C1815LT1
TRANSISTOR(NPN)
P b
Lead(Pb)-Free
1
BASE
1
2
2
EMITTER
COLLECTOR
3
3
FEATURES
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
SOT-23
Value
60
50
5
150
200
150
-55-15
0
Unit
V
V
V
mA
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
mitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
= 100uA, I
E
=0
I
C
= 0.1mA, I
B
=0
V
CB
=60V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V, I
C
= 2mA
I
C
=100mA, I
B
= 10mA
I
C
=100mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA,
f=30MHz
80
130
Min
60
50
0.1
0.1
0.1
400
0.25
1
V
V
MHz
Typ
Max
Unit
V
V
uA
uA
uA
CLASSIFICATION OF h
FE
Rank
Range
L
130-200
H
200-400
Device Marking
C1815LT1 = HF
WEITRON
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C1815LT1
5
I
C
——
V
CE
COMMON EMITTER
T
a
=25
℃
16uA
14uA
1000
h
FE
——
I
C
(mA)
12uA
3
h
FE
4
T
a
=100
℃
T
a
=25
℃
I
C
COLLECTOR CURRENT
10uA
8uA
DC CURRENT GAIN
4uA
I
B
=2uA
100
2
6uA
1
COMMON EMITTER
V
CE
= 6V
10
10
0.1
1
10
100
150
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
500
——
I
C
2000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
1000
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
β=10
10
1
10
100
150
100
0.1
1
10
β=10
100
150
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
150
100
I
C
COMMON EMITTER
V
CE
= 6V
——
V
BE
(MHz)
1000
f
T
——
I
C
(mA)
I
C
COLLECTOR CURRENT
10
TRANSITION FREQUENCY
T=
a
10
0
℃
T=
a
25
℃
f
T
100
1
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
10
0.1
0.1
0
300
600
900
1200
1
10
100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
50
C
ob
/C
ib
——
V
CB
/V
EB
COLLECTOR POWER DISSIPATION
P
C
(mW)
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
250
P
C
——
T
a
200
(pF)
10
C
ib
C
150
CAPACITANCE
C
ob
100
50
0.1
0.1
0
1
10
20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
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