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CYDD36S18V18-133BGC

产品描述Dual-Port SRAM, 1MX36, 11ns, CMOS, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, PLASTIC, BGA-484
产品类别存储    存储   
文件大小2MB,共53页
制造商Cypress(赛普拉斯)
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CYDD36S18V18-133BGC概述

Dual-Port SRAM, 1MX36, 11ns, CMOS, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, PLASTIC, BGA-484

CYDD36S18V18-133BGC规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码BGA
包装说明27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, PLASTIC, BGA-484
针数484
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间11 ns
其他特性PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
JESD-30 代码S-PBGA-B484
JESD-609代码e0
长度27 mm
内存密度37748736 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端口数量2
端子数量484
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织1MX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装等效代码BGA484,22X22,40
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)220
电源1.5/1.8 V
认证状态Not Qualified
座面最大高度2.46 mm
最大待机电流0.59 A
最小待机电流1.5 V
最大压摆率1.22 mA
最大供电电压 (Vsup)1.58 V
最小供电电压 (Vsup)1.42 V
标称供电电压 (Vsup)1.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度27 mm
Base Number Matches1

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FullFlex
FullFlex™ Synchronous
DDR Dual-Port SRAM
Features
• True dual-ported memory allows simultaneous access
to the shared array from each port
• Synchronous pipelined operation with selectable
Double Data Rate (DDR) or Single Data Rate (SDR)
operation on each port
— DDR interface at 200 MHz
— SDR interface at 250 MHz
— Up to 36-Gb/s bandwidth (250 MHz * 72 bit * 2 ports)
• Selectable pipelined or flow-through mode
• 1.5V or 1.8V core power supply
• Commercial and Industrial temperature ranges
• IEEE 1149.1 JTAG boundary scan
• Available in 484-ball PBGA Packages and 256-ball
FBGA Packages
• FullFlex72 family
— 18 Mbit: 256K x 36 x 2 DDR or 256K x 72 SDR
(CYDD18S72V18)
— 9 Mbit: 128K x 36 x 2 DDR or 128K x 72 SDR
(CYDD09S72V18)
— 4 Mbit: 64K x 36 x 2 DDR or 64 x 72 SDR
(CYDD04S72V18)
• FullFlex36 family
— 36 Mbit: 512K x 36 x 2 DDR (CYDD36S36V18)
— 18 Mbit: 256K x 36 x 2 DDR (CYDD18S36V18)
— 9 Mbit: 128K x 36 x 2 DDR (CYDD09S36V18)
— 4 Mbit: 64K x 36 x 2 DDR (CYDD04S36V18)
• FullFlex18 family
— 36 Mbit: 1M x 18 x 2 DDR (CYDD36S18V18)
— 18 Mbit: 512K x 18 x 2 DDR (CYDD18S18V18)
— 9 Mbit: 256K x 18 x 2 DDR (CYDD09S18V18)
— 4 Mbit: 128K x 18 x 2 DDR (CYDD04S18V18)
• Built-in deterministic access control to manage
address collisions
— Deterministic flag output upon collision detection
— Collision detection on back-to-back clock cycles
— First Busy Address readback
• Advanced features for improved high-speed data
transfer and flexibility
— Variable Impedance Matching (VIM)
— Echo clocks
— Selectable LVTTL (3.3V), Extended HSTL
(1.4V–1.9V), 1.8V LVCMOS, or 2.5V LVCMOS I/O on
each port
— Burst counters for sequential memory access
— Mailbox with interrupt flags for message passing
— Dual Chip Enables for easy depth expansion
Functional Description
The FullFlex™ Dual-Port SRAM families consist of 4-Mbit,
9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static
RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two
ports are provided, allowing the array to be accessed simulta-
neously. Simultaneous access to a location triggers determin-
istic access control. For FullFlex72, these ports can operate
independently in DDR mode with 36-bit bus widths or in SDR
mode with 72-bit bus widths. For FullFlex36 and FullFlex18,
the ports operate in DDR mode only. Each port can be
independently configured for two pipelined stages for SDR
mode or 2.5 stages in DDR mode. Each port can also be
configured to operate in pipelined or flow-through mode in
SDR mode.
Advanced features include built-in deterministic access
control to manage address collisions during simultaneous
access to the same memory location, Variable Impedance
Matching (VIM) to improve data transmission by matching the
output driver impedance to the line impedance, and echo
clocks to improve data transfer.
To reduce the static power consumption, chip enables can be
used to power down the internal circuitry. The number of
cycles of latency before a change in CE0 or CE1 will enable
or disable the databus matches the number of cycles of read
latency selected for the device. In order for a valid write or read
to occur, both chip enable inputs on a port must be active.
Each port contains an optional burst counter on the input
address register. After externally loading the counter with the
initial address, the counter will increment the address inter-
nally.
Additional features of this device include a mask register and
a mirror register to control counter increments and
wrap-around. The counter-interrupt (CNTINT) flags notify the
host that the counter will reach maximum count value on the
next clock cycle. The host can read the burst-counter internal
address, mask register address, and busy address on the
address lines. The host can also load the counter with the
address stored in the mirror register by utilizing the retransmit
functionality. Mailbox interrupt flags can be used for message
passing, and JTAG boundary scan and asynchronous Master
Reset (MRST) are also available. The logic block diagram in
Figure 1
displays these features.
The FullFlex72 DDR family of devices is offered in a 484-ball
plastic BGA package. The FullFlex36 and FullFlex18 DDR
only families of devices are offered in both 484-ball and
256-ball fine pitch BGA packages.
Cypress Semiconductor Corporation
Document #: 38-06072 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 21, 2006
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