LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
•
•
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
LDTB113ELT1G
S-LDTB113ELT1G
3
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
We declare that the material of product compliance with
RoHS requirements.
•
S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
1
2
SOT–23
1
BASE
R1
R2
3
COLLECTOR
Symbol
V
CC
V
IN
I
C
P
D
Tj
Tstg
Limits
−50
−10
to
+10
−500
200
150
−55
to
+150
Unit
V
V
mA
mW
C
C
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTB113ELT1G
S-LDTB113ELT1G
LDTB113ELT3G
S-LDTB113ELT3G
Marking
K4
K4
R1 (K)
1
1
R2 (K)
1
1
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗
Characteristics of built-in transistor
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
∗
Min.
−
−3
−
−
−
33
0.7
0.8
−
Typ.
−
−
−0.1
−
−
−
1
1
200
Max.
−0.5
−
−0.3
−7.2
−0.5
−
1.3
1.2
−
Unit
V
V
V
mA
µA
−
kΩ
−
MHz
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−20mA
I
O
/I
I
=
−50mA/−2.5mA
V
I
=
−5V
V
CC
=
−50V,
V
I
= 0V
V
O
=
−5V,
I
O
=
−50mA
−
−
V
CE
=
−10V,
I
E
= 50mA, f= 100MHz
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTB113ELT1G ;S-LDTB113ELT1G
Electrical characteristic curves
-100
-50
INPUT VOLTAGE : V
I(on)
(
V)
V
O
=
−0.3V
OUTPUT CURRENT : Io (
A)
-10m
-5m
-2m
V
CC
=
−5V
Ta=100 C
25 C
−40
C
-20
-10
-5
-2
-1
-500m
-200m
Ta=−40 C
25 C
100 C
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0
-100m
-500µ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
-0.5
-1.0
-1.5
-2.0
(off)
-2.5
(
V
)
-3.0
OUTPUT CURRENT : I
O
(
A)
INPUT VOLTAGE : V
I
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
V
O
=
−5V
-1
l
O
/l
I
=20
Ta=100 C
25 C
−40
C
DC CURRENT GAIN : G
I
OUTPUT VOLTAGE : V
O
100
50
20
10
5
2
(on)
200
Ta=100 C
25 C
−40
C
(
V
)
-5m -10m -20m -50m-100m-200m -500m
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-500µ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
1
-500µ -1m -2m
OUTPUT CURRENT : I
O
(
A
)
OUTPUT CURRENT : I
O
(
A
)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTB113ELT1G ;S-LDTB113ELT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
D
H
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
嵌入式系统
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