MCP616/7/8/9
2.3V to 5.5V Micropower Bi-CMOS Op Amps
Features
•
•
•
•
•
•
•
•
•
•
•
Low Input Offset Voltage: ±150 µV (maximum)
Low Noise: 2.2 µV
P-P
(typical, 0.1 Hz to 10 Hz)
Rail-to-Rail Output
Low Input Offset Current: 0.3 nA (typical)
Low Quiescent Current: 25 µA (maximum)
Power Supply Voltage: 2.3V to 5.5V
Unity Gain Stable
Chip Select (CS) Capability: MCP618
Industrial Temperature Range: -40°C to +85°C
No Phase Reversal
Available in Single, Dual and Quad Packages
Description
The MCP616/7/8/9 family of operational amplifiers (op
amps) from Microchip Technology Inc. are capable of
precision, low-power, single-supply operation. These
op amps are unity-gain stable, have low input offset
voltage (±150 µV, maximum), rail-to-rail output swing
and low input offset current (0.3 nA, typical). These
features make this family of op amps well suited for
battery-powered applications.
The single MCP616, the single MCP618 with Chip
Select (CS) and the dual MCP617 are all available in
standard 8-lead PDIP, SOIC and MSOP packages. The
quad MCP619 is offered in standard 14-lead PDIP,
SOIC and TSSOP packages. All devices are fully
specified from -40°C to +85°C, with power supplies
from 2.3V to 5.5V.
Typical Applications
•
•
•
•
•
Battery Power Instruments
Weight Scales
Strain Gauges
Medical Instruments
Test Equipment
Package Types
MCP616
PDIP, SOIC, MSOP
NC
V
IN
–
V
IN
+
V
SS
1
2
3
4
8
7
6
5
MCP617
PDIP, SOIC, MSOP
8
7
6
5
V
DD
V
OUTB
V
INB
–
V
INB
+
Design Aids
•
•
•
•
•
SPICE Macro Models
Microchip Advanced Part Selector (MAPS)
Mindi™ Circuit Designer & Simulator
Analog Demonstration and Evaluation Boards
Application Notes
V
OUTA
1
NC
V
DD
V
INA
– 2
V
OUT
V
INA
+ 3
NC
V
SS
4
MCP618
PDIP, SOIC, MSOP
NC
V
IN
–
V
IN
+
V
SS
1
2
3
4
8
7
6
5
MCP619
PDIP, SOIC, TSSOP
1
2
3
4
5
6
7
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
Input Offset Voltage
Percentage of Occurrences
14%
12%
10%
8%
6%
4%
2%
0%
-100
-80
-60
-40
-20
0
20
40
60
80
100
598 Samples
V
DD
= 5.5V
CS V
OUTA
V
DD
V
INA
–
V
OUT
V
INA
+
V
DD
NC
V
INB
+
V
INB
–
V
OUTB
Input Offset Voltage (µV)
©
2008 Microchip Technology Inc.
DS21613C-page 1
MCP616/7/8/9
NOTES:
DS21613C-page 2
©
2008 Microchip Technology Inc.
MCP616/7/8/9
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Analog Input Pins (V
IN+
and V
IN–
)................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† .. V
SS
– 0.3V to V
DD
+ 0.3V
All other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Maximum Junction Temperature (T
J
)......................... .+150°C
ESD Protection On All Pins (HBM; MM)
.............. ≥
4 kV; 400V
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2 and R
L
= 100 kΩ to V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current
At Temperature
At Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Sym
V
OS
ΔV
OS
/ΔT
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
Min
–150
—
86
-35
-70
—
—
—
—
V
SS
80
Typ
—
±2.5
105
-15
-21
-12
±0.15
600||4
3||2
Max
+150
—
—
-5
—
—
—
—
—
V
DD
– 0.9
—
Units
µV
µV/°C
dB
Conditions
T
A
= -40°C to +85°C
nA
nA
T
A
= -40°C
nA
T
A
= +85°C
nA
MΩ||pF
MΩ||pF
V
dB
100
V
DD
= 5.0V,
V
CM
= 0.0V to 4.1V
R
L
= 25 kΩ to V
DD
/2,
V
OUT
= 0.05V to V
DD
– 0.05V
R
L
= 5 kΩ to V
DD
/2,
V
OUT
= 0.1V to V
DD
– 0.1V
R
L
= 25 kΩ to V
DD
/2,
0.5V input overdrive
R
L
= 5 kΩ to V
DD
/2,
0.5V input overdrive
R
L
= 25 kΩ to V
DD
/2,
A
OL
≥
100 dB
R
L
= 5 kΩ to V
DD
/2,
A
OL
≥
95 dB
V
DD
= 2.3V
V
DD
= 5.5V
A
OL
A
OL
100
95
120
115
—
—
dB
dB
V
OL
, V
OH
V
OL
, V
OH
V
SS
+ 15
V
SS
+ 45
V
SS
+ 50
V
SS
+ 100
—
—
2.3
12
—
—
—
—
±7
±17
—
19
V
DD
– 20
V
DD
– 60
V
DD
– 50
V
DD
– 100
—
—
5.5
25
mV
mV
mV
mV
mA
mA
V
µA
Linear Output Voltage Range
V
OUT
V
OUT
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
I
SC
I
SC
V
DD
I
Q
I
O
= 0
©
2008 Microchip Technology Inc.
DS21613C-page 3
MCP616/7/8/9
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Sym
GBWP
PM
SR
E
ni
e
ni
i
ni
Min
—
—
—
—
—
—
Typ
190
57
0.08
2.2
32
70
Max
—
—
—
—
—
—
Units
kHz
°
V/µs
µV
P-P
nV/√Hz
fA/√Hz
Conditions
G = +1V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
CS Hysteresis
Sym
Min
Typ
Max
Units
Conditions
V
IL
I
CSL
V
IH
I
CSH
I
SS
I
O(LEAK)
t
ON
t
OFF
V
HYST
V
SS
–1.0
—
0.01
0.2 V
DD
—
V
µA
CS = V
SS
0.8 V
DD
—
-2
—
—
0.01
-0.05
10
V
DD
2
—
—
V
µA
µA
nA
CS = V
DD
CS = V
DD
CS = V
DD
CS = 0.2V
DD
to V
OUT
= 0.9V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
CS = 0.8V
DD
to V
OUT
= 0.1V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
V
DD
= 5.0V
—
—
—
9
0.1
0.6
100
—
—
µs
µs
V
CS
t
ON
V
OUT
I
SS
I
CS
High-Z
-50 nA
(typical)
10 nA
(typical)
V
IL
V
IH
t
OFF
High-Z
-19 µA
(typical)
-50 nA
(typical)
10 nA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP618.
DS21613C-page 4
©
2008 Microchip Technology Inc.
MCP616/7/8/9
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, V
DD
= +2.3V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
Sym
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min
-40
-40
-65
—
—
—
—
—
—
Typ
—
—
—
211
89.3
149.5
70
95.3
100
Max
+85
+125
+150
—
—
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Note 1
Conditions
The MCP616/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the
Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.6 “Supply Bypass”.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
DD
/2 R
G
R
F
V
L
R
L
V
IN
MCP61X
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
IN
R
G
R
F
V
L
R
L
V
DD
/2
MCP61X
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
©
2008 Microchip Technology Inc.
DS21613C-page 5
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