NBXSBA010
3.3 V, 100 MHz LVPECL
Clock Oscillator
The NBXSBA010, single frequency, crystal oscillator (XO) is
designed to meet today’s requirements for 3.3 V LVPECL clock
generation applications. The device uses a high Q fundamental crystal
and Phase Lock Loop (PLL) multiplier to provide 100 MHz, ultra low
jitter and phase noise LVPECL differential output.
This device is a member of ON Semiconductor’s PureEdget clock
family that provides accurate and precision clock solutions.
Available in 5 mm x 7 mm SMD (CLCC) package on 16 mm tape
and reel in quantities of 1,000.
Features
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MARKING DIAGRAM
NBXSBA010
100
AWLYYWWG
•
•
•
•
•
•
•
•
•
•
•
•
•
LVPECL Differential Output
Uses High Q Fundamental Mode Crystal and PLL Multiplier
Ultra Low Jitter and Phase Noise
−
0.4 ps (12 kHz
−
20 MHz)
Output Frequency
−
100 MHz
Hermetically Sealed Ceramic SMD Package
RoHS Compliant
Operating Range 3.3 V
±10%
Total Frequency Stability
−
$50
PPM
This is a Pb−Free Device
Infiniband
PCIe
Host Bus Adapter
RAID Controller
6 PIN CLCC
LN SUFFIX
CASE 848AB
NBXSBA010 = NBXSBA010 (±50 PPM)
100
= Output Frequency (MHz)
A
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NBXSBA010LN1TAG CLCC−6 1000/Tape & Reel
(Pb−Free)
NBXSBA010LNHTAG CLCC−6 100/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Applications
V
DD
6
CLK CLK
5 4
Crystal
PLL
Clock
Multiplier
1
OE
2
NC
3
GND
Figure 1. Simplified Logic Diagram
©
Semiconductor Components Industries, LLC, 2009
March, 2009
−
Rev. 2
1
Publication Order Number:
NBXSBA010/D
NBXSBA010
OE
NC
GND
1
2
3
6
5
4
V
DD
CLK
CLK
Figure 2. Pin Connections
(Top View)
Table 1. PIN DESCRIPTION
Pin No.
1
2
3
4
5
6
Symbol
OE
NC
I/O
LVTTL/LVCMOS
Control Input
N/A
Description
Output Enable Pin. When left floating pin defaults to logic HIGH and output is active.
See OE pin description Table 2.
No Connect.
Ground 0 V
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Á
Á Á
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Á
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Á Á
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Á
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Á
ÁÁÁÁÁ Á
Á Á
Á Á
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ÁÁÁÁÁÁÁÁÁÁÁÁ
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Á
Á
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ÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á
GND
CLK
CLK
V
DD
Power Supply
LVPECL Output
LVPECL Output
Power Supply
Non−Inverted Clock Output. Typically loaded with 50
W
receiver termination resistor to
V
TT
= V
DD
−
2 V.
Inverted Clock Output. Typically loaded with 50
W
receiver termination resistor to
V
TT
= V
DD
−
2 V.
Positive power supply voltage. Voltage should not exceed 3.3 V
±10%.
Table 2. OUTPUT ENABLE TRI−STATE FUNCTION
OE Pin
Open
HIGH Level
LOW Level
Active
Active
High Z
Output Pins
Table 3. ATTRIBUTES
Characteristic
Internal Default State Resistor
ESD Protection
Human Body Model
Machine Model
Value
170 kW
2 kV
200 V
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
V
DD
I
out
T
A
T
stg
T
sol
Parameter
Positive Power Supply
LVPECL Output Current
Operating Temperature Range
Storage Temperature Range
Wave Solder
See Figure 5
Condition 1
GND = 0 V
Continuous
Surge
Condition 2
Rating
4.6
25
50
−40
to +85
−55
to +120
260
Units
V
mA
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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NBXSBA010
Table 5. DC CHARACTERISTICS
(V
DD
= 3.3 V
±
10%, GND = 0 V, T
A
=
−40°C
to +85°C) (Note 2)
Symbol
I
DD
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
OUTPP
Characteristic
Power Supply Current
OE Input HIGH Voltage
OE Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage
V
DD
= 3.3 V
Output LOW Voltage
V
DD
= 3.3 V
Output Voltage Amplitude
OE
FSEL
OE
FSEL
2000
GND
−
300
−100
−100
−100
−100
V
DD
−1195
2105
V
DD
−1945
1355
700
Conditions
Min.
Typ.
75
Max.
100
V
DD
800
+100
+100
+100
+100
V
DD
−945
2355
V
DD
−1600
1700
Units
mA
mV
mV
mA
mA
mV
mV
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50
W
to V
DD
−
2.0 V. See Figure 4.
Table 6. AC CHARACTERISTICS
(V
DD
= 3.3 V
±
10%, GND = 0 V, T
A
=
−40°C
to +85°C) (Note 3)
Symbol
f
CLKOUT
Df
F
NOISE
Characteristic
Output Clock Frequency
Frequency Stability
−
NBXSBA010
Phase−Noise Performance
f
CLKout
= 100 MHz
(See Figure 3)
(Note 4)
100 Hz of Carrier
1 kHz of Carrier
10 kHz of Carrier
100 kHz of Carrier
1 MHz of Carrier
10 MHz of Carrier
t
jit
(F)
t
jitter
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
Period, RMS
Period, Peak−to−Peak
t
OE/OD
t
DUTY_CYCLE
t
R
t
F
t
start
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
Output Rise Time (20% and 80%)
Output Fall Time (80% and 20%)
Start−up Time
Aging
1
st
Year
Every Year After 1
st
48
50
250
250
1
12 kHz to 20 MHz
1000 Cycles
1000 Cycles
10,000 Cycles
10,000 Cycles
−109
−125
−132
−132
−141
−161
0.4
1.5
15
1
10
0.9
8
30
4
20
200
52
400
400
5
3
1
Conditions
Min.
Typ.
100
±50
Max.
Units
MHz
ppm
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
ps
ps
ps
ps
ps
ns
%
ps
ps
ms
ppm
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50
W
to V
DD
−
2.0 V. See Figure 4.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
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NBXSBA010
Figure 3. Typical Phase Noise Plot
Table 7. RELIABILITY COMPLIANCE
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Á
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Shock
Mechanical
Mechanical
Mechanical
Mechanical
MIL−STD−833, Method 2002, Condition B
MIL−STD−833, Method 2003
MIL−STD−202, Method 215
Solderability
Vibration
MIL−STD−833, Method 2007, Condition A
MIL−STD−833, Method 1011, Condition A
Solvent Resistance
Thermal Shock
Environment
Environment
Moisture Level Sensitivity
MSL1 260°C per IPC/JEDEC J−STD−020D
Parameter
Standard
Method
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4
NBXSBA010
NBXSBA010
Q
Driver
Device
Q
Z
o
= 50
W
50
W
50
W
D
Z
o
= 50
W
D
Receiver
Device
V
TT
V
TT
= V
DD
−
2.0 V
Figure 4. Typical Termination for Output Driver and Device Evaluation
(See Application Note AND8020/D
−
Termination of ECL Logic Devices.)
Temperature (°C)
260
217
temp. 260°C
20
−
40 sec. max.
peak
3°C/sec. max.
ramp−up
6°C/sec. max.
cooling
175
150
pre−heat
reflow
60180 sec.
60150 sec.
Time
Figure 5. Recommended Reflow Soldering Profile
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