NJM2718
Single-Supply High-Operating voltage
Dual Operational Amplifier
■
GENERAL DESCRIPTION
The NJM2718 is a single-supply high voltage dual operational
amplifier. It is suitable for high supply voltage applications.
Large-capacitance drive capability is better or equal than
competing products.
■
FEATURES
●Single
Supply
●Operating
Voltage
●Input
Offset Voltage
●Large
Capacitance Drive Capability
●Output
Voltage
●Slew
Rate
●Bipolar
Technology
●Package
Outline
■
APPLICATION
●Low-Side
Current Sense
●PWM
Motor Control System
●Power
Supply Module
●Line
Driver, ADC/DAC Buffer
■
PIN CONFIGURATION
( Top View )
A OUTPUT
A -INPUT
A +INPUT
V
-
■PACKAGE
OUTLINE
NJM2718E
NJM2718V
3V~36V
4mV max.
1000pF typ.
V
OH
≥+13.5V,
V
OL
≤-14.0V
( at V
+
/V
-
= ±15V, R
L
=2kΩ)
V
OH
≥+3.7V,
V
OL
≤0.3V
( at V
+
=+5V, R
L
=2kΩ)
3.5V/µs typ. ( at Vin = 1Vpp, R
L
=2kΩ)
9V/µs typ. ( at Vin = 20Vpp, R
L
=2kΩ)
EMP8, SSOP8
1
2
3
4
- +
+ -
8
7
6
5
V
+
B OUTPUT
B -INPUT
B +INPUT
EMP8 [NJM2718E]
SSOP8 [NJM2718V]
Ver.2008-04-21
-1-
NJM2718
■
ABSOLUTE MAXIMUM RATINGS
(Ta=25˚C)
PARAMETER
Supply Voltage
Common Mode Input Voltage Range
Differential Input Voltage Range
Output Voltage
Output Sink/Source Current
for Each one Output Terminal
Flow in Current for V
+
terminal
Flow out Current for V
-
terminal
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
V
ICM
V
ID
V
O
I
OPORT
I
IV+
I
OV-
P
D
T
opr
T
st g
+
-
RATINGS
+40
V -0.3V to V
+
+0.3V
±40
-
V -0.3V to V
+
+0.3V (Note1)
±80 (Note3)
90 (Note3)
90 (Note3)
300 [EMP8], 250[SSOP8]
500[EMP8] (Note2)
350[SSOP8] (Note2)
-40 to +85
-50 to +125
UNIT
V
V
V
V
mA
mA
mA
mW
mW
mW
˚C
˚C
(Note 1) The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics.
(Note 2) On the PCB " EIA/JEDEC (76.2x114.3x1.6mm, two layers, FR-4) "
(Note 3) Do not exceed "Power dissipation: PD" in which power dissipation in IC is shown by the absolute maximum rating.
Refer to following Figure 1 for a permissible loss when ambient temperature (Ta) is Ta≥25
o
C.
Package Type
500
(2)
(1)EMP8
:
∆P
D
= -3.0(mW/°C)
(2)EMP8[Tw o Layer] :
∆P
D
= -5.0(mW/°C)
(3)SSOP8
:
∆PD=
-2.5(mW/°C)
(4)SSOP8[Tw o Layer] :
∆PD=
-3.5(mW/°C)
400
Power Dissipation P
D
(mW)
(4)
(1)
(3)
300
200
100
0
0
25
50
75
100
Ambient Temperature Ta (°C)
Figure1: Power Dissipation – Ambient Temperature
■
OPERATING VOLTAGE
(Ta=25˚C)
PARAMETER
Supply Voltage
SYMBOL
V
+
TEST CONDITION
(Note3)
MIN.
+3
TYP.
-
MAX.
+36
UNIT
V
-2-
Ver.2008-04-21
NJM2718
■
ELECTRICAL CHARACTERISTICS
●DC
CHARACTERISTICS (V
+
/V
−
=±15V
,
Ta=25˚C)
PARAMETER
Supply Current
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage 1
Maximum Output Voltage 2
Output Source Current
Output Sink Current
Common Mode Input Voltage
SYMBOL
Icc
V
IO
∆Vio/∆T
I
B
I
IO
Av
CMR
SVR
V
OH
1
V
OL
1
V
OH
2
V
OL
2
I source
Isink
V
ICM
TEST CONDITION
No Signal
Rs=50Ω
Rs=50Ω
Rs=50Ω
Rs=50Ω
R
L
≥2kΩ,
Vo=±10V, Rs=50Ω
-15V≤ V
ICM
≤+13V,
Rs=50Ω
±1.5V≤ V
+
/V
-
≤±18V,
Rs=50Ω
R
L
=10kΩ to 0V
R
L
=10kΩ to 0V
R
L
=2kΩ to 0V
R
L
=2kΩ to 0V
Vin+=+1V, Vin-=0V, Vo=0V
Vin+=0V, Vin-=+1V, Vo=0V
CMR≥70dB
MIN.
-
-
-
-
-
88
70
70
+13.7
-
+13.5
-
10
20
-15
TYP.
3.7
1
10
1.2
0.1
100
83
100
+14
-14.6
+14.0
-13.9
30
30
-
MAX.
5.3
4
-
4
1.8
-
-
-
-
-14.2
-
-13.5
-
-
+13
UNIT
mA
mV
µV/deg
µA
µA
dB
dB
dB
V
V
V
V
mA
mA
V
●AC
CHARACTERISTICS (V
+
/V
−
=±15V
,
Ta=25˚C)
PARAMETER
Gain Bandwidth Product
Power Band1
Power Band2
Phase Margin
Gain Margin
Equivalent Input Noise Voltage
Total Harmonic Distortion
Input Capacitance
Channel Separation
SYMBOL
GBW
PBW1
PBW2
φM1
φM2
AM1
AM2
V
NI
THD
ci
CT
TEST CONDITION
f=100kHz
Gv=+1, R
L
=2kΩ to 0V,
Vo=20Vpp, THD=1%
Gv=+1, R
L
=2kΩ to 0V,
Vo=2Vpp, THD=1%
R
L
=2kΩ to 0V, C
L
=0pF
R
L
=2kΩ to 0V, C
L
=300pF
R
L
=2kΩ to 0V, C
L
=0pF
R
L
=2kΩ to 0V, C
L
=300pF
Rs=50Ω, f=1kHz
Gv=+10, R
L
=2kΩ to 0V
Vo=20Vpp, f=10kHz
V
ICM
=0V, f=1MHz, Vinpower=0dBm
f=20~20kHz, R
L
=2kΩ
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.8
80
800
85
75
18
11
24
0.03
4.5
120
MAX.
-
-
-
-
-
-
-
-
-
-
-
UNIT
MHz
kHz
kHz
deg
deg
dB
dB
nV/√Hz
%
pF
dB
●TRANSIENT
CHARACTERISTICS (V
+
/V
−
=±15V
,
Ta=25˚C)
PARAMETER
SYMBOL
SR1
P
Slew Rate 1
SR1
N
SR2
P
Slew Rate 2
SR2
N
Settling time(0.1%)
Settling time(0.01%)
ts1
ts2
TEST CONDITION
Vin=1Vpp (-0.5V to +0.5V),
Gv=+1, R
L
=2kΩ to 0V, C
L
=500pF
Vin=1Vpp (-0.5V to +0.5V),
Gv=-1, R
L
=2kΩ to 0V, C
L
=500pF
Vin=20Vpp (-10V to +10V),
Gv=+1, R
L
=2kΩ to 0V, C
L
=500pF
Vin=20Vpp (-10V to +10V),
Gv=-1, R
L
=2kΩ to 0V, C
L
=500pF
Vin=10Vpp, Gv=-1, Rin=1kΩ,
Rf=1kΩ, Rg=5kΩ, C
L
=470pF
MIN.
-
-
-
-
-
-
TYP.
3.5
3.5
9
9
0.9
1.9
MAX.
-
-
-
-
-
-
UNIT
V/µs
V/µs
V/µs
V/µs
µs
µs
Ver.2008-04-21
-3-
NJM2718
■
ELECTRICAL CHARACTERISTICS
●DC
CHARACTERISTICS (V
+
=+5V
, V
−
=0V,
Ta=25˚C)
PARAMETER
Supply Current
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Voltage Gain
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Maximum Output Voltage 1
Output Source Current
Output Sink Current
Common Mode Input Voltage
SYMBOL
Icc
V
IO
∆Vio/∆T
I
B
I
IO
Av
CMR
SVR
V
OH
1
V
OL
1
Isource
Isink
V
ICM
TEST CONDITION
No Signal
Rs=50Ω
Rs=50Ω
Rs=50Ω
Rs=50Ω
R
L
≥2kΩ,
Vo=1.5V to 3.5V, Rs=50Ω
0V≤ V
ICM
≤3V,
Rs=50Ω
±1.5V≤ V
+
/V
-
≤±2.5V,
Rs=50Ω
R
L
=2kΩ to 0V
R
L
=2kΩ to 0V
Vin+=+1V, Vin-=0V, Vo=+2.5V
Vin+=0V, Vin-=+1V, Vo=+2.5V
CMR≥65dB
MIN.
-
-
-
-
-
80
65
70
3.7
-
10
20
0
TYP.
2.8
1
10
1
0.1
100
80
85
4
0.1
20
30
-
MAX.
3.5
4
-
4
1.8
-
-
-
-
0.2
-
-
3
UNIT
mA
mV
µV/deg
µA
µA
dB
dB
dB
V
V
mA
mA
V
●AC
CHARACTERISTICS (V
+
=+5V
, V
−
=0V,
Ta=25˚C)
PARAMETER
Gain Bandwidth Product
Power Band1
Phase Margin
Gain Margin
Equivalent Input Noise Voltage
Total Harmonic Distortion
Input Capacitance
Channel Separation
SYMBOL
GBW
PBW1
φM1
φM2
AM1
AM2
V
NI
THD
ci
CT
TEST CONDITION
f=100kHz
Gv=+1, R
L
=2kΩ to 2.5V,
Vo=2Vpp, THD=1%
R
L
=2kΩ to 2.5V, C
L
=0pF
R
L
=2kΩ to 2.5V, C
L
=300pF
R
L
=2kΩ to 2.5V, C
L
=0pF
R
L
=2kΩ to 2.5V, C
L
=300pF
Rs=50Ω, f=1kHz
Gv=+10, R
L
=2kΩ to 2.5V,
Vo=3Vpp, f=10kHz
Vcm=0V, f=1MHz, Vinpower=0dBm
f=10kHz
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
1.7
600
75
70
17
11
24
0.05
5
110
MAX.
-
-
-
-
-
-
-
-
-
-
UNIT
MHz
kHz
deg
deg
dB
dB
nV/√Hz
%
pF
dB
●TRANSIENT
CHARACTERISTICS (V
+
=+5V
, V
−
=0V,
Ta=25˚C)
PARAMETER
SYMBOL
SR1
P
Slew Rate 1
SR1
N
Settling time(0.1%)
Settling time(0.01%)
ts1
ts2
TEST CONDITION
Vin=1Vpp (+2V to +3V),
Gv=+1, R
L
=2kΩ to 0V, C
L
=500pF
Vin=1Vpp (+2V to +3V),
Gv=-1, R
L
=2kΩ to 0V, C
L
=500pF
Vin=1Vpp, Gv=-1, Rin=1kΩ, Rf=1kΩ,
Rg=5kΩ, C
L
=470pF
MIN.
-
-
-
-
TYP.
3
2.5
1.5
3
MAX.
-
-
-
-
UNIT
V/µs
V/µs
µs
µs
-4-
Ver.2008-04-21
NJM2718
■
TYPICAL CHARACTERISTICS
Supply Current vs. Supply Voltage
(Temperature)
5.0
4.5
4.0
Supply Current [mA]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
Supply Voltage [±V]
20
Ta=85ºC
Ta=-40ºC
V
IN
=0, R
S
=50Ω
Supply Current vs. Temperature
(supply Voltage)
5.0
4.5
4.0
Supply Current [mA]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
V
+
/V
-
=±2.5V
V
+
/V
-
=+2.5/-0.5V
V /V =±15V
+
-
V
IN
=0, R
S
=50Ω
Ta=+25ºC
Input Offset Voltage vs. Temperature
5.0
4.0
Input Offset Voltage [mV]
3.0
2.0
1.0
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
V
+
/V
-
=±15V, V
ICM
=0V, n=30
MIN =0.26uV/ºC
MAX=9.42uV/ºC
AVE=3.58uV/ºC
Input Offset Voltage vs. Temperature
5.0
4.0
Input Offset Voltage [mV]
3.0
2.0
1.0
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
V
+
/V
-
=±2.5V, V
ICM
=0V, n=30
MIN =1.12uV/ºC
MAX=9.93uV/ºC
AVE=4.39uV/ºC
Input Bias Current vs. Temperature
(Supply Voltage)
2.0
1.5
1.0
0.5
0.0
V /V =+2.0/-1.0V
+
-
+
-
Input Offset Current vs. Temperature
(Supply Voltage)
500
400
Input Offset Current [nA]
300
200
100
0
-100
-200
-300
-400
-500
V
+
/V
-
=±15V
V
+
/V
-
=+2.0/-1.0V
V
+
/V
-
=±2.5V
V
IN
=0V, R
S
=50Ω
V
IN
=0V, R
S
=50Ω
Input Bias Current [µA]
V /V =±2.5V
-0.5
-1.0
-1.5
-2.0
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
V
+
/V
-
=±15V
-50
-25
0
25
50
75
100
Ambient Temperature [ºC]
125
Ver.2008-04-21
-5-
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
