NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V, 1.5
W
Features
•
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
DSS
500 V
R
DS(on)
(MAX) @ 2.2 A
1.5
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
Continuous Drain Current
R
qJC
, T
A
= 100°C
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I
D
=
5.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H.
≤
30%, T
A
= 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
MOSFET dV/dt
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
dV/dt
dV/dt
I
S
T
L
T
J
, T
stg
NDF
500
5.5
(Note 1)
3.5
(Note 1)
20
30
±30
130
3000
4500
4.5
60
5
260
−55
to 150
4.7
3
19
83
NDD
Unit
V
A
A
A
W
V
mJ
V
V
V/ns
V/ns
A
°C
°C
G (1)
N−Channel
D (2)
S (3)
1
3
NDF05N50ZG,
NDF05N50ZH
TO−220FP
CASE 221AH
4
4
1
1 2
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I
S
= 4.4 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
3
NDD05N50Z−1G
IPAK
CASE 369D
2
3
NDD05N50ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
January, 2015
−
Rev. 8
1
Publication Order Number:
NDF05N50Z/D
NDF05N50Z, NDD05N50Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
NDF05N50Z
NDD05N50Z
(Note 3) NDF05N50Z
(Note 4) NDD05N50Z
(Note 3) NDD05N50Z−1
Symbol
R
qJC
R
qJA
Value
4.2
1.5
50
38
80
Unit
°C/W
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Co-
efficient
Drain−to−Source Leakage Current
BV
DSS
DBV
DSS
/
DT
J
I
DSS
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 250 V, I
D
= 5 A,
V
GS
= 10 V, R
G
= 5
W
1.5
V
DD
= 250 V, I
D
= 5 A,
V
GS
= 10 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 500 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 2.2 A
V
DS
= V
GS
, I
D
= 50
mA
V
DS
= 15 V, I
D
= 2.5 A
421
50
8
9
2
5
3.0
1.25
3.9
3.5
530
68
15
18.5
4
10
6.5
4.5
11
15
24
14
8
632
80
25
28
6
15
V
W
ns
nC
25°C
150°C
500
0.6
1
50
±10
1.5
4.5
mA
W
V
S
pF
V
V/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 5)
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Reverse Transfer Capacitance
(Note 6)
Total Gate Charge (Note 6)
Gate−to−Source Charge (Note 6)
Gate−to−Drain (“Miller”) Charge
(Note 6)
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
I
S
= 5 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 5 A, di/dt = 100 A/ms
255
1.25
1.6
V
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
6. Guaranteed by design.
www.onsemi.com
2
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
10.0
9.0
I
D
, DRAIN CURRENT (A)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
5.5 V
5.0 V
5
10
15
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
25
6.0 V
V
GS
= 8 V to 10 V
7.0 V
6.5 V
10.0
9.0
I
D
, DRAIN CURRENT (A)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
T
J
= 150°C
T
J
=
−55°C
T
J
= 25°C
V
DS
= 25 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
2.50
2.25
2.00
1.75
1.50
1.25
1.00
5.0
I
D
= 2.2 A
T
J
= 25°C
2.500
2.250
2.000
1.750
1.500
1.250
1.000
0.0
V
GS
= 10 V
T
J
= 25°C
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 3. On−Region versus Gate−to−Source
Voltage
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 2.2 A
V
GS
= 10 V
1.15
1.10
1.05
1.00
0.95
0.90
I
D
= 1 mA
150
−50
−25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BV
DSS
Variation with Temperature
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3
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
10.0
T
J
= 150°C
1200
1100
1000
C, CAPACITANCE (pF)
I
DSS
, LEAKAGE (mA)
900
800
700
600
500
400
300
200
100
0.1
0
50
100 150 200 250 300 350 400 450 500
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0
C
rss
5
C
iss
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
1.0
C
oss
10 15 20 25 30 35 40 45
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
50
Figure 7. Drain−to−Source Leakage Current
versus Voltage
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
Q
T
V
DS
V
GS
Q
GS
Q
GD
250
200
150
100
V
DS
= 250 V
I
D
= 5 A
T
J
= 25°C
0
2
4
6
8
10 12 14 16
Q
g
, TOTAL GATE CHARGE (nC)
18
50
0
20
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
I
S
, SOURCE CURRENT (A)
V
DD
= 250 V
I
D
= 5 A
V
GS
= 10 V
t
d(off)
t
r
t
f
t
d(on)
t, TIME (ns)
100
10
T
J
= 150°C
1.0
125°C
25°C
−55°C
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.2
10
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
300
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
100
V
GS
≤
30 V
SINGLE PULSE
T
C
= 25°C
100
ms
1 ms
10 ms
dc
10
ms
I
D
, DRAIN CURRENT (A)
10
100
V
GS
v
30 V
SINGLE PULSE
T
C
= 25°C
100
ms
1 ms
10 ms
dc
10
ms
I
D
, DRAIN CURRENT (A)
10
1
1
0.1
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
0.1
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF05N50Z
10
50% (DUTY CYCLE)
1
R(t) (C/W)
20%
10%
5.0%
0.1
2.0%
1.0%
0.01
1E−06
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDD05N50Z
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
qJA
= 4.2°C/W
Steady State
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDF05N50Z
10
1
50% (DUTY CYCLE)
R(t) (C/W)
20%
10%
0.1
5.0%
2.0%
1.0%
0.01
1E−06
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
R
qJC
= 1.5°C/W
Steady State
1E+02
1E+03
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Case) for NDD05N50Z
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5
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