CHV2240
Multifunction : K-band VCO and Q-band Multiplier
GaAs Monolithic Microwave IC
Description
The CHV2240 is a monolithic multifunction
proposed for frequency generation at
38GHz. It integrates a K-band Voltage
Controlled Oscillator, a Q-band frequency
multiplier and buffer amplifiers. For
performance optimisation, an external port
(ERC) allows a passive resonator coupling
to the oscillator (at half output frequency).
This chip has been especially designed to
be coupled to a high Q dielectric resonator.
All the active devices are internally self
biased.
The circuit is manufactured with the P-
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is available in chip form.
+V
F_out/2
HIGH Q
RESONATOR
-V
ERC
RF_out
x2
(F_out)
V_tune
Multifunction block diagram
38,204
38,202
Output frequency (GHz)
T=-40°C
38,2
38,198
38,196
38,194
38,192
38,19
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
Main Features
n
K-band VCO + Q-band frequency
multiplier
n
External resonator for centre frequency
control and phase noise optimisation
n
High quality oscillator when coupled to
a dielectric resonator
n
On-chip varactor for electronic control
n
Chip size 2.68x1.4 x 0.1 mm
T=+25°C
T=+100°C
Vtune (V)
Typical tuning characteristic
Main Characteristics
Tamb = +25°C
Symbol
F_out
F_t
Pn
Pout
Parameter
Min
37.5
Typ
38.25
5
-100
9
Max
39
Unit
GHz
MHz
dBc/Hz
dBm
Output frequency
Frequency tuning range (high Q resonator)
Oscillator phase noise @ 100kHz (38GHz)
Output power
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. :DSCHV22400096 -05-Apr-00
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Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2240
Electrical Characteristics
K-band VCO / Q-band Multiplier
Full temperature range, used according to section “Typical assembly and bias configuration”
Symbol
F_out
F_osc
F_stab
Pn
P_out
F_t
Vt
I_vt
VSWR_out
+V
+I
-V
-I
Top
Parameter
Output frequency
Oscillator frequency (1)
Frequency stability (1) , (2)
Phase noise @ 100kHz @ 38GHz (2)
Output power
Frequency tuning range (2)
Voltage tuning range
Tuning current
VSWR at output port
Positive supply voltage
Positive supply current
Negative supply voltage
Negative supply current
Operating temperature range
Min
37.5
Typ
38.25
F_out/2
4
-100
9
5
Max
39
Unit
GHz
ppm/°C
dBc/Hz
dBm
MHz
V
mA
V
mA
V
mA
°C
6
0-2
0.5
4.4
-4.6
-40
2:1
4.5
120
-4.5
3
4.6
180
-4.4
10
+100
(1) The centre frequency is given by the external passive resonator
(2) This characteristic is obtained by using an external dielectric resonator (see section
“Proposed External High Q resonator”)
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
P_erc
+V
-V
+I
-I
Top
Tstg
(1)
(2)
Parameter
RF input power on ERC port (2)
Positive supply voltage
Negative supply voltage
Positive supply current
Negative supply current
Operating temperature range
Storage temperature range
Values
13
5
-5
200
10
-40 to +100
-55 to +155
Unit
dBm
V
V
mA
mA
°C
°C
Operation of this device above anyone of these parameters may cause permanent damage.
Duration < 1s
Ref. :DSCHV22400096 -05-Apr-00
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band VCO / Q-band Multiplier
Chip Mechanical Data and Pin References
CHV2240
4
5
6
7
8
9
10
11 12
13 14
3
2
1
16
15
17
Unit = µm
External chip size (layout size + dicing streets) = 2680 x 1400
Chip thickness = 100 +/- 10
HF Pads (2, 16) = 68 x 118
DC/IF Pads = 100 x 100
♦
Pin
number
1,3,15,17
2
4
5,13
6,7,8
9,10,11,12
14
16
ERC
Vt
-V
+V
GND
RF_out
Pin name
Description
Ground : should not be bonded. If required,
please ask for more information.
External Resonator Coupling Port
Tuning voltage
NC
Negative supply voltage (connected together)
Positive supply voltage (connected together)
Ground (optional)
RF output
Ref. :DSCHV22400096 -05-Apr-00
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Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHV2240
K-band VCO / Q-band Multiplier
Typical Assembly and Bias Configuration
DC/IF lines
Vt
-V
+V
>= 120pF
>= 120pF
4
5
6
7
8
9
10
11 12 13 14
µ-strip line
3
2
16
15
µ-strip line
L_erc
1
17
L_out
This drawing shows an example of assembly and bias configuration. All
the transistors are internally self biased.
For the RF pads the equivalent wire bonding inductance
(diameter=25µm) have to be according to the following recommendation.
Port
ERC (2)
RF_out (16)
Equivalent inductance
(nH)
L_erc = 0.4
L_out = 0.4
Approximated wire
length (mm)
0.5
0.5
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
Ref. :DSCHV22400096 -05-Apr-00
4/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
K-band VCO / Q-band Multiplier
Proposed external high Q resonator
CHV2240
This chip has been especially designed to be coupled to a high Q
dielectric resonator. The resonance is given by a dielectric cylinder coupled to a
50Ω line. The size of the resonator gives the centre frequency and the space
between the resonator and the line gives the loaded quality factor. The following
drawing shows an example of external configuration.
Alumina substrate : thickness=250µm
Dielectric
resonator
50 Ohm resistance
d
2xl
3xl
4
5
6
7
8
9
10
11
12
13
14
3
2
16
15
1
17
via hole
Additional information
n
Resonator reference
example = MURATA /DRD036EC016. As the
exact frequency is given by the resonator size but also by the
environment (cavity size, substrate characteristics, parasitic couplings
…), the final dimensions of the resonator have to be defined
according to the definitive module design. Other kind of resonators
can be used (from TEKELEC or TRANS-TECH). The temperature
coefficient has to be chosen according to the environment.
n
Resonator coupling
: d=0.2 to 0.3mm , l=1.5mm (quarter wave).
These values have been used in the test fixture, of course they can
be modified if the environment is different. The distance between the
resonator and the edge of the substrate (close to MMIC) is proposed
to be 3xl=4.5mm (3 quarter waves), theoretically only one is
necessary but in this case the distance between resonator and MMIC
is too low for automatic assembly.
n
50Ω line width
on alumina (heigth=0.25mm) = 0.238mm
Ω
n
50Ω load
on alumina : this load has to be as good as possible (low
Ω
parasitic inductance).
n
Cavity size
(mm) : 18 x 17 x 7
Ref. :DSCHV22400096 -05-Apr-00
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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