Datasheet> 器件分类 > 分立半导体> 晶体管> CMLDM8002ATR

CMLDM8002ATR: 产品描述Small Signal Field-Effect Transistor, 0.00028A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICO MINI-6; 产品类别分立半导体晶体管; 文件大小229KB，共2页; 制造商Central Semiconductor

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CMLDM8002ATR概述

Small Signal Field-Effect Transistor, 0.00028A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICO MINI-6

CMLDM8002ATR规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	50 V
最大漏极电流 (Abs) (ID)	0.28 A
最大漏极电流 (ID)	0.00028 A
最大漏源导通电阻	2.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	7 pF
JESD-30 代码	R-PDSO-G6
JESD-609代码	e0
元件数量	2
端子数量	6
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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CMLDM8002A

CMLDM8002AG*

CMLDM8002AJ

SURFACE MOUNT PICOmini

DUAL P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

Central

DESCRIPTION:

Semiconductor Corp.

These CENTRAL SEMICONDUCTOR devices are dual

chip Enhancement-mode P-Channel Field Effect Transistors,

manufactured by the P-Channel DMOS Process, designed for

high speed pulsed amplifier and driver applications. The

CMLDM8002A utilizes the USA pinout configuration, while the

CMLDM8002AJ, utilizing the Japanese pinout configuration, is

available as a special order. These special Dual Transistor

devices offer Low rDS(on) and Low VDS(on).

SOT-563 CASE

Device is

Halogen Free

by design

MARKING CODES: CMLDM8002A:

CMLDM8002AG*:

CMLDM8002AJ:

FEATURES:

•

Dual Chip Device

Low rDS(on)

Low VDS(on)

Low Threshold Voltage

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

280

1.5

350

300

150

-65 to +150

357

C08

CG8

CJ8

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

• Fast Switching

• Logic Level Compatible

• Small SOT-563 package

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

IGSSF, IGSSR

VGS=20V, VDS=0V

100

IDSS

ID(ON)

BVDSS

VGS(th)

VDS(ON)

VSD

VDS=50V, VGS=0V

VDS=50V, VGS=0V, TJ=125°C

VGS=10V, VDS=10V

VGS=0V, ID=10μA

VDS=VGS, ID=250μA

VGS=10V, ID=500mA

VGS=5.0V, ID=50mA

VGS=0V, IS=115mA

500

1.0

2.5

1.5

0.15

1.3

UNITS

μA

μIIA

1.0

500

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm

R2 (8-January 2009)

CMLDM8002ATR相似产品对比

	CMLDM8002ATR	CMLDM8002AGTR	CMLDM8002AGBK	CMLDM8002ABK
描述	Small Signal Field-Effect Transistor, 0.00028A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICO MINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.00028A I(D), 50V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICO MINI-6
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-G6
针数	6	6	6	6
Reach Compliance Code	compliant	not_compliant	not_compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	50 V	50 V	50 V	50 V
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A	0.28 A
最大漏极电流 (ID)	0.00028 A	0.28 A	0.28 A	0.00028 A
最大漏源导通电阻	2.5 Ω	2.5 Ω	2.5 Ω	2.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	7 pF	7 pF	7 pF	7 pF
JESD-30 代码	R-PDSO-G6	R-PDSO-F6	R-PDSO-F6	R-PDSO-G6
JESD-609代码	e0	e0	e0	e0
元件数量	2	2	2	2
端子数量	6	6	6	6
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES
端子面层	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD
端子形式	GULL WING	FLAT	FLAT	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON

CMLDM8002ATR

CMLDM8002ATR概述

CMLDM8002ATR规格参数

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CMLDM8002ATR相似产品对比

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