(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[1]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
......................................–0.5V to V
CC
+0.5V
DC Input Voltage
[1]
...................................–0.5V to V
CC
+0.5V
CY7C1021B
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
[2]
0°C to +70°C
–40°C to +85°C
V
CC
5V
±
10%
5V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
[1]
Input Load
Current
Output
Leakage
Current
Output Short
Circuit
Current
[3]
V
CC
Operating
Supply
Current
Automatic CE
Power-Down
Current
— TTL Inputs
Automatic CE
Power-Down
Current
— CMOS
Inputs
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
,
CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
,
f = f
MAX
Max. V
CC
,
CE > V
CC
–
0.3V, V
IN
>
V
CC
– 0.3V,
or V
IN
<
0.3V, f = 0
L
Test
Conditions
V
CC
= Min.,
I
OH
= –4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
2.2
-0.5
−1
−1
7C1021B-9
Min.
2.4
Max.
2.4
0.4
6.0
0.5
+1
+1
2.2
−0.5
−1
−1
7C1021B-10 7C1021B-12 7C1021B-15 7C1021B-20
Min.
2.4
0.4
6.0
0.8
+1
+1
2.2
–0.5
–1
–1
Max.
Min.
2.4
0.4
6.0
0.8
+1
+1
2.2
–0.3
–1
–5
Max.
Min.
2.4
0.4
6.0
0.8
+1
+5
2.2
–0.3
–1
–5
Max.
Min.
2.4
0.4
6.0
0.8
+1
+5
Max. Unit
V
V
V
V
µA
µA
I
OS
−300
−300
–300
–300
–300
mA
I
CC
220
220
220
220
220
mA
I
SB1
40
40
40
40
40
mA
I
SB2
10
0.5
10
0.5
10
0.5
10
0.5
10
0.5
mA
mA
Shaded areas contain advance information.
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
8
Unit
pF
pF
Notes:
1. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
2. T
A
is the “instant on” case temperature.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
2
PRELIMINARY
AC Test Loads and Waveforms
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
OUTPUT
Equivalent to: THÉVENIN
EQUIVALENT
R2
255Ω
R 481
Ω
R 481
Ω
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
167
30 pF
R2
255Ω
GND
3.0V
90%
10%
CY7C1021B
ALL INPUT PULSES
90%
10%
(b)
Rise Time: 1 V/ns
1021B-3
Fall Time :1 V/ns
1021B-4
1.73V
Switching Characteristics
[5]
Over the Operating Range
7C1021B-9
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE
t
HZBE
WRITE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
t
BW
Read Cycle Time
Address to Data Valid
Data Hold from Address
Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
[6]
OE HIGH to High Z
[6, 7]
CE LOW to Low Z
[6]
[6, 7]
7C1021B-10
Min.
10
Max.
7C1021B-12
Min.
12
Max.
7C1021B-15
Min.
15
Max.
7C1021B-20
Min.
20
Max. Unit
ns
20
3
ns
ns
20
9
0
9
3
9
0
20
9
0
9
20
12
12
0
0
12
10
0
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9
12
ns
ns
Description
Min.
9
Max.
9
3
9
5
0
5
3
5
0
9
5
0
5
9
8
7
0
0
7
5
0
3
5
7
7
10
8
7
0
0
7
5
0
3
0
0
3
0
3
10
3
10
5
0
5
3
5
0
10
5
0
5
12
9
8
0
0
8
6
0
3
5
8
12
3
12
6
0
6
3
6
0
12
6
0
6
15
10
10
0
0
10
8
0
3
6
9
15
15
7
7
7
15
7
7
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
CYCLE
[8]
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[6]
WE LOW to High Z
[6, 7]
Byte Enable to End of Write
7
Shaded areas contain advance information.
Notes:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
6. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
7. t
HZOE
, t
HZBE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured
±500
mV from steady-state voltage.
8. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write,
and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
3
PRELIMINARY
Switching Waveforms
Read Cycle No. 1
[9, 10]
CY7C1021B
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
1021B-5
Read Cycle No. 2 (OE Controlled)
ADDRESS
[10, 11]
t
RC
CE
t
ACE
OE
BHE, BLE
t
DOE
t
LZOE
t
DBE
t
LZBE
HIGH IMPEDANCE
t
LZCE
V
CC
SUPPLY
CURRENT
t
PU
50%
t
HZCE
t
HZBE
DATA VALID
t
PD
50%
IISB
SB
1021B-6
t
HZOE
HIGH
IMPEDANCE
DATA OUT
IICC
CC
Notes:
9. Device is continuously selected. OE, CE, BHE and/or BHE = V
IL
.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
4
PRELIMINARY
Switching Waveforms
(continued)
Write Cycle No. 1 (CE Controlled)
[12, 13]
CY7C1021B
t
WC
ADDRESS
CE
t
SA
t
SCE
t
AW
t
PWE
WE
t
BW
BHE, BLE
t
SD
DATA I/O
t
HD
t
HA
1021B-7
Write Cycle No. 2 (BLE or BHE Controlled)
t
WC
ADDRESS
BHE, BLE
t
SA
t
BW
t
AW
t
PWE
WE
t
SCE
CE
t
SD
DATA I/O
t
HD
t
HA
1021B-8
Notes:
12. Data I/O is high impedance if OE or BHE and/or BLE= V
IH
.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
2008年7月24日，由NEC电子提供支持，北京理工大学研究开发出的车载电子控制系统已被成功应用于服务奥运的环保电动客车中。被应用到环保电动客车中的是由北京理工大学开发的车辆内部CAN（Controller Area Network）通信网络的主控系统，该主控系统主要负责在车辆运行过程中对整车能量管理和行驶模式进行控制，以及实现整车故障诊断等功能。主控芯片采用了NEC电子的32位微控制器，软...[详细]
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