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CMM1110-BD

产品描述Wide Band Low Power Amplifier, 2000MHz Min, 18000MHz Max, 2 X 1.10 MM, DIE
产品类别无线/射频/通信    射频和微波   
文件大小395KB,共7页
制造商Mimix Broadband (MACOM)
官网地址http://www.macom.com
标准  
下载文档 详细参数 全文预览

CMM1110-BD概述

Wide Band Low Power Amplifier, 2000MHz Min, 18000MHz Max, 2 X 1.10 MM, DIE

CMM1110-BD规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Reach Compliance Codeunknown
构造COMPONENT
增益15.5 dB
最大输入功率 (CW)20 dBm
JESD-609代码e3
最大工作频率18000 MHz
最小工作频率2000 MHz
最高工作温度85 °C
最低工作温度-40 °C
射频/微波设备类型WIDE BAND LOW POWER
端子面层Matte Tin (Sn)
Base Number Matches1

文档预览

下载PDF文档
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 01-May-06
CMM1110
Chip Device Layout
Features
Self Bias Architecture
16.0 dB Small Signal Gain
2.5 dB Noise Figure
+13.0 dBm P1dB Compression Point
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC
low noise amplifier has a small signal gain of 16.0 dB
with a noise figure of 2.5 dB across the band. This MMIC
uses Mimix Broadband’s 0.3 µm GaAs PHEMT device
model technology, and is based upon optical beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for fiber optic, microwave radio, military, space,
telecom infrastructure, test instrumentation and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
110 mA
+20 dBm
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Second Order Intercept Point (OIP2)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Supply Current (Id) (Vd1,2=8.0V)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
9.0
10.0
16.0
+/-1.0
30.0
2.5
+13.0
+31.0
+22.0
+8.0
70
Max.
18.0
-
-
-
-
-
-
-
-
-
+8.5
90
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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