PRELIMINARY
CY62135V MoBL™
CY62135V18 MoBL2™
128K x 16 Flash Compatible Static RAM
Features
• Low voltage range:
— CY62135V: 2.7V–3.3V
— CY62135V18: 1.65–1.95V
• Ultra-low active/standby power
• Easy memory expansion with CE /CE2 and OE features
• Automatic power-down when deselected
• Pin out compatible with standard Flash devices
• Shipped in Wafer/Die form
BHE are HIGH
[1]
. The input/output pins (I/O
0
through I/O
15
)
are placed in a high-impedance state when: deselected (CE
HIGH or CE2 LOW), outputs are disabled (OE HIGH), BHE
and BLE are disabled (BHE, BLE HIGH), or during a write
operation (CE LOW, CE2 HIGH and WE LOW).
Writing to the device is accomplished by taking chip enable
(CE) LOW, CE2 HIGH, and write enable (WE) inputs LOW. If
byte low enable (BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is written into the location specified on the ad-
dress pins (A
0
through A
16
). If byte high enable (BHE) is LOW,
then data from I/O pins (I/O
8
through I/O
15
) is written into the
location specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking chip en-
able (CE) LOW, CE2 HIGH, and output enable (OE) LOW
while forcing the write enable (WE) HIGH. If byte low enable
(BLE) is LOW, then data from the memory location specified
by the address pins will appear on I/O
0
to I/O
7
. If byte high
enable (BHE) is LOW, then data from memory will appear on
I/O
8
to I/O
15
. See the Truth Table at the back of this data sheet
for a complete description of read and write modes.
The CY62135V/CY62135V18 are shipped in a wafer form.
Functional Description
The CY62135V and CY62135V18 are high-performance
CMOS static RAMs organized as 128K words by 16 bits. This
device features advanced circuit design to provide ultra-low
active current. This is ideal for providing More Battery Life™
(MoBL™) in portable applications such as cellular telephones.
The device also has an automatic power-down feature that
significantly reduces power consumption by 99% when ad-
dresses are not toggling. The device can also be put into
standby mode when deselected (CE HIGH or CE2 LOW) or
when CE is LOW and when CE2 is HIGH and both BLE and
Logic Block Diagram
DATA IN DRIVERS
A
9
A
8
A
7
A
6
A
3
A
2
A
1
A
0
ROW DECODER
128K x 16
RAM Array
1024 X 2048
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
A
10
A
11
A
12
A
13
A
14
A
15
A
16
BHE
WE
OE
BLE
CE
Power-Down
Circuit
BHE
BLE
CE2
Note:
1. Tying BBDISB to V
CC
will disable the Byte Enable Power Down Feature. Tying it to V
SS
will enable the Byte Enable Power Down Feature.
More Battery Life and MoBL are trademarks of Cypress Semiconductor Corporation.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
December 21, 1999
PRELIMINARY
Wafer and Die Specifications
Mechanical Specifications
Process/Technology
Wafer Diameter
Wafer Thickness, background
Backside Wafer Surface
Bond Pad Specifications
Bond Pad Opening
Topside Passivation
Bond Pad Metal Composition
Bond Pad Locations
CY62135V MoBL™
CY62135V18 MoBL2™
CMOS, Double Metal, 0.25µ
203.2 mm
355.6
µm
Silicon
80µ
TBD
300 A° Al, 0.5% Cu
The next figure shows the locations of the bond pads and table below provides the X and Y coordinates of these bond pads.
A15
A14
A13
A12
A16
V
SSQ
D15
D7
A11
A10
A9
A8
V
CC
CE2
WE
V
SS
A15
BHE
BLE
A17
A7
A6
A5
A4
A3
A2
A1
PTM
D14
D6
D13
D5
D12
D4
BBDISB
V
CCQ
V
CC
D11
D3
D10
D2
D9
D1
D8
D0
OE
V
SS
CE
A0
PAD Locations on Die (Die Size: 3.498 mm x 5.731 mm)
2
PRELIMINARY
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied
.................................................. −55°C
to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
CY62135V MoBL™
CY62135V18 MoBL2™
DC Voltage Applied to Outputs
in High Z State
[2]
................................... –0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
................................ –0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Device
CY62135V
CY62135V18
Industrial
Industrial
Range
Ambient Temperature
–40°C to +85°C
–40°C to +85°C
V
CC
2.7V to 3.3V
1.65V to 1.95V
Shaded areas contain advance information.
Product Portfolio
Power Dissipation (Commercial)
V
CC
Range
Product
CY62135V
CY62135V18
V
CC(min)
2.7V
1.65V
V
CC(typ)
[3]
3.0V
1.8V
V
CC(max)
3.3V
1.95V
Speed
70 ns
70 ns
Operating (I
CC
)
Typ.
7
3
[3]
Standby (I
SB2
)
Typ.
[3]
Maximum
12 mA
7 mA
Maximum
10
µA
15
µA
1
µA
1
µA
Shaded areas contain advance information.
Electrical Characteristics
Over the Operating Range
CY62135V
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
CC
Operating Supply
Current
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
, CMOS
levels
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or
V
IN
< 0.3V, f = f
MAX
CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V
or V
IN
< 0.3V, f = 0
1
V
CC
= 3.3V
Test Conditions
I
OH
= –1.0 mA
I
OL
= 2.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
V
CC
= 3.3V
V
CC
= 2.7V
2.2
–0.5
–1
–1
+1
+1
7
Min.
2.4
0.4
V
CC
+ 0.5V
0.8
+1
+1
12
Typ.
[3]
Max.
Unit
V
V
V
V
µA
µA
mA
I
OUT
= 0 mA, f = 1 MHz, CMOS Levels
I
SB1
Automatic CE
Power-Down Current—
CMOS Inputs
Automatic CE
Power-Down Current—
CMOS Inputs
1
2
100
mA
µA
I
SB2
10
µA
Notes:
2. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
Typ, T
A
= 25°C.
4
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