MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E3436A is a GaAs RF amplifier designed
for WiMAX CPE.
4.5
1.0
FEATURES
•
•
•
•
•
•
•
•
•
•
InGaP HBT Device
6V Operation
30dB Linear Gain
2.5% EVM at an Output power of 25dBm
4% EVM at an Output power of 27dBm
Integrated Output Power Detector
Integrated 1-bit 21dB Step Attenuator
50Ω Matched Input/Output Ports
Surface Mount Package
RoHS Compliant Package
4.5
36E
3436A
2527
(Lot
No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1
2
3
4
5
(X-ray Top View)
1
2
3
4
5
6
7
8
9
10
Pin
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
Po_det
GND
Vref
Vcont
DIM IN mm
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
Vc2
Vc3
1000pF
1000pF
Pin
Vcont
(0/3V)
Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms
15kohm
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/8)
July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Conditions*
Pout≤27.0dBm
Pout≤27.0dBm
Pout≤27.0dBm
Value
8
3
3.3
180
Unit
V
V
V
mA
mA
mA
dBm
%
°C
°C
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C)
Symbol
Vc1, Vc2
Vc3, Vcb
Vref
Vcont
Ic1
Ic2
Ic3
Pin
-
Tc(op)
Tstg
Input Power
Duty Cycle
Operation Temperature
Storage Temperature
Pout≤27.0dBm
Pout≤27.0dBm
Pout≤27.0dBm
-
Operation Current
Pout≤27.0dBm
Parameter
Collector Supply Voltage
Reference Voltage
ATT Control Voltage
250
900
5
50
-40~+85
-40~+125
*NOTE : Zin=Zout=50Ω
Each maximum rating is guaranteed independently.
Please take care that MGFS36E3436A is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, Vc=6V, Vref=2.85V, Duty Cycle < 50%, 64QAM OFDM Modulation)
Symbol
f
Gp
ηt
Pout
Parameter
Frequency
Gain
Efficiency
Output Power
Spectrum Mask
EVM
Meets
Pout=27dBm
ETSI EN302-326, EqC-PET=O, EqC-EMO=4
ETSI EN302-326, EqC-PET=O, EqC-EMO=6
Pout=25dBm
Pout=27dBm
Pout=25dBm
Pout=27dBm
Vcont=3V
Vc=6V, Vref=0V
Test Conditions*
Min
-
3.4
30
11
28
26
2.5
4
1.7
2.0
21
10
%
Limits
Typ
Max
3.6
GHz
dB
%
dBm
Unit
EVM
Vdet
ATT
Ileak
Power Detector Voltage
Control Gain Step
Leakage Current
V
dB
μA
*NOTE : Zin=Zout=50Ω
ESD RATING
- Class 1A (HBM)
- Level 3
MOISTURE SENSITIVITY LEVEL
THERMAL RESISTANCE
:
30°C/W
MITSUBISHI ELECTRIC CORP.
(2/8)
July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
PERFORMANCE DATA
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50%
WiMAX OFDM 64QAM signal input. Tc=25degC.
Output Power vs. Input Power
30
Efficiency vs. Output Power
20
18
16
Output Power (dBm)
25
14
Efficiency (%)
3.4GHz
3.5GHz
3.6GHz
10
-20
-15
-10
Input Power (dBm)
-5
0
12
10
8
6
4
2
0
10
15
20
Output Power (dBm)
25
30
3.4GHz
3.5GHz
3.6GHz
20
15
EVM vs. Output Power
6.0
5.5
5.0
4.5
4.0
EVM (%)
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
3.4GHz
3.5GHz
3.6GHz
10
15
20
Output Power (dBm)
25
30
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
3.4GHz
3.5GHz
3.6GHz
30
0.0
Attenuation Performance
40
Vcont=0V
Vcont=3V
30
S21 (dB)
20
10
0
3.0
3.2
3.4
3.6
3.8
4.0
Frequency (GHz)
MITSUBISHI ELECTRIC CORP.
(3/8)
July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50%
f=3.5GHz, WiMAX OFDM 64QAM signal input.
Output Power vs. Input Power
30
Efficiency vs. Output Power
20
18
16
Output Power (dBm)
25
14
Efficiency (%)
-40degC
0degC
25degC
60degC
85degC
-25
-20
-15
-10
Input Power (dBm)
-5
0
12
10
8
6
4
2
0
10
15
20
Output Power (dBm)
25
30
-40degC
0degC
25degC
60degC
85degC
20
15
10
EVM vs. Output Power
6.0
5.5
5.0
4.5
4.0
EVM (%)
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
-40degC
0degC
25degC
30
60degC
85degC
0.0
10
15
20
Output Power (dBm)
25
30
-40degC
0degC
25degC
60degC
85degC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
Attenuation Level
24
23
Attenuation Level (dB)
22
21
20
19
18
-40
-20
0
20
40
60
Case Temperature (degC)
80
100
MITSUBISHI ELECTRIC CORP.
(4/8)
July-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E3436A
Specifications are subject to change without notice.
3.4-3.6GHz HBT HYBRID IC
Vc=6V, Vref=2.85V, Vcont=0V, Duty Cycle=50%
WiMAX OFDM 64QAM signal input. Tc=25degC.
Output Power vs. Distortion
-10
-15
-20
Distortion (dBc)
-10
f=3.4GHz
f=3.5GHz
f=3.6GHz
3.5MHz offset
-15
-20
Distortion (dBc)
-25
-30
-35
-40
-45
-50
-55
f=3.4GHz
f=3.5GHz
f=3.6GHz
5MHz offset
-25
-30
-35
-40
-45
-50
-55
10 12
14 16 18
20 22 24 26
28 30
Output Power (dBm)
10 12 14 16 18 20 22 24 26 28 30
Output Power (dBm)
-20
-25
-30
-35
Distortion (dBc)
f=3.4GHz
f=3.5GHz
f=3.6GHz
7.4MHz offset
-40
-45
-50
-55
-60
-65
-70
10 12 14 16 18 20 22 24 26 28 30
Output Power (dBm)
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
f=3.4GHz
f=3.5GHz
f=3.6GHz
14MHz offset
Distortion (dBc)
10 12 14 16 18 20 22 24 26 28 30
Output Power (dBm)
*
RBW
*
VBW
*
Att
*
SWT
Spectrum Emission Mask
*
RBW 30 kHz
*
VBW 300 Hz
*
Att
*
SWT 9.2 s
Marker 3 [T1 ]
-37.71 dBm
3.495000000 GHz
Marker 1 [T1 ]
-1.29 dBm
3.501626603 GHz
Marker 2 [T1 ]
-38.45 dBm
3.505000000 GHz
TRG
LVL
A
1 RM
*
VIEW
30 kHz
300 Hz
9.2 s
Marker 3 [T1 ]
-30.29 dBm
3.495000000 GHz
Marker 1 [T1 ]
0.97 dBm
3.501626603 GHz
Marker 2 [T1 ]
A
Ref
20
20 dBm
Offset
30.6 dB
0 dB
Ref
20
20 dBm
Offset
30.6 dB
0 dB
10
1 RM
*
VIEW
10
1
0
1
0
-29.55 dBm
3.505000000 GHz
TRG
LVL
-10
-10
-20
-20
3
-30
EXT
-30
2
EXT
3DB
3
-40
2
3DB
-40
ETSI-F
ETSI-G
-50
-50
-60
-60
-70
-70
-80
-80
Center
3.5 GHz
3.5 MHz/
Span
35 MHz
Center
3.5 GHz
3.5 MHz/
Span
35 MHz
Pout(max.)=26dBm for EqC-EMO=6
Date: 20.DEC.2007
13:40:42
Pout(max.)=28dBm for EqC-EMO=4
Date: 20.DEC.2007
13:39:42
MITSUBISHI ELECTRIC CORP.
(5/8)
July-2008
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