CMJ0130
THRU
CMJH180
SURFACE MOUNT SILICON
CURRENT LIMITING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMJ0130
series types are silicon field effect current regulator
diodes designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the epoxy molded, low profile
SOD-123FL case. Special selections of IP (regulator
current) are available for critical applications.
MARKING: SEE MARKING CODES ON ELECTRICAL
CHARACTERISTICS TABLE
SOD-123FL CASE
FEATURES:
• High Reliability
• Special Selections Available
• Superior Lot to Lot Consistency
• Leaded Devices Available
SYMBOL
POV
POV
PD
TJ, Tstg
Θ
JA
100
50
500
-65 to +150
250
UNITS
V
V
mW
°C
°C/W
MAXIMUM RATINGS:
(TA=25°C)
Peak Operating Voltage (CMJ0130 THRU CMJ5750)
Peak Operating Voltage (CMJH080 THRU CMJH180)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
Regulator
Current
(Note 1)
Type
IP @ VT=25V
ZT @ VT=25V
ZK @ VK=6.0V VL @ IL=0.8 x IP MIN
TC
Minimum
Dynamic
Impedance
Minimum
Knee
Impedance
Maximum
Limiting
Voltage
Temperature
Coefficient
(Note 2)
Marking
Code
MIN
mA
CMJ0130
CMJ0300
CMJ0500
CMJ0750
CMJ1000
CMJ1500
CMJ2000
CMJ2700
CMJ3500
CMJ4500
CMJ5750
CMJH080
CMJH100
CMJH120
CMJH150
0.05
0.20
0.40
0.60
0.88
1.28
1.68
2.28
3.0
3.9
5.0
6.56
8.0
9.6
12
NOM
mA
0.13
0.31
0.515
0.76
1.1
1.5
2.0
2.69
3.55
4.5
5.75
8.2
10
12
15
MAX
mA
0.21
0.42
0.63
0.92
1.32
1.72
2.32
3.1
4.1
5.1
6.5
9.84
12
14.4
18
MΩ
6.0
4.0
2.0
1.0
0.65
0.45
0.35
0.30
0.25
0.20
0.05
0.32
0.17
0.08
0.03
kΩ
2,000
1,000
500
200
100
70
50
30
20
10
5.0
15
6.0
3.0
2.0
V
0.6
0.8
1.1
1.4
1.7
2.0
2.3
2.7
3.2
3.7
4.5
3.1
3.5
3.8
4.3
4.6
%/°C
+2.10 to +0.10
+0.40 to -0.20
+0.15 to -0.25
0.0 to -0.32
-0.10 to -0.37
-0.13 to -0.40
-0.15 to -0.42
-0.18 to -0.45
-0.20 to -0.47
-0.22 to -0.50
-0.25 to -0.53
-0.25 to -0.45
-0.25 to -0.45
-0.25 to -0.45
-0.25 to -0.45
-0.25 to -0.45
101
301
501
701
102
152
202
272
352
452
562
822
103
123
153
183
CMJH180
16
18
20
0.02
1.8
Notes: 1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
2) The Temperature Coefficient is measured between + 25°C and +50°C.
R2 (5-October 2010)
CMJ0130
THRU
CMJH180
SURFACE MOUNT SILICON
CURRENT LIMITING DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
Regulator Current vs Voltage
R2 (5-October 2010)
w w w. c e n t r a l s e m i . c o m
消费电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
