NJU7098
Auto-Zero, High Precision Single Operational Amplifier
■GENERAL
DESCRIPTION
The NJU7098 is Auto Zero high precision operational amplifiers
available in the SOT23-5 packages. The NJU7098 operates from a single
3V to 10V supply. The NJU7098 of CMOS operational amplifier use Auto
Zero techniques to simultaneously provide very low offset voltage, and
near-zero drift over temperature (0.05µV/ºC Max.).
The NJU7098 includes a shutdown mode. Under logic control, the
amplifiers can be switched from normal operation to a standby. When the
SHDN pin is connected high, the amplifier is active. Connecting SHDN
low disables the amplifier.
■FEATURES
●Low
Offset Voltage Drift
●Low
Offset Voltage
●Operating
Voltage
●High
Voltage Gain
●CMR,
SVR
●Operating
Current
●Output
Full-Swing (R
L
=10kΩ)
●Shutdown
●Ground
Sensing
●Package
Outline
■PACKAGE
OUTLINE
NJU7098F1
0.05µV/ºC max.
15µV max.
+3V to +10V
140dB typ.
130dB typ.
0.6mA typ. (at V
DD
=+5V)
SOT-23-6 (MTP6)
■APPLICATIONS
●Thermocouple
/ Thermopile Amplifiers
●Strain
Gauge / Pressure sensor Amplifiers
●Load
Cell and Bridge Transducer Amplifiers
●High
Resolution Data Acquisition
●Precision
Current Sensing
■
PIN CONFIGURATION
■TYPICAL
CHARACTERISTICS
Input Offset Voltage vs. Temperature
6
4
Input Offset Voltage [µV]
2
V
DD
/V
SS
=±5V
V
ICM
=0V
1
2
3
NJU7098F1
(Top View)
+ -
6
5
4
PIN FUNCTION
1. OUTPUT
2. V
SS
3. +INPUT
4. –INPUT
5. SHDN
6. V
DD
0
-2
-4
V
DD
/V
SS
=±2.5V
V
DD
/V
SS
=±1.5V
-6
-8
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
Ver.2008-05-16
-1-
NJU7098
■
ABSOLUTE MAXIMUM RATINGS
(Ta=25˚C)
PARAMETER
Supply Voltage
Common Mode Input Voltage Range
Differential Input Voltage Range
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
DD
V
ICM
V
ID
P
D
T
opr
T
st g
RATINGS
11
-0.3 to V
DD
+0.3
±11(Note 1)
200 [MTP6]
410 [MTP6] (Note 2)
-40 to +85
-40 to +125
UNIT
V
V
V
mW
ºC
ºC
(Note 1) For supply voltage less than 11V, the absolute maximum input voltage is equal to the supply voltage.
(Note 2) On the PCB " EIA/JEDEC (76.2x11.43x1.6mm, two layers, FR-4) "
(Note 3) Do not exceed "Power dissipation: P
D
" in which power dissipation in IC is shown by the absolute maximum rating.
Refer to following Figure 1 for a permissible loss when ambient temperature (Ta) is Ta≥25ºC .
Figure 1: Power Dissipation – Ambient Temperature
Package Type
400
(2)
(1)MTP6
:
∆P
D
= -2.0(mW/°C)
(2)MTP6[2 Layer] :
∆P
D
= -4.1(mW/°C)
Power Dissipation P
D
(mW)
300
200
(1)
100
0
0
25
50
75
100
Ambient Temperature Ta (
o
C)
■
OPERATING VOLTAGE
(Ta=-40 to +85
ºC
)
PARAMETER
Supply Voltage
SYMBOL
V
DD
RATINGS
3 to 10
UNIT
V
-2-
Ver.2008-05-16
NJU7098
■
ELECTORIC CHARACTERISTICS
●
DC CHARACTERISTICS (V
DD
=+3V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= -40~85
ºC
unless otherwise specified)
PARAMETER
Supply Current
Input Offset Voltage1
Input Offset Voltage2
Input Offset Voltage Drift
Input Bias Current1
Input Bias Current2
Input Offset Curret1
Input Offset Current2
Voltage Gain1
Voltage Gain2
Input Common Mode Voltage Range
Common Mode Rejection Ratio1
Common Mode Rejection Ratio2
Supply Voltage Rejection Ratio1
Supply Voltage Rejection Ratio2
Maximum Output Voltage1
Maximum Output Voltage2
Output Source Current
Output Sink Current
SYMBOL
I
DD
V
IO
1
V
IO
2
V
IO
/∆t
I
B
1
I
B
2
I
IO
1
I
IO
2
A
V
1
A
V
2
V
ICM
CMR1
CMR2
SVR1
SVR2
V
OH
1
V
OL
1
V
OH
2
V
OL
2
I
SO URCE
I
SI NK
TEST CONDITION
R
L
=∞, No Signal
Ta=25ºC
MIN
-
-
-
-
-
-
TYP
0.55
3
3
-
15
-
MAX
1.1
15
15
0.05
50
100
100
200
-
-
1.7
UNIT
mA
µV
µV
µV/
o
C
pA
pA
pA
pA
dB
dB
V
dB
dB
-
-
-
10
-
10
-
-
dB
dB
V
mV
V
mV
mA
mA
Ta=25ºC
Ta=25ºC
R
L
≥10kΩ,
V
o
=0.35~2.65V, Ta=25ºC
R
L
≥10kΩ,
V
o
=0.35~2.65V
CMR≥110dB
V
ICM
=0~1.7V, Ta=25ºC
V
ICM
=0~1.7V
V
DD
=3~10V, Ta=25ºC
V
DD
=3~10V
R
L
=2kΩ to GND
R
L
=2kΩ to GND
R
L
=10kΩ to GND
R
L
=10kΩ to GND
V
O
=2.5V
V
O
=0.5V
120
115
0
110
110
110
110
2.85
-
2.95
-
5
3
140
140
-
130
130
130
130
2.94
1
2.98
1
20
25
●
AC CHARACTERISTICS (V
DD
=+3V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= +25
ºC
unless otherwise specified)
PARAMETER
Gain Bandwidth Product
Phase Margin
Equivalent Input Noise Voltage
Internal Sampling Frequency
SYMBOL
GB
Φ
M
V
NI
F
S
TEST CONDITION
R
L
=10kΩ
R
L
=10kΩ, C
L
=50pF
f=10Hz
MIN
-
-
-
-
TYP
2
30
120
7.5
MAX
-
-
-
-
UNIT
MHz
deg
nV/√Hz
kHz
●
TRANSIENT CHARACTERISTICS (V
DD
=+3V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= +25
ºC
unless otherwise specified)
PARAMETER
Positive Slew Rate
Negative Slew Rate
SYMBOL
+SR
−SR
TEST CONDITION
A
V
=1, V
I N
=1V
P -P
,
R
L
=10kΩ
A
V
=1, V
I N
=1V
P -P
,
R
L
=10kΩ
MIN
-
-
TYP
3
8
MAX
-
-
UNIT
V/µs
V/µs
●
SHUTDOWN CHARACTERISTICS
(V
DD
=+3V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= -40~85
ºC
unless otherwise specified)
PARAMETER
Shutdown Supply Current
Turn On Voltage to Enable Part
Turn off Voltage to Disable Part
Shutdown Bias Current
SYMBOL
I
DDS HDN
V
SHDNO N
V
SHDNO FF
I
S HDN
TEST CONDITION
R
L
=∞, V
SHDN
=GND,
No Signal
I
DD
≥300µA
I
DD
≤10µA
V
SHDN
=GND
MIN
-
2.5
GND
-
TYP
-
-
-
0.5
MAX
10
3
0.5
3.0
UNIT
µA
V
V
µA
Ver.2008-05-16
-3-
NJU7098
■
ELECTORIC CHARACTERISTICS
●
DC CARACTERISTICS (V
DD
=+5V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= -40~85
ºC
unless otherwise specified)
PARAMETER
Supply Current
Input Offset Voltage1
Input Offset Voltage2
Input Offset Voltage Drift
Input Bias Current1
Input Bias Current2
Input Offset Curret1
Input Offset Current2
Voltage Gain1
Voltage Gain2
Input Common Mode Voltage Range
Common Mode Rejection Ratio1
Common Mode Rejection Ratio2
Supply Voltage Rejection Ratio1
Supply Voltage Rejection Ratio2
Maximum Output Voltage1
Maximum Output Voltage2
Output Source Current
Output Sink Current
SYMBOL
I
DD
V
IO
1
V
IO
2
V
IO
/∆t
I
B
1
I
B
2
I
IO
1
I
IO
2
A
V
1
A
V
2
V
ICM
CMR1
CMR2
SVR1
SVR2
V
OH
1
V
OL
1
V
OH
2
V
OL
2
I
SO URCE
I
SI NK
TEST CONDITION
R
L
=∞, No signal
Ta=25ºC
MIN
-
-
-
-
-
-
TYP
0.6
3
3
-
20
-
MAX
1.2
15
15
0.05
50
100
100
200
-
-
3.5
UNIT
mA
µV
µV
µV/
o
C
pA
pA
pA
pA
dB
dB
V
dB
dB
-
-
-
10
-
10
-
-
dB
dB
V
mV
V
mV
mA
mA
Ta=25ºC
Ta=25ºC
R
L
≥10kΩ,
V
o
=1~4V, Ta=25ºC
R
L
≥10kΩ,
V
o
=1~4V
CMR≥115dB
V
ICM
=0~3.5V, Ta=25ºC
V
ICM
=0~3.5V
V
DD
=4~10V, Ta=25ºC
V
DD
=4~10V
R
L
=2kΩ to GND
R
L
=2kΩ to GND
R
L
=10kΩ to GND
R
L
=10kΩ to GND
V
O
=4.5V
V
O
=0.5V
125
120
0
120
115
115
115
4.85
-
4.95
-
10
4
140
140
-
130
130
130
130
4.94
1
4.98
1
30
40
AC CHARACTERISTICS (V
DD
=+5V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= +25
ºC
unless otherwise specified)
PARAMETER
Gain Bandwidth Product
Phase Margin
Equivalent Input Noise Voltage
Internal Sampling Frequency
SYMBOL
GB
Φ
M
V
NI
F
S
TEST CONDITION
R
L
=10kΩ
R
L
=10kΩ, C
L
=50pF
f=10Hz
MIN
-
-
-
-
TYP
3
30
120
7.5
MAX
-
-
-
-
UNIT
MHz
deg
nV/√Hz
kHz
●
TRANSIENT CHARACTERISTICS (V
DD
=+5V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= +25
ºC
unless otherwise specified)
PARAMETER
Positive Slew Rate
Negative Slew Rate
SYMBOL
+SR
−SR
TEST CONDITION
A
V
=1, V
I N
=2V
P -P
,
R
L
=10kΩ
A
V
=1, V
I N
=2V
P -P
,
R
L
=10kΩ
MIN
-
-
TYP
3
12
MAX
-
-
UNIT
V/µs
V/µs
●
SHUTDOWN CHARACTERISTICS
(V
DD
=+5V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= -40~85
ºC
unless otherwise specified)
PARAMETER
Shutdown Supply Current
Turn On Voltage to Enable Part
Turn off Voltage to Disable Part
Shutdown Bias Current
SYMBOL
I
DDS HDN
V
SHDNO N
V
SHDNO FF
I
S HDN
TEST CONDITION
R
L
=∞, V
SHDN
=GND,
No Signal
I
DD
≥300µA
I
DD
≤15µA
V
SHDN
=GND
MIN
-
4.5
GND
-
TYP
-
-
-
2.0
MAX
15
5
0.5
7.0
UNIT
µA
V
V
µA
-4-
Ver.2008-05-16
NJU7098
■
ELECTORIC CHARACTERISTICS
●
DC CHARACTERISTICS (V
DD
=+10V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= -40~85
ºC
unless otherwise specified)
PARAMETER
Supply Current
Input Offset Voltage1
Input Offset Voltage2
Input Offset Voltage Drift
Input Bias Current1
Input Bias Current2
Input Offset Curret1
Input Offset Current2
Voltage Gain1
Voltage Gain2
Input Common Mode Voltage Range
Common Mode Rejection Ratio1
Common Mode Rejection Ratio2
Supply Voltage Rejection Ratio1
Supply Voltage Rejection Ratio2
Maximum Output Voltage1
Maximum Output Voltage2
Output Source Current
Output Sink Current
SYMBOL
I
DD
V
IO
1
V
IO
2
V
IO
/∆t
I
B
1
I
B
2
I
IO
1
I
IO
2
A
V
1
A
V
2
V
ICM
CMR1
CMR2
SVR1
SVR2
V
OH
1
V
OL
1
V
OH
2
V
OL
2
I
SO URCE
I
SI NK
TEST CONDITION
R
L
=∞, No Signal
Ta=25ºC
MIN
-
-
-
-
-
-
TYP
0.7
3
3
-
40
-
MAX
1.5
15
15
0.05
200
200
400
400
-
-
8.5
UNIT
mA
µV
µV
µV/
o
C
pA
pA
pA
pA
dB
dB
V
dB
dB
-
-
-
10
-
10
-
-
dB
dB
V
mV
V
mV
mA
mA
Ta=25ºC
Ta=25ºC
R
L
≥10kΩ,
V
o
=1~9V, Ta=25ºC
R
L
≥10kΩ,
V
o
=1~9V
CMR≥115dB
V
ICM
=0~8.5V, Ta=25ºC
V
ICM
=0~8.5V
V
DD
=4~10V, Ta=25ºC
V
DD
=4~10V
R
L
=2kΩ to GND
R
L
=2kΩ to GND
R
L
=10kΩ to GND
R
L
=10kΩ to GND
V
O
=9.5V
V
O
=0.5V
125
120
0
120
115
115
115
9.5
-
9.6
-
14
5
140
140
-
130
130
130
130
9.94
1
9.98
1
40
60
●
AC CHARACTERISTICS (V
DD
=+10V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= +25
ºC
unless otherwise specified)
PARAMETER
Gain Bandwidth Product
Phase Margin
Equivalent Input Noise Voltage
Internal Sampling Frequency
SYMBOL
GB
Φ
M
V
NI
F
S
TEST CONDITION
R
L
=10kΩ
R
L
=10kΩ, C
L
=50pF
f=10Hz
MIN
-
-
-
-
TYP
2
30
120
7.5
MAX
-
-
-
-
UNIT
MHz
deg
nV/√Hz
kHz
●
TRANSIENT CHARACTERISTICS (V
DD
=+10V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= +25
ºC
unless otherwise specified)
PARAMETER
Positive Slew Rate
Negative Slew Rate
SYMBOL
+SR
−SR
TEST CONDITION
A
V
=1, V
I N
=2V
P -P
,
R
L
=10kΩ
A
V
=1, V
I N
=2V
P -P
,
R
L
=10kΩ
MIN
-
-
TYP
4
14
MAX
-
-
UNIT
V/µs
V/µs
●
SHUTDOWN CHARACTERISTICS
(V
DD
=+10V, V
SS
=GND, V
COM
= V
DD
/2, V
SHDN
= V
DD
, Ta= -40~85
ºC
unless otherwise specified)
PARAMETER
Shutdown Supply Current
Turn On Voltage to Enable Part
Turn off Voltage to Disable Part
Shutdown Bias Current
SYMBOL
I
DDS HDN
V
SHDNO N
V
SHDNO FF
I
S HDN
TEST CONDITION
R
L
=∞, V
SHDN
=GND,
No Signal
I
DD
≥400µA
I
DD
≤25µA
V
SHDN
=GND
MIN
-
9.5
GND
-
TYP
-
-
-
7.5
MAX
25
10
0.5
20
UNIT
µA
V
V
µA
Ver.2008-05-16
-5-
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