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NAND16GAH0DZA5E

产品描述1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface
产品类别存储    存储   
文件大小2MB,共116页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
标准
下载文档 详细参数 选型对比 全文预览

NAND16GAH0DZA5E概述

1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface

NAND16GAH0DZA5E规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Numonyx ( Micron )
零件包装代码BGA
包装说明LFBGA, BGA169,14X28,20
针数169
Reach Compliance Codeunknow
ECCN代码3A991.B.1.A
其他特性ALSO OPERATES WITH 3V SUPPLY
最大时钟频率 (fCLK)52 MHz
JESD-30 代码R-PBGA-B169
长度16 mm
内存密度2147483648 bi
内存集成电路类型FLASH CARD
内存宽度8
功能数量1
端子数量169
字数268435456 words
字数代码256000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-25 °C
组织256MX8
封装主体材料PLASTIC/EPOXY
封装代码LFBGA
封装等效代码BGA169,14X28,20
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行SERIAL
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.8/3,3 V
编程电压3 V
认证状态Not Qualified
座面最大高度1.4 mm
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.65 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL EXTENDED
端子形式BALL
端子节距0.5 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度12 mm

文档预览

下载PDF文档
NAND08GAH0A
NAND16GAH0D
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply,
NAND Flash memories with MultiMediaCard™ interface
Preliminary Data
Features
Packaged NAND Flash memory with
MultiMediaCard interface
1, 2 Gbytes of formatted data storage
eMMC/MultiMediaCard system specification,
compliant with V4.1
Full backward compatibilty with previous
MultiMediaCard system specification
Bus mode
– High-speed MultiMediaCard protocol
– SPI protocol
– Three different data bus widths:1 bit, 4 bits,
8 bits
– Data transfer rate: up to 52 Mbyte/s
Operating voltage range:
– V
CCQ
=1.8 V/3 V
– V
CC
= 3 V
Supported clock frequencies: 0 to 52 MHz
Multiple Block Read (x 8 at 52 MHz):
up to 3.5 Mbyte/s
Multiple Block Write (x 8 at 52 MHz):
up to 8.5 Mbyte/s
Power dissipation
– Standby current: down to 200 µA
– Read current: down to 30 mA
– Write current: down to 30 mA
FBGA
LFBGA169 12 x 16 x 1.4 mm (ZA)
Error free memory access
– Internal enhanced data management
algorithm (wear levelling, bad block
management, garbage collection)
– Internal error correction code
Data integrity
– Data reliability: less than 1 non-recoverable
error per 10
14
bits read
– Endurance: more that 2,000,000
Program/Erase cycles
Security
– Password protection of data
– Built-in write protection (permanent or
temporary)
December 2007
Rev 2
1/116
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

NAND16GAH0DZA5E相似产品对比

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描述 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface

 
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