CY14B104K, CY14B104M
4 Mbit (512K x 8/256K x 16) nvSRAM with
Real Time Clock
Features
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
Watchdog Timer
Clock Alarm with Programmable Interrupts
Capacitor or Battery Backup for RTC
Industrial Temperature
44 and 54-Pin TSOP II Package
Pb-free and RoHS Compliance
25 ns and 45 ns Access Times
Internally Organized as 512K x 8 (CY14B104K) or 256K x 16
(CY14B104M)
Hands Off Automatic STORE on Power Down with only a Small
Capacitor
STORE to QuantumTrap Nonvolatile Elements is Initiated by
Software, Device Pin, or AutoStore on Power Down
RECALL to SRAM is Initiated by Software or Power Up
High Reliability
Infinite Read, Write, and RECALL Cycles
200,000 STORE Cycles to QuantumTrap
20 year Data Retention
Single 3V +20%, –10% Operation
Data Integrity of Cypress nvSRAM combined with Full Featured
Real Time Clock (RTC)
Functional Description
The Cypress CY14B104K and CY14B104M combines a 4 Mbit
nonvolatile static RAM with a full featured RTC in a monolithic
integrated circuit. The embedded nonvolatile elements incor-
porate QuantumTrap technology producing the world’s most
reliable nonvolatile memory. The SRAM is read and written
infinite number of times, while independent nonvolatile data
resides in the nonvolatile elements.
The RTC function provides an accurate clock with leap year
tracking and a programmable, high accuracy oscillator. The
alarm function is programmable for periodic minutes, hours,
days, or months alarms. There is also a programmable watchdog
timer for process control.
Quatrum
Trap
2048 X 2048
V
CC
V
CA
P
Logic Block Diagram
[1, 2, 3]
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
17
A
18
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
DQ
9
DQ
10
DQ
11
DQ
12
DQ
13
DQ
14
DQ
15
I
N
P
U
T
B
U
F
F
E
R
S
R
O
W
D
E
C
O
D
E
R
STATIC RAM
ARRAY
2048 X 2048
STORE
RECALL
POWER
CONTROL
V
RTCbat
V
RTCcap
STORE/RECALL
CONTROL
SOFTWARE
DETECT
HSB
A
14
- A
2
RTC
X
out
X
in
INT
COLUMN I/O
MUX
A
18
- A
0
OE
WE
COLUMN DEC
CE
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BLE
BHE
Notes
1. Address A
0
- A
18
for x8 configuration and Address A
0
- A
17
for x16 configuration.
2. Data DQ
0
- DQ
7
for x8 configuration and Data DQ
0
- DQ
15
for x16 configuration.
3. BHE and BLE are applicable for x16 configuration only.
Cypress Semiconductor Corporation
Document #: 001-07103 Rev. *N
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 01, 2009
[+] Feedback
CY14B104K, CY14B104M
Pinouts
Figure 1. Pin Diagram - 44-PIn and 54-Pin TSOP II
INT
[5]
NC
A
0
A
1
A
2
A
3
A
4
CE
DQ
0
DQ
1
V
CC
V
SS
DQ
2
DQ
3
WE
A
5
A
6
A
7
A
8
A
9
X
out
X
in
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
HSB
NC
[4]
NC
A
18
A
17
A
16
A
15
OE
DQ
7
DQ
6
V
SS
V
CC
DQ5
DQ4
V
CAP
A
14
A
13
A
12
A
11
A
10
V
RTCcap
V
RTCbat
INT
[5]
NC
A
0
A
1
A
2
A
3
A
4
CE
DQ
0
DQ
1
DQ
2
DQ
3
V
CC
V
SS
DQ
4
DQ
5
DQ
6
DQ
7
WE
A
5
A
6
A
7
A
8
A
9
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
HSB
[4]
NC
A
17
A
16
A
15
OE
BHE
BLE
DQ
15
DQ
14
DQ
13
DQ
12
V
SS
V
CC
DQ
11
DQ
10
DQ
9
DQ
8
V
CAP
A
14
A
13
A
12
A
11
A
10
NC
44 - TSOP II
(x8)
54 - TSOP II
(x16)
Top View
(not to scale)
Top View
(not to scale)
X
out
X
in
V
RTCcap
V
RTCbat
Table 1. Pin Definitions
Pin Name
A
0
– A
18
A
0
– A
17
DQ
0
– DQ
7
DQ
0
– DQ
15
I/O Type
Input
Description
Address Inputs Used to Select One of the 524,288 bytes of the nvSRAM for x8 Configuration.
Address Inputs Used to Select One of the 262,144 words of the nvSRAM for x16 Configuration.
Input/Output
Bidirectional Data I/O Lines for x8 Configuration.
Used as input or output lines depending on
operation.
Bidirectional Data I/O Lines for x16 Configuration.
Used as input or output lines depending on
operation.
No Connect
No Connects.
This pin is not connected to the die.
Input
Input
Input
Input
Input
Output
Input
Write Enable Input, Active LOW.
When selected LOW, data on the I/O pins is written to the specific
address location.
Chip Enable Input, Active LOW.
When LOW, selects the chip. When HIGH, deselects the chip.
Output Enable, Active LOW.
The active LOW OE input enables the data output buffers during read
cycles. Deasserting OE HIGH causes the I/O pins to tristate.
Byte High Enable, Active LOW.
Controls DQ
15
- DQ
8
.
Byte Low Enable, Active LOW.
Controls DQ
7
- DQ
0
.
Crystal Connection.
Drives crystal on startup.
Crystal Connection.
For 32.768 kHz crystal.
NC
WE
CE
OE
BHE
BLE
X
out
X
in
V
RTCcap
V
RTCbat
Power Supply
Capacitor Supplied Backup RTC Supply Voltage.
Left unconnected if V
RTCbat
is used.
Power Supply
Battery Supplied Backup RTC Supply Voltage.
Left unconnected if V
RTCcap
is used.
Notes
4. Address expansion for 8 Mbit. NC pin not connected to die.
5. Address expansion for 16 Mbit. NC pin not connected to die.
Document #: 001-07103 Rev. *N
Page 2 of 32
[+] Feedback
CY14B104K, CY14B104M
Table 1. Pin Definitions
(continued)
Pin Name
INT
V
SS
V
CC
HSB
I/O Type
Output
Ground
Description
Interrupt Output.
Programmable to respond to the clock alarm, the watchdog timer, and the power
monitor. Also programmable to either active HIGH (push or pull) or LOW (open drain).
Ground for the Device.
Must be connected to ground of the system.
Power Supply
Power Supply Inputs to the Device.
3.0V +20%, –10%
Input/Output
Hardware STORE Busy (HSB).
When LOW this output indicates that a Hardware STORE is in progress.
When pulled LOW external to the chip it initiates a nonvolatile STORE operation. A weak internal pull
up resistor keeps this pin HIGH if not connected (connection optional). After each STORE operation
HSB is driven HIGH for short time with standard output high current.
Power Supply
AutoStore Capacitor.
Supplies power to the nvSRAM during power loss to store data from SRAM to
nonvolatile elements.
V
CAP
Device Operation
The CY14B104K/CY14B104M nvSRAM is made up of two
functional components paired in the same physical cell. These
are a SRAM memory cell and a nonvolatile QuantumTrap cell.
The SRAM memory cell operates as a standard fast static RAM.
Data in the SRAM is transferred to the nonvolatile cell (the
STORE operation), or from the nonvolatile cell to the SRAM (the
RECALL operation). Using this unique architecture, all cells are
stored and recalled in parallel. During the STORE and RECALL
operations SRAM read and write operations are inhibited. The
CY14B104K/CY14B104M supports infinite reads and writes
similar to a typical SRAM. In addition, it provides infinite RECALL
operations from the nonvolatile cells and up to 200K STORE
operations. See the
Truth Table For SRAM Operations
on page
24 for a complete description of read and write modes.
AutoStore Operation
The CY14B104K/CY14B104M stores data to the nvSRAM using
one of three storage operations. These three operations are:
Hardware STORE, activated by the HSB; Software STORE,
activated by an address sequence; AutoStore, on device power
down. The AutoStore operation is a unique feature of
QuantumTrap technology and is enabled by default on the
CY14B104K/CY14B104M.
During normal operation, the device draws current from V
CC
to
charge a capacitor connected to the V
CAP
pin. This stored
charge is used by the chip to perform a single STORE operation.
If the voltage on the V
CC
pin drops below V
SWITCH
, the part
automatically disconnects the V
CAP
pin from V
CC
. A STORE
operation is initiated with power provided by the V
CAP
capacitor.
Note
If the capacitor is not connected to V
CAP
pin, AutoStore
must be disabled using the soft sequence specified in
Preventing
AutoStore
on page 5. In case AutoStore is enabled without a
capacitor on V
CAP
pin, the device attempts an AutoStore
operation without sufficient charge to complete the Store. This
may corrupt the data stored in nvSRAM.
Figure 2. AutoStore Mode
V
CC
SRAM Read
The CY14B104K/CY14B104M performs a read cycle whenever
CE and OE are LOW, and WE and HSB are HIGH. The address
specified on pins A
0-18
or A
0-17
determines which of the 524,288
data bytes or 262,144 words of 16 bits each are accessed. Byte
Enables (BHE, BLE) determine which bytes are enabled to the
output, in the case of 16-bit words. When the read is initiated by
an address transition, the outputs are valid after a delay of t
AA
(read cycle 1). If the read is initiated by CE or OE, the outputs
are valid at t
ACE
or at t
DOE
, whichever is later (read cycle 2). The
data output repeatedly responds to address changes within the
t
AA
access time without the need for transitions on any control
input pins. This remains valid until another address change or
until CE or OE is brought HIGH, or WE or HSB is brought LOW.
0.1uF
10kOhm
V
CC
SRAM Write
A write cycle is performed when CE and WE are LOW and HSB
is HIGH. The address inputs must be stable before entering the
write cycle and must remain stable until CE or WE goes HIGH at
the end of the cycle. The data on the common I/O pins DO
0-15
are written into the memory if it is valid t
SD
before the end of a
WE controlled write or before the end of a CE controlled write.
The Byte Enable inputs (BHE, BLE) determine which bytes are
written, in the case of 16-bit words. Keep OE HIGH during the
entire write cycle to avoid data bus contention on common I/O
lines. If OE is left LOW, internal circuitry turns off the output
buffers t
HZWE
after WE goes LOW.
WE
V
CAP
V
CAP
V
SS
Document #: 001-07103 Rev. *N
Page 3 of 32
[+] Feedback
CY14B104K, CY14B104M
Figure 2
shows the proper connection of the storage capacitor
(V
CAP
) for automatic STORE operation. Refer to
DC Electrical
Characteristics
on page 15 for the size of the V
CAP
. The voltage
on the V
CAP
pin is driven to V
CC
by a regulator on the chip. A pull
up should be placed on WE to hold it inactive during power up.
This pull up is only effective if the WE signal is tristate during
power up. Many MPUs tristate their controls on power up. Verify
this when using the pull up. When the nvSRAM comes out of
power-on-recall, the MPU must be active or the WE held inactive
until the MPU comes out of reset.
To reduce unnecessary nonvolatile STOREs, AutoStore, and
Hardware STORE operations are ignored unless at least one
write operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a write operation has taken place. The
HSB signal is monitored by the system to detect if an AutoStore
cycle is in progress.
Software STORE
Data is transferred from the SRAM to the nonvolatile memory by
a software address sequence. The CY14B104K/CY14B104M
Software STORE cycle is initiated by executing sequential CE or
OE controlled read cycles from six specific address locations in
exact order. During the STORE cycle, an erase of the previous
nonvolatile data is first performed, followed by a program of the
nonvolatile elements. After a STORE cycle is initiated, further
input and output are disabled until the cycle is completed.
Because a sequence of reads from specific addresses is used
for STORE initiation, it is important that no other read or write
accesses intervene in the sequence, or the sequence is aborted
and no STORE or RECALL takes place. To initiate the Software
STORE cycle, the following read sequence must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8FC0 Initiate STORE cycle
The software sequence may be clocked with CE controlled reads
or OE controlled reads, with WE kept HIGH for all the six READ
sequences. After the sixth address in the sequence is entered,
the STORE cycle commences and the chip is disabled. HSB is
driven LOW. After the t
STORE
cycle time is fulfilled, the SRAM is
activated again for the read and write operation.
Hardware STORE (HSB) Operation
The CY14B104K/CY14B104M provides the HSB pin to control
and acknowledge the STORE operations. The HSB pin is used
to request a Hardware STORE cycle. When the HSB pin is driven
LOW, the CY14B104K/CY14B104M conditionally initiates a
STORE operation after t
DELAY
. An actual STORE cycle begins
only if a write to the SRAM has taken place since the last STORE
or RECALL cycle. The HSB pin also acts as an open drain driver
that is internally driven LOW to indicate a busy condition when
the STORE (initiated by any means) is in progress.
SRAM write operations that are in progress when HSB is driven
LOW by any means are given time (t
DELAY
) to complete before
the STORE operation is initiated. However, any SRAM write
cycles requested after HSB goes LOW are inhibited until HSB
returns HIGH. In case the write latch is not set, HSB is not driven
LOW by the CY14B104K/CY14B104M. But any SRAM read and
write cycles are inhibited until HSB is returned HIGH by MPU or
other external source.
During any STORE operation, regardless of how it is initiated,
the CY14B104K/CY14B104M continues to drive the HSB pin
LOW, releasing it only when the STORE is complete. Upon
completion
of
the
STORE
operation,
the
CY14B104K/CY14B104M remains disabled until the HSB pin
returns HIGH. Leave the HSB unconnected if it is not used.
Software RECALL
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A software RECALL cycle is
initiated with a sequence of read operations in a manner similar
to the Software STORE initiation. To initiate the RECALL cycle,
perform the following sequence of CE or OE controlled read
operations:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4C63 Initiate RECALL cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared; then, the nonvolatile information is transferred into the
SRAM cells. After the t
RECALL
cycle time, the SRAM is again
ready for read and write operations. The RECALL operation
does not alter the data in the nonvolatile elements.
Hardware RECALL (Power Up)
During power up or after any low power condition
(V
CC
< V
SWITCH
), an internal RECALL request is latched. When
V
CC
again exceeds the V
SWITCH
on powerup, a RECALL cycle
is automatically initiated and takes t
HRECALL
to complete. During
this time, the HSB pin is driven LOW by the HSB driver and all
reads and writes to nvSRAM are inhibited.
Document #: 001-07103 Rev. *N
Page 4 of 32
[+] Feedback
CY14B104K, CY14B104M
Table 2. Mode Selection
CE
H
L
L
L
WE
X
H
L
H
OE, BHE, BLE
[3]
X
L
X
L
A
15
- A
0
[6]
X
X
X
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4B46
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Mode
Not Selected
Read SRAM
Write SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Disable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Enable
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
STORE
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
RECALL
I/O
Output High Z
Output Data
Input Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Power
Standby
Active
Active
Active
[7]
L
H
L
Active
[7]
L
H
L
Active I
CC2[7]
L
H
L
Active
[7]
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the Software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
or OE controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE or OE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) issued to save the
AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
Notes
6. While there are 19 address lines on the CY14B104K (18 address lines on the CY14B104M), only 13 address lines (A
14
- A
2
) are used to control software modes.
The remaining address lines are don’t care.
7. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
Document #: 001-07103 Rev. *N
Page 5 of 32
[+] Feedback
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
