CMPT3640
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3640 type is
a PNP silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for saturated switching applications.
MARKING CODE: C2J
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
12
12
4.0
80
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICES
ICES
IB
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
fT
Cob
Cib
td
tr
VCE=6.0V
VCE=6.0V,
VCE=6.0V,
IC=100µA
IC=10mA
IE=100µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=10mA,
IC=10mA,
IC=50mA,
IB=1.0mA, TA=65°C
IB=0.5mA
IB=1.0mA
IB=5.0mA
TA=65°C
VEB=0
12
12
4.0
MAX
10
10
10
UNITS
nA
µA
nA
V
V
V
0.20
0.60
0.25
0.75
0.80
30
20
500
3.5
3.5
10
30
0.95
1.00
1.50
120
V
V
V
V
V
V
VCE=0.3V, IC=10mA
VCE=1.0V, IC=50mA
VCE=5.0V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
MHz
pF
pF
ns
ns
R5 (1-February 2010)
CMPT3640
SURFACE MOUNT
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MAX
ts
tf
ton
ton
toff
toff
VCC=6.0V,
VCC=6.0V,
IC=50mA,
IC=50mA,
IB1=IB2=5.0mA
IB1=IB2=5.0mA
20
12
25
60
35
75
UNITS
ns
ns
ns
ns
ns
ns
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
VCC=1.5V, IC=10mA, IB1=0.5mA
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
VCC=1.5V, IC=10mA, IB1=IB2=0.5mA
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C2J
R5 (1-February 2010)
w w w. c e n t r a l s e m i . c o m
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