CTLM1034-M832D
MULTI DISCRETE MODULE
™
SURFACE MOUNT SILICON
LOW VCE(SAT) NPN TRANSISTOR
AND
LOW VF SCHOTTKY RECTIFIER
w w w. c e n t r a l s e m i . c o m
TLM832D CASE
MARKING CODE: CFC
APPLICATIONS
•
Switching Circuits
•
DC / DC Converters
•
LCD Backlighting
•
Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
MAXIMUM RATINGS - CASE:
(TA=25°C)
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
MAXIMUM RATINGS - D1:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp<1.0ms
Peak Forward Surge Current, tp=8.0ms
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM1034-832D
consists of a Low VCE(SAT) NPN Transistor and Low
VF Schottky Rectifier. Packaged in a small, thermally
efficient, leadless 3x2mm surface mount case, it is
designed for applications where small size, operational
efficiency, and low energy consumption are the prime
requirements. Due to its leadless package design this
device is capable of dissipating up to 4 times the power
of similar devices in comparable sized surface mount
packages.
FEATURES
•
Dual Chip Device
•
High Current (1.0A) Transistor and Schottky Rectifier
•
Low VCE(SAT) NPN Transistor (450mV @ IC=1.0A MAX)
•
Low VF Schottky Rectifier (550mV @ 1.0A MAX)
•
High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
•
Small TLM 3x2mm Leadless Surface Mount Package
•
Complementary Device: CTLM1074-M832D
SYMBOL
PD
TJ, Tstg
Θ
JA
VCBO
VCEO
VEBO
IC
VRRM
IF
IFRM
IFSM
UNITS
W
°C
°C/W
V
V
V
A
V
A
A
A
MAX
100
100
UNITS
nA
nA
V
V
V
mV
mV
1.65
-65 to +150
76
40
25
6.0
1.0
40
1.0
3.5
10
ELECTRICAL CHARACTERISTICS - Q1:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
20
VCE(SAT)
IC=100mA, IB=10mA
35
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm
2
.
50
75
R2 (19-February 2010)
CTLM1034-M832D
MULTI DISCRETE MODULE
™
SURFACE MOUNT SILICON
LOW VCE(SAT) NPN TRANSISTOR
AND
LOW VF SCHOTTKY RECTIFIER
ELECTRICAL CHARACTERISTICS - Q1- Continued:
(TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
VCE(SAT)
IC=200mA, IB=20mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=800mA, IB=80mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
ELECTRICAL CHARACTERISTICS - D1:
(TA=25°C)
SYMBOL
TEST CONDITIONS
IR
VR=5.0V
IR
VR=8.0V
IR
VR=15V
BVR
IR=100μA
VF
IF=10mA
VF
IF=100mA
VF
IF=500mA
VF
IF=1.0A
CJ
VR=4.0V, f=1.0MHz
MIN
TYP
75
130
200
250
MAX
150
250
400
450
1.1
0.9
300
UNITS
mV
mV
mV
mV
V
V
10
MHz
pF
TYP
MAX
10
20
50
0.29
0.36
0.45
0.55
40
50
UNITS
μA
μA
μA
V
V
V
V
V
pF
TLM832D CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
For Maximum Power Dissipation
(Dimensions in mm)
For standard mounting refer
to TLM832D Package Details
LEAD CODE:
1) Base Q1
2) Emitter Q1
3) Anode D1
4) Anode D1
5)
6)
7)
8)
Cathode D1
Cathode D1
Collector Q1
Collector Q1
MARKING CODE: CFC
* Note:
- Exposed pad P1 common to pins 7 and 8
- Exposed pad P2 common to pins 5 and 6
R2 (19-February 2010)
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