PRELIMINARY
CY7C1386DV25
CY7C1387DV25
18-Mbit (512K x 36/1M x 18) Pipelined DCD
Sync SRAM
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 225, 200, and 167 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
• Depth expansion without wait state
• 2.5V + 5% power supply (V
DD
)
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
• Provide high-performance 3-1-1-1 access rate
•
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1386DV25/CY7C1387DV25 SRAM integrates
524,288 x 36 and 1048,576 x 18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs,
address-pipelining
Chip
Enable
(CE
1
),
depth-expansion Chip Enables (CE
2
and CE
3[2]
), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
X
,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1386DV25/CY7C1387DV25 operates from a +2.5V
power supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
250 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.6
350
70
225 MHz
2.8
325
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Shaded areas contain advance information.
Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
and CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in Single Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05548 Rev. **
•
3901 North First Street
•
San Jose
,
CA 95134
•
408-943-2600
Revised August 12, 2004
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