C1815LT1
C1815LT1
FEATURES
Power dissipation
P
CM:
0.2
W (Tamb=25 )
1. 0
TRANSISTOR (NPN)
* “G” Lead(Pb)-Free
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Collector current
I
CM:
0.15
A
Collector-base voltage
V
(BR)CBO
:
60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
2. 4
1. 3
2. 9
1. 9
0. 95
0. 95
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
unless otherwise specified)
Test
conditions
MIN
60
50
0.1
0.1
0.1
130
400
0.25
1
V
V
TYP
MAX
UNIT
V
V
Ic= 100
µ
A, I
E
=0
Ic = 0.1mA, I
B
=0
V
CB
=60V, I
E
=0
V
CE
=50V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V, I
C
= 2mA
I
C
=100 mA, I
B
= 10mA
I
C
=100 mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA
0. 4
µ
A
µ
A
µ
A
Transition frequency
f
T
f=
30MHz
80
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
L
130-200
H
200- 400
DEVICE MARKING
C1815LT1=HF
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