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CTLT5551-M832DBKLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小232KB，共2页; 制造商Central Semiconductor; 标准

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CTLT5551-M832DBKLEADFREE概述

Transistor

CTLT5551-M832DBKLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.6 A
最小直流电流增益 (hFE)	80
湿度敏感等级	1
最高工作温度	150 °C
极性/信道类型	NPN
最大功率耗散 (Abs)	1.65 W
表面贴装	YES
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

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CTLT5551-M832D

SURFACE MOUNT

DUAL, HIGH VOLTAGE

GENERAL PURPOSE

NPN TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CTLT5551-M832D is a Dual NPN General Purpose,

High Voltage Amplifier Transistor packaged in the

small, thermally efficient, 3x2mm Tiny Leadless Module

(TLM

) surface mount case. These devices are

designed for applications where small size, operational

efficiency, and low energy consumption are the prime

requirements.

• Device is

Halogen Free

by design

FEATURES

• Dual High Voltage Transistors

(VCBO=180V Max)

• Low Leakage Current

(ICBO=50nA Max @ VCB=120V)

• Low VCE(SAT) (0.2V Max @ IC=50mA)

• Small TLM 3x2mm Leadless Surface Mount Package

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

180

160

6.0

600

1.65

-65 to +150

UNITS

°C

°C/W

Top View

Bottom View

TLM832D CASE

MARKING CODE: CFS

APPLICATIONS

General purpose high voltage amplifier

applications.

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation*

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

ICBO

VCB=120V

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

VCB=120V, TA=100°C

VEB=4.0V

IC=100μA

IC=1.0mA

IE=10μA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

VCE=5.0V,

IC=1.0mA

IC=10mA

180

160

6.0

0.15

0.20

1.00

100

300

250

UNITS

μA

VCE=5.0V, IC=50mA

VCE=10V, IC=10mA, f=100MHz

MHz

*FR-4 Epoxy PCB with copper mounting pad area of 54mm

R1 (14-August 2008)

CTLT5551-M832DBKLEADFREE相似产品对比

	CTLT5551-M832DBKLEADFREE	CTLT5551-M832DBK
描述	Transistor	Transistor
是否Rohs认证	符合	不符合
Reach Compliance Code	unknown	unknown
最大集电极电流 (IC)	0.6 A	0.6 A
最小直流电流增益 (hFE)	80	80
最高工作温度	150 °C	150 °C
极性/信道类型	NPN	NPN
最大功率耗散 (Abs)	1.65 W	1.65 W
表面贴装	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz
Base Number Matches	1	1

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