MITSUBISHI HVIGBT MODULES
Prepared by
Approved by
th
S. Iura
Revision: 1.0
H. Yamaguchi : Jun. 2009
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1000HC-66R
N/A
●
I
C
………………………
●
V
CES
……………………
●
1-element in a Pack
●
Insulated Type
1000 A
3300 V
●
LPT-IGBT / Soft Recovery Diode
●
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1061
1 of 9
MITSUBISHI HVIGBT MODULES
CM1000HC-66R
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
th
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
V
iso
V
e
T
j
T
op
T
stg
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Conditions
V
GE
= 0V, T
j
=
−40…+150°C
V
GE
= 0V, T
j
=
−50°C
V
CE
= 0V, T
j
= 25°C
DC, T
c
= 95°C
Pulse
DC
Pulse
(Note 3)
(Note 1)
(Note 1)
Ratings
3300
3200
± 20
1000
2000
1000
2000
10400
6000
2600
−50
~ +150
−50
~ +150
−55
~ +150
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
Emitter current
Maximum power dissipation
Isolation voltage
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
PD
≤
10 pC
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
V
CC
=2500V, V
CE
≤
V
CES
, V
GE
=15V, T
j
=150°C
10
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
T
j
= 25°C
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
g
V
CE(sat)
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
V
CE
= V
CES
, V
GE
= 0V
T
j
= 125°C
T
j
= 150°C
V
CE
= 10 V, I
C
= 100 mA, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz
T
j
= 25°C
V
CC
= 1800 V, I
C
= 1000 A, V
GE
= ±15 V
I
C
= 1000 A
V
GE
= 15 V
(Note 4)
Limits
Min
—
—
—
5.7
−0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
Typ
—
4.0
24.0
6.2
—
140.0
8.7
4.0
10.7
2.45
3.10
3.25
1.00
0.95
0.95
0.28
0.30
0.30
1.65
1.95
2.10
1.80
2.20
2.40
Max
4.0
—
—
6.7
0.5
—
—
—
—
—
3.70
—
—
1.25
1.25
—
0.50
0.50
—
—
—
—
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
t
d(on)
Turn-on delay time
V
CC
= 1800 V
µs
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
t
r
Turn-on rise time
I
C
= 1000 A
V
GE
= ±15 V
R
G(on)
= 2.4
Ω
µs
E
on(10%)
Turn-on switching energy
(Note 5)
L
s
= 150 nH
Inductive load
J/P
E
on
Turn-on switching energy
(Note 6)
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1061
2 of 9
MITSUBISHI HVIGBT MODULES
CM1000HC-66R
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
th
HIGH POWER SWITCHING USE
INSULATED TYPE
Symbol
Item
Conditions
T
j
= 25°C
Limits
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
2.70
2.80
2.85
0.30
0.35
0.40
1.35
1.65
1.70
1.50
1.80
1.90
2.15
2.30
2.25
0.50
0.70
0.80
850
1000
1050
700
1150
1350
0.70
1.20
1.35
0.80
1.35
1.55
Max
—
3.30
3.30
—
1.00
1.00
—
—
—
—
—
—
—
2.80
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
t
d(off)
Turn-off delay time
T
j
= 125°C
T
j
= 150°C
V
CC
= 1800 V
I
C
= 1000 A
V
GE
= ±15 V
R
G(off)
= 8.4
Ω
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
µs
t
f
Turn-off fall time
µs
E
off(10%)
Turn-off switching energy
(Note 5)
L
s
= 150 nH
Inductive load
J/P
E
off
Turn-off switching energy
(Note 6)
T
j
= 125°C
T
j
= 150°C
J/P
V
EC
Emitter-collector voltage
(Note 2)
I
E
= 1000 A
V
GE
= 0 V
(Note 4)
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
V
t
rr
Reverse recovery time
(Note 2)
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
µs
I
rr
Reverse recovery current
(Note 2)
T
j
= 125°C
V
CC
= 1800 V
I
C
= 1000 A
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
A
Q
rr
Reverse recovery charge
(Note 2)
V
GE
= ±15 V
R
G(on)
= 2.4
Ω
L
s
= 150 nH
Inductive load
µC
E
rec(10%)
Reverse recovery energy
(Note 2)
(Note 5)
J/P
E
rec
Reverse recovery energy
(Note 2)
(Note 6)
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1061
3 of 9
MITSUBISHI HVIGBT MODULES
CM1000HC-66R
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
th
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Item
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
λ
grease
= 1W/m·K, D
(c-f)
= 100 µm
Limits
Min
—
—
—
Typ
—
—
9.0
Max
12.0
22.5
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
r
g
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
Item
Conditions
M8: Main terminals screw
Limits
Min
7.0
3.0
1.0
—
600
19.5
32.0
Typ
—
—
—
0.8
—
—
—
16.5
0.18
2.25
Max
22.0
6.0
3.0
—
—
—
—
—
—
—
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Ω
Mounting torque
M6: Mounting screw
M4: Auxiliary terminals screw
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistor
Collector to Emitter
T
c
= 25°C, Collector to Emitter
T
c
= 25°C
—
—
—
Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (150°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
0.1V
CE
x 0.1I
C
x dt.
The integration range of E
on
/ E
off
/ E
rec
according to IEC 60747.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1061
4 of 9
MITSUBISHI HVIGBT MODULES
CM1000HC-66R
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
th
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
Tj = 150°C
TRANSFER CHARACTERISTICS
(TYPICAL)
2000
V
CE
= V
GE
1600
V
GE
= 19V
V
GE
= 15V
V
GE
= 11V
1600
Collector Current [A]
1200
Collector Current [A]
V
GE
= 13V
1200
800
V
GE
= 9V
800
Tj = 150°C
Tj = 25°C
400
400
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
Collector - Emitter Voltage [V]
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2000
V
GE
= 15V
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2000
1600
1600
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 150°C
Collector Current [A]
1200
Emitter Current [A]
Tj = 125°C
1200
Tj = 150°C
800
800
400
400
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
Emitter-Collector Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HVM-1061
5 of 9
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