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NAND02GR3B2DN6E

产品描述256M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63
产品类别存储    存储   
文件大小2MB,共69页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
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NAND02GR3B2DN6E概述

256M X 8 FLASH 1.8V PROM, 25000 ns, PBGA63

256M × 8 FLASH 1.8V 可编程只读存储器, 25000 ns, PBGA63

NAND02GR3B2DN6E规格参数

参数名称属性值
厂商名称Numonyx ( Micron )
零件包装代码TSOP
包装说明TSOP1,
针数48
Reach Compliance Codeunknow
ECCN代码3A991.B.1.A
最长访问时间25000 ns
JESD-30 代码R-PDSO-G48
长度18.4 mm
内存密度2147483648 bi
内存集成电路类型FLASH
内存宽度8
功能数量1
端子数量48
字数268435456 words
字数代码256000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256MX8
封装主体材料PLASTIC/EPOXY
封装代码TSOP1
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
编程电压1.8 V
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
宽度12 mm

文档预览

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NAND02G-B2D
2-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND flash memories
Preliminary Data
Features
High density NAND flash memory
– Up to 2 Gbits of memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic EDC (error
detection code)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9.5 x 12 mm (ZA)
Status register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages
Device summary
Part number
NAND02GR3B2D
NAND02G-B2D
NAND02GW3B2D
NAND02GR4B2D
(1)
NAND02GW4B2D
(1)
Table 1.
Reference
1. x 16 organization only available for MCP products.
April 2008
Rev 3
1/69
www.numonyx.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

 
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