NCP362
USB Positive Overvoltage
and Overcurrent Protection
with TVS for V
BUS
and Low
Capacitance ESD Diodes for
Data
The NCP362 disconnects systems at its output when wrong VBUS
operating conditions are detected at its input. The system is positive
overvoltage protected up to +20 V, overcurrent protected up to
750 mA, and receives protection from ESD diodes for the high speed
USB data and V
BUS
lines. Thanks to an integrated PMOS FET, no
external device is necessary, reducing the system cost and the PCB
area of the application board.
The NCP362 is able to instantaneously disconnect the output from
the input if the input voltage exceeds the overvoltage threshold
OVLO. Thanks to an overcurrent protection, the integrated PMOS
turns off when the charge current exceeds the current limit (see
options in ordering information).
The NCP362 provides a negative going flag (FLAG) output, which
alerts the system that voltage, current or overtemperature faults have
occurred.
In addition, the device integrates ESD diodes for V
BUS
and data
lines which are IEC61000−4−2, level 4 compliant. The ESD diodes
for D+ and D− are compatible with high speed USB thanks to an ultra
low capacitance of 0.5 pF.
Features
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MARKING
DIAGRAMS
UDFN10
CASE 517AV
XXX
M
G
XXXM
G
= Specific Device Code
= Date Code
= Pb−Free Package
PIN CONNECTIONS
EN 1
GND 2
IN 3
V
BUS
TVS 4
GND 5
PAD1
GND
10 FLAG
9 OUT
8 GND
7 NC
6 NC
PAD2
GND
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
NCP362A Version
(V
BUS TVS
+ OVP/OCP)
EN 1
GND 2
IN 3
NC 4
GND 5
PAD1
GND
10 FLAG
9 OUT
8 GND
7 D+
6 D−
Overvoltage Protection up to 20 V
Undervoltage and Overvoltage Lockout (UVLO/OVLO)
Overcurrent Protection
Transient Voltage Suppressor for V
BUS
Pin
Ultra Low Capacitance ESD for Data Lines
Alert FLAG Output and EN Enable Pin
Thermal Shutdown
Compliance to IEC61000−4−2 (Level 4)
Compliance Machine Model and Human Body Model
10 Lead UDFN 2x2.5 mm Package
This is a Pb−Free Device
USB Devices
Mobile Phones
Peripheral
Personal Digital Assistant
MP3/MP4 Players
TV and Set Top Boxes
PAD2
GND
NCP362B Version
(D+/− ESD low cap + OVP/OCP)
EN 1
GND 2
IN 3
V
BUS
TVS 4
GND 5
PAD1
GND
10 FLAG
9 OUT
8 GND
7 D+
6 D−
Applications
PAD2
GND
NCP362C Version
(V
BUS TVS
+ D+/− ESD low cap + OVP/OCP)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 15 of this data sheet.
Q
©
Semiconductor Components Industries, LLC, 2009
March, 2009
−
Rev. 0
1
Publication Order Number:
NCP362/D
NCP362
USB Connector
Bottom Connector
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
VBUS
D+
D−
ID
GND
I limit
>550 mA
Soft
start
VIN/VBUS
OUT
Battery Charger
System
VREF
Driver
OVLO
UVLO
Logic
Thermal
shutdown
VBUS TVS
EN pin
FLAG
GND
NCP362A
D+
D−
USB Transciever
Figure 1. Typical Application Circuit with Wall Adapter / V
BUS TVS
Protection (NCP362A)
USB Connector
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
VBUS
D+
D−
ID
GND
I limit
>550 mA
Soft
start
VIN/VBUS
OUT
Battery Charger
System
VREF
Driver
OVLO
UVLO
Logic
Thermal
shutdown
VBUS TVS
D+
D−
EN pin
FLAG
GND
NCP362C
D+
D−
USB Transciever
Figure 2. Typical Application Circuit with Full Integrated ESD for USB (NCP362C)
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NCP362
PIN FUNCTION DESCRIPTION
Pin No.
1
Name
EN
Type
INPUT
Description
Enable Pin. The device enters in shutdown mode when this pin is tied to a high level. In this case the
output is disconnected from the input. To allow normal functionality, the EN pin shall be connected to
GND or to a I/O pin. This pin does not have an impact on the fault detection.
Ground
Input Voltage Pin. This pin is connected to the V
BUS
. A 1
mF
low ESR ceramic capacitor, or larger,
must be connected between this pin and GND.
Cathode of the V
BUS
transient voltage suppressor diode. (NCP362A & NCP362C) This pin is not
connected in the NCP362B
Ground
Cathode of the D− ESD diode. (NCP362B & NCP362C) This pin is not connected in the NCP362A
Cathode of the D+ ESD diode. (NCP362B & NCP362C) This pin is not connected in the NCP362A
Ground
Output Voltage Pin. The output is disconnected from the V
BUS
power supply when the input voltage is
above OVLO threshold or below UVLO threshold. A 1
mF
capacitor must be connected to this pin.
The two OUT pins must be hardwired to common supply.
Fault Indication Pin. This pin allows an external system to detect a fault on V
BUS
pin. The FLAG pin
goes low when input voltage exceeds OVLO threshold. Since the FLAG pin is open drain functional-
ity, an external pull up resistor to V
CC
must be added.
Ground. Must be used for power dissipation. See PCB recommendations.
Anode of the TVS and/or ESD diodes. Must be connected to GND.
2
3
4
5
6
7
8
9
GND
IN
V
BUS
TVS
GND
D−
D+
GND
OUT
POWER
POWER
INPUT
POWER
INPUT
INPUT
POWER
OUTPUT
10
FLAG
OUTPUT
PAD1
PAD2
GND
GND
POWER
POWER
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NCP362
MAXIMUM RATINGS
Rating
Minimum Voltage to GND (Pins IN, EN, OUT, FLAG)
Maximum Voltage to GND (Pin IN)
Maximum Voltage to GND (Pins EN, OUT, FLAG)
Maximum DC Current from Vin to Vout (PMOS) (Note 1)
Thermal Resistance, Junction−to−Air
Operating Ambient Temperature Range
Storage Temperature Range
Junction Operating Temperature
Human Body Model (HBM) (Note 2)
Pins EN, IN, OUT, GND
V
BUS TVS
Machine Model (MM) (Note 3)
Pins EN, IN, OUT, GND
V
BUS TVS
IEC 61000−4−2
Pin V
BUS TVS
Contact
Air
Pins D+ & D−
Contact
Air
Forward Voltage @ 10 mA
Pin V
BUS TVS
Pins D+ & D−
Moisture Sensitivity
MSL
Vesd
30
30
10
15
1.1
1.0
Level 1
−
kV
kV
kV
kV
V
Symbol
Vmin
Vmax
in
Vmax
Imax
R
qJA
T
A
T
stg
T
J
Value
−0.3
21
7.0
600
280
−40
to +85
−65
to +150
150
2000
16000
V
200
400
Unit
V
V
V
mA
°C/W
°C
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. With minimum PCB area. By decreasing R
qJA
, the current capability increases. See PCB recommendation page 9.
2. Human Body Model, 100 pF discharged through a 1.5 kW resistor following specification JESD22/A114.
3. Machine Model, 200 pF discharged through all pins following specification JESD22/A115.
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NCP362
ELECTRICAL CHARACTERISTICS
(Min/Max limits values (−40°C < T
A
< +85°C) and V
in
= +5.0 V. Typical values are T
A
= +25°C, unless otherwise noted.)
Characteristic
Input Voltage Range
Undervoltage Lockout Threshold
Uvervoltage Lockout Hysteresis
Overvoltage Lockout Threshold
Overvoltage Lockout Hysteresis
V
in
versus V
out
Dopout
Overcurrent Limit
Supply Quiescent Current
Standby Current
Zero Gate Voltage Drain Current
FLAG Output Low Voltage
FLAG Leakage Current
EN Voltage High
EN Voltage Low
EN Leakage Current
TIMINGS
Start Up Delay
FLAG going up Delay
Output Turn Off Time
Alert Delay
Disable Time
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Capacitance (Note 7)
Pin V
BUS TVS
Pins D+ & D−
Clamping Voltage (Notes 5, 6, 7)
Pin V
BUS TVS
Pins D+ & D−
Working Peak Reverse Voltage
(Note 7)
Pin V
BUS TVS
Pins D+ & D−
Maximum Reverse Leakage
Current
Breakdown Voltage (Note 4)
Pin V
BUS TVS
Pins D+ & D−
4.
5.
6.
7.
t
on
t
start
t
off
t
stop
t
dis
T
sd
T
sdhyst
C
30
0.5
V
C
@ I
PP
= 5.9 A
@ I
PP
= 1.0 A
0.9
V
23.7
9.8
V
12
5.0
I
R
V
BR
@ V
RWM
@ I
T
= 1.0 mA
1.0
mA
V
13.5
5.4
From V
in
> UVLO to V
out
= 0.8xV
in
, See Fig 3 & 9
From V
in
> UVLO to FLAG = 1.2 V, See Fig 3 & 10
From V
in
> OVLO to V
out
≤
0.3 V, See Fig 4 & 11
V
in
increasing from 5 V to 8 V at 3 V/ms.
From V
in
> OVLO to FLAG
≤
0.4 V, See Fig 4 & 12
V
in
increasing from 5 V to 8 V at 3 V/ms
From EN 0.4 to 1.2V to V
out
≤
0.3 V, See Fig 5 & 13
V
in
= 4.75 V.
4.0
3.0
0.7
1.0
3.0
150
30
1.5
15
ms
ms
ms
ms
ms
°C
°C
pF
Symbol
V
in
UVLO
UVLO
hyst
OVLO
OVLO
hyst
V
drop
I
lim
Idd
I
std
I
DSS
Vol
flag
FLAG
leak
V
ih
V
il
EN
leak
V
in
= 5 V, I charge = 500 mA
V
in
= 5 V
No Load, V
in
= 5.25 V
V
in
= 5 V, EN = 1.2 V
V
DS
= 20 V, V
GS
= 0 V
V
in
> OVLO
Sink 1 mA on FLAG pin
FLAG level = 5 V
V
in
from 3.3 V to 5.5 V
V
in
from 3.3 V to 5.5 V
EN = 5.5 V or GND
170
1.2
0.55
5.0
550
V
in
rises above OVLO threshold
V
in
falls below UVLO threshold
Conditions
Min
1.2
2.85
50
5.43
50
3.0
70
5.675
100
150
750
20
26
0.08
400
Typ
Max
20
3.15
90
5.9
125
200
950
35
37
Unit
V
V
mV
V
mV
mV
mA
mA
mA
mA
mV
nA
V
V
nA
ESD DIODES
(T
A
= 25°C, unless otherwise noted)
V
RWM
V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
Surge current waveform per Figure 28 in ESD paragraph.
For test procedures see Figures 26 and 27: IEC61000−4−2 spec, diagram of ESD test setup and Application Note AND8307/D.
ESD diode parameters are guaranteed by design.
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