PRELIMINARY DATA SHEET
RECEIVER
NR3313TQ
InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER
FOR 10 Gb/s APPLICATIONS
DESCRIPTION
The NR3313TQ products consist of InGaAs PIN ROSAs (Receiver Optical
Sub-Assembly) with internal pre-amplifiers designed for 10 Gb/s optical
transceivers such as the XFP/SFP+. These modules are ideal as receivers
for IEEE 10G BASE and SONET OC-192 systems.
FEATURES
• XMD-MSA compliant ROSA
• 10 Gb/s high sensitivity InGaAs PIN-PD
• +3.3 V transimpedance pre-amplifier
• Minimum receiver sensitivity
• Operating case temperature
• Transimpedance
• Cut-off frequency
• With flexible printed circuit
P
r
=
−20
dBm
T
C
=
−20
to +95°C
Z
t
= 6 000
Ω
(Single-ended)
fc = 8.5 GHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10775EJ01V0DS (1st edition)
Date Published August 2009 NS
Printed in Japan
2009
NR3313TQ
ORDERING INFORMATION
Part Number
NR3313TQ
Receptacle Type
LC, Isolated
Note
Differential output with flexible PCB
ABSOLUTE MAXIMUM RATINGS
Parameter
PIN-PD Reverse Voltage
PIN-PD Reverse Current
IC Supply Voltage
Operating Case Temperature
Storage Temperature
Maximum AOP Input
(ER
<
5.4 dB (1.1 A/W))
Lead Soldering Temperature
(Flexible Printed Circuit)
T
sld
260 (10 sec.)
°C
Symbol
V
R
I
R
V
CC
T
C
T
stg
P
in
Ratings
10
10
−0.3
to +4
−20
to +95
−40
to +85
+5
Unit
V
mA
V
°C
°C
dBm
RECOMMENDED OPERATING CONDITION
Parameter
PIN-PD Reverse Voltage
IC Supply Voltage
Operating Case Temperature
Symbol
V
R
V
CC
T
C
MIN.
2.8
+2.97
−20
TYP.
3.3
+3.3
+25
MAX.
3.5
+3.5
+95
Unit
V
V
°C
ELECTRO-OPTICAL CHARACTERISTICS (λ = 1 310 nm/1 550 nm, unless otherwise specified)
Parameter
Sensitivity
Transimpedance
Symbol
S
Z
t
R
L
= 50
Ω,
P
in
=
−20
dBm,
Single-ended
Maximum Output Voltage Swing
Cut-off Frequency
V
clip
f
C
Single-ended
R
L
= 50
Ω,
P
in
=
−17
dBm,
−3
dB from 1 GHz
Minimum Receiver Sensitivity
Overload
IC Supply Current
Optical Return Loss
P
r
P
O
I
CC
ORL
9.95 Gb/s, BER = 10
−
,
12
Conditions
MIN.
0.75
3 000
TYP.
MAX.
1.2
Unit
A/W
Ω
6 000
10 000
350
6.5
8.5
−20
+1
+3
50
−27
−17
mV
pp
GHz
dBm
dBm
mA
dB
PRBS = 2
−1,
ER > 10 dB, NRZ,
31
λ
= 1 550 nm
V
CC
= 3.5 V
4
Preliminary Data Sheet PL10775EJ01V0DS
NR3313TQ
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet
*1
Document No.
PX10160E
*1
Published by the former NEC Compound Semiconductor Devices, Ltd.
Preliminary Data Sheet PL10775EJ01V0DS
5