Datasheet> 器件分类 > 分立半导体> 晶体管> CMPTA29LEADFREE

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CMPTA29LEADFREE: 产品描述Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小322KB，共2页; 制造商Central Semiconductor; 标准

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CMPTA29LEADFREE概述

Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMPTA29LEADFREE规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	100 V
配置	DARLINGTON
最小直流电流增益 (hFE)	10000
JESD-30 代码	R-PDSO-G3
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN (315)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	10
晶体管元件材料	SILICON
标称过渡频率 (fT)	125 MHz
Base Number Matches	1

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CMPTA29

SURFACE MOUNT

HIGH VOLTAGE

NPN SILICON

DARLINGTON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA29 is an

NPN silicon darlington transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for applications requiring

extremely high voltage and high gain.

MARKING CODE: C29

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCES

VEBO

TJ, Tstg

100

500

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C) unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICES

ICBO

IEBO

BVCES

BVCBO

BVEBO

VCE(SAT)

VBE(ON)

hFE

Cob

VCE=80V

VCB=80V

VBE=10V

IC=100µA

IE=10µA

IC=10mA, IB=10µA

IC=100mA, IB=100µA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

10,000

125

100

MAX

500

100

UNITS

1.2

1.5

2.0

MHz

8.0

R4 (3-February 2010)

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