C1815
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
200 mW, 150 mA, 60 V
NPN Plastic Encapsulated Transistor
SOT-23
A
FEATURE
Power Dissipation
1
L
3
3
Top View
2
C B
1
2
MARKING: HF
1
Base
Collector
K
E
D
3
F
G
H
J
2
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.04
2.10
2.80
1.20
1.60
0.89
1.40
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
-
0.18
0.40
0.60
0.08
0.20
0.6 REF.
0.85
1.15
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
RATING
60
50
5
150
200
150, -55 ~ 150
UNIT
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
SYMBOL
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
MIN
60
50
-
-
130
-
-
80
TYP
-
-
-
-
-
-
-
-
MAX
-
-
0.1
0.1
0.1
400
0.25
1
-
UNIT
V
V
µA
µA
µA
V
V
MHz
TEST CONDITION
I
C
=100µA, I
E
= 0A
I
C
=0.1mA, I
B
= 0A
V
CB
=60 V, I
E
= 0 A
V
CE
=50 V, I
B
= 0 A
V
EB
=5 V, I
C
= 0 A
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
= 10V, I
C
= 1 mA, f = 30 MHz
CLASSIFICATION OF h
FE
Rank
Range
L
130-200
H
200-400
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2009 Rev. A
Page 1 of 2
C1815
Elektronische Bauelemente
200 mW, 150 mA, 60 V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2009 Rev. A
Page 2 of 2
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
