
CBO
−50
BV
CEO
−50
−
Collector-emitter breakdown voltage
BV
EBO
Emitter-base breakdown voltage
−5
−
−
−
Collector cutoff current
I
CBO
−300
I
EBO
−
Emitter cutoff current
V
CE(sat)
Collector-emitter saturation voltage
−
−
−
h
FE
30
DC current transfer ratio
10
R
2
Emitter-base resistance
7
f
T
−
250
Transition frequency
∗Transition
frequency of the device.
Max. Unit
Conditions
−
V I
C
= −50µA
−
V I
C
= −1mA
−
V I
E
= −720µA
−0.5 µA
V
CB
= −50V
−580 µA
V
EB
= −4V
−0.3
V I
C
= −10mA,
I
B
= −0.5mA
−
−
I
C
= −5mA,
V
CE
= −5V
−
13
kΩ
−
MHz V
CE
= −10V,
I
E
=50mA,
f=100MHz
∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTA114GLT1G
Electrical characteristic curves
Ta=25˚C
500 V
O
=5V
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : I
c
(mA)
Fig.1 DC Current gain
vs. Collector Current
COLLECTOR SATURATION VOLTAGE: V
CE
(sat)(mV)
1000
500
Ta=25˚C
200
100
50
I
C
/ I
B
=20
/ 1
I
C
/ I
B
=10
/ 1
20
10
1
2
5
10
20
50
100
COLLECTOR CURRENT : V
DS
(V)
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA114GLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
D
H
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
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